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ANP-G: A 28-nm 1.04-pJ/SOP Sub-mm2 Asynchronous Hybrid Neural Network Olfactory Processor Enabling Few-Shot Class-Incremental On-Chip Learning
IF 5.4 1区 工程技术
IEEE Journal of Solid-state Circuits Pub Date : 2025-01-29 DOI: 10.1109/jssc.2025.3530513
Dexuan Huo, Jilin Zhang, Xinyu Dai, Jian Zhang, Chunqi Qian, Kea-Tiong Tang, Hong Chen
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引用次数: 0
IEEE Journal of Solid-State Circuits Publication Information
IF 4.6 1区 工程技术
IEEE Journal of Solid-state Circuits Pub Date : 2025-01-29 DOI: 10.1109/JSSC.2025.3528090
{"title":"IEEE Journal of Solid-State Circuits Publication Information","authors":"","doi":"10.1109/JSSC.2025.3528090","DOIUrl":"10.1109/JSSC.2025.3528090","url":null,"abstract":"","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 2","pages":"C2-C2"},"PeriodicalIF":4.6,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10857601","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143056549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal of Solid-State Circuits Publication Information
IF 4.6 1区 工程技术
IEEE Journal of Solid-state Circuits Pub Date : 2025-01-28 DOI: 10.1109/JSSC.2024.3507994
{"title":"IEEE Journal of Solid-State Circuits Publication Information","authors":"","doi":"10.1109/JSSC.2024.3507994","DOIUrl":"10.1109/JSSC.2024.3507994","url":null,"abstract":"","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 1","pages":"C2-C2"},"PeriodicalIF":4.6,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10856420","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143054838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single-X-Ray Sensitive Energy-Binning Dosimeter for Closed-Loop Cancer External-Beam Radiotherapy
IF 4.6 1区 工程技术
IEEE Journal of Solid-state Circuits Pub Date : 2025-01-28 DOI: 10.1109/JSSC.2025.3529848
Rahul Lall;Kyoungtae Lee;Adam Cunha;Rebecca Abergel;Youngho Seo;Ali M. Niknejad;Mekhail Anwar
{"title":"Single-X-Ray Sensitive Energy-Binning Dosimeter for Closed-Loop Cancer External-Beam Radiotherapy","authors":"Rahul Lall;Kyoungtae Lee;Adam Cunha;Rebecca Abergel;Youngho Seo;Ali M. Niknejad;Mekhail Anwar","doi":"10.1109/JSSC.2025.3529848","DOIUrl":"10.1109/JSSC.2025.3529848","url":null,"abstract":"X-ray radiation dose delivered during cancer external-beam radiotherapy (EBRT) is nonlinear with the biological effect imparted to cancer cells and neighboring healthy tissues. This oftentimes leads to insufficient damage to cancer cells and excessive damage to the surrounding healthy tissues, both increasing toxicity and the risk of cancer recurrence later in life for many patients. An understanding of X-ray energy deposition at the single-X-ray level is, therefore, necessary to improve the efficacy of cancer radiotherapy. Here, we present a single-X-ray sensitive, energy-binning integrated circuit (IC)-based dosimeter, fabricated in 180 nm CMOS technology, to enable closed-loop cancer radiotherapy for personalized patient treatment. We use small <inline-formula> <tex-math>$3{times }3~{mu }$ </tex-math></inline-formula>m reverse-biased deep n-well (DNWELL) diodes designed at low capacitive nodes (<inline-formula> <tex-math>${C} {_{mathrm {diode}}}$ </tex-math></inline-formula>), such that the miniscule charge deposition (<inline-formula> <tex-math>${Q} {_{mathrm {dep}}}$ </tex-math></inline-formula>) from single X-rays at these nodes generates a voltage signal large enough to be sensed (<inline-formula> <tex-math>${V} {_{mathrm {diode}}}{=}{Q} {_{mathrm {dep}}}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${C} {_{mathrm {diode}}}$ </tex-math></inline-formula>). In order to enable single-X-ray energy resolution without significant power and area, we implement an analog voltage supply (AVDDH) ~log resistor grid to create a sensitivity gradient across the <inline-formula> <tex-math>$76{times }55$ </tex-math></inline-formula> pixel array. The IC-based dosimeter was tested under scenarios consistent with the treatment of shallow lesions (e.g., skin cancer, superficial tumors, intraoperative radiotherapy). The system is highly linear with radiation dose (10–250 cGy) and accurately tracks dose up to 2 cm deep in tissue for 50-, 70-, and 100-kV X-ray beams.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 4","pages":"1423-1436"},"PeriodicalIF":4.6,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143054837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thank You for Your Authorship
