2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES最新文献_第2页

Out-of-plane spin alighnment in ultrathin films of sodium-doped manganites as evidenced by FMR measurements FMR测量证明了钠掺杂锰的超薄膜的面外自旋排列

2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES Pub Date : 2010-06-21 DOI: 10.1109/MSMW.2010.5546041

A. Tovstolytkin, A. Pogorily, V. V. Dzyublyuk, D.I. Podylalovskii, A. Matviyenko

引用次数: 0

Sources of intense impulse microwave emission 强脉冲微波发射源

2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES Pub Date : 2010-06-21 DOI: 10.1109/MSMW.2010.5545994

I. Magda

引用次数: 0

The spurious-mode filter of a THz-range hollow dielectric waveguide 太赫兹范围中空介质波导的杂散模式滤波器

2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES Pub Date : 2010-06-21 DOI: 10.1109/MSMW.2010.5546034

A. I. Goroshko

{"title":"The spurious-mode filter of a THz-range hollow dielectric waveguide","authors":"A. I. Goroshko","doi":"10.1109/MSMW.2010.5546034","DOIUrl":"https://doi.org/10.1109/MSMW.2010.5546034","url":null,"abstract":"The spurious HE12and HE−+31modes are brought about not only in the hollow dielectric waveguide inhomogeneities [1,2] (namely, bendings, breaks (or discontinuities), etc),but also when the waveguide (along with an operating HE11 mode) becomes energized from the microwave oscillator and the laser. They, much like HE11, are linearly polarized. In consequence of this, these modes can well be suppressed using the filter built around the resonator acting as a segment bounded by one-dimensional wire gratings. The E vector polarization is parallel to wires. For an arbitrary length of this type of resonator the factor δ of the mode HEnm power transmission through the resonator, including the attenuation constant of the above mode and the phase-change constant ßnm, is determined by the following expression: equations where T and R are the power transmission and reflection factors for a single grating, whereas Φ is the wave phase being reflected from the grating. The peak microwave power transmission through the resonator occurs with a resonator length expressed as equations where q is the half-wave number the HEnmmode for the resonator length of δ, λ is the HEnm mode wavelength in the waveguide.","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126901566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A wideband receiver-module for passive MM wave imaging array: Optimization and test results 无源毫米波成像阵列的宽带接收模块:优化与测试结果

2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES Pub Date : 2010-06-21 DOI: 10.1109/MSMW.2010.5546113

V. Khaikin, V. R. Zakamov, V. Shashkin, S. Kuzmin, V. Radzikhovsky

引用次数: 3

Digital speckle-interferometric contactless measurer 数字散斑干涉非接触式测量仪

2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES Pub Date : 2010-06-21 DOI: 10.1109/MSMW.2010.5546007

V. Volosyuk, A. A. Shmatko, E. Aksyonov

引用次数: 0

Temperature dependence of the detected voltage of planar microwave diode that operation is based on carrier heating phenomena in strong electric field 基于载流子加热现象工作的平面微波二极管检测电压对强电场的温度依赖性

2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES Pub Date : 2010-06-21 DOI: 10.1109/MSMW.2010.5546136

A. Sužiedėlis, S. Ašmontas, J. Gradauskas, J. Kundrotas, V. Kazlauskaitė, A. Cerskus, V. Derkach, R. Golovashchenko, E. Goroshko, V. Korzh, T. Anbinderis

{"title":"Temperature dependence of the detected voltage of planar microwave diode that operation is based on carrier heating phenomena in strong electric field","authors":"A. Sužiedėlis, S. Ašmontas, J. Gradauskas, J. Kundrotas, V. Kazlauskaitė, A. Cerskus, V. Derkach, R. Golovashchenko, E. Goroshko, V. Korzh, T. Anbinderis","doi":"10.1109/MSMW.2010.5546136","DOIUrl":"https://doi.org/10.1109/MSMW.2010.5546136","url":null,"abstract":"Microwave (MW) detectors operating on the basis of charge carrier heating phenomena in semiconductor structures attracts attention of researchers due to the possibility to use such detectors in a wide frequency range. The voltage detected in the devices consists of hot carrier electromotive force arising over the contacts of the structure having n-n+ (or p-p+) junction. Planar design of the microwave diode enabled us to measure the power of electromagnetic radiation from microwaves up to infrared region [1]. The measurements were performed at room temperature, while, the decrease of crystal lattice temperature increases voltage sensitivity of the MW [2]. This increase is caused by an electron mobility and energy relaxation time increase in a high resistivity semiconductor. The sensitivity increase is also influenced by charge carrier density decrease due to their freeze-out at low temperatures. However in a number of applications flat dependence of voltage sensitivity on temperature is preferred. As it is well known, the electron mobility and energy relaxation time depend slightly on temperature in low resistivity semiconductors [3]. Moreover, carrier density in degenerated semiconductors does not depend on temperature. However, carrier heating in degenerated semiconductors encounters phonon assisted difficulties. We have recently demonstrated the ability to detect microwave radiation with planar microwave diode on the base of n-n+ junction with low resistivity n-GaAs at room temperature [4].","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123479613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

New