IF 4.6 1区 工程技术
IEEE Journal of Solid-state Circuits Pub Date : 2025-01-28 DOI: 10.1109/JSSC.2025.3528140
{"title":"Thank You for Your Authorship","authors":"","doi":"10.1109/JSSC.2025.3528140","DOIUrl":"10.1109/JSSC.2025.3528140","url":null,"abstract":"","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 1","pages":"364-364"},"PeriodicalIF":4.6,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10856428","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143054840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New Associate Editor
IF 4.6 1区 工程技术
IEEE Journal of Solid-state Circuits Pub Date : 2025-01-28 DOI: 10.1109/JSSC.2024.3494494
Dennis Sylvester
{"title":"New Associate Editor","authors":"Dennis Sylvester","doi":"10.1109/JSSC.2024.3494494","DOIUrl":"10.1109/JSSC.2024.3494494","url":null,"abstract":"","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 1","pages":"4-4"},"PeriodicalIF":4.6,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10856401","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143055123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal of Solid-State Circuits Information for Authors
IF 4.6 1区 工程技术
IEEE Journal of Solid-state Circuits Pub Date : 2025-01-28 DOI: 10.1109/JSSC.2025.3528134
{"title":"IEEE Journal of Solid-State Circuits Information for Authors","authors":"","doi":"10.1109/JSSC.2025.3528134","DOIUrl":"10.1109/JSSC.2025.3528134","url":null,"abstract":"","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 1","pages":"C3-C3"},"PeriodicalIF":4.6,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10856384","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143054833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Guest Editorial Introduction to the Special Section on the 2024 IEEE International Solid-State Circuits Conference (ISSCC)
IF 4.6 1区 工程技术
IEEE Journal of Solid-state Circuits Pub Date : 2025-01-28 DOI: 10.1109/JSSC.2024.3515438
Wei-Zen Chen;Benton H. Calhoun;Chia-Hsiang Yang;Shreyas Sen;Jun Yang
{"title":"Guest Editorial Introduction to the Special Section on the 2024 IEEE International Solid-State Circuits Conference (ISSCC)","authors":"Wei-Zen Chen;Benton H. Calhoun;Chia-Hsiang Yang;Shreyas Sen;Jun Yang","doi":"10.1109/JSSC.2024.3515438","DOIUrl":"10.1109/JSSC.2024.3515438","url":null,"abstract":"","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 1","pages":"5-8"},"PeriodicalIF":4.6,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10856439","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143054839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New Associate Editor
IF 4.6 1区 工程技术
IEEE Journal of Solid-state Circuits Pub Date : 2025-01-28 DOI: 10.1109/JSSC.2024.3503312
Dennis Sylvester
{"title":"New Associate Editor","authors":"Dennis Sylvester","doi":"10.1109/JSSC.2024.3503312","DOIUrl":"10.1109/JSSC.2024.3503312","url":null,"abstract":"","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 1","pages":"3-3"},"PeriodicalIF":4.6,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10856410","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143054937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 76.9 ppm/K Nano-Watt PVT-Insensitive CMOS Voltage Reference Operating From 4 to 300 K for Integrated Cryogenic Quantum Interface
IF 5.4 1区 工程技术
IEEE Journal of Solid-state Circuits Pub Date : 2025-01-28 DOI: 10.1109/jssc.2025.3530472
Jing Wang, Jun He, Man-Kay Law, Xinzhe Wang, Futian Liang, Lin Cheng
{"title":"A 76.9 ppm/K Nano-Watt PVT-Insensitive CMOS Voltage Reference Operating From 4 to 300 K for Integrated Cryogenic Quantum Interface","authors":"Jing Wang, Jun He, Man-Kay Law, Xinzhe Wang, Futian Liang, Lin Cheng","doi":"10.1109/jssc.2025.3530472","DOIUrl":"https://doi.org/10.1109/jssc.2025.3530472","url":null,"abstract":"","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"21 1","pages":""},"PeriodicalIF":5.4,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143054938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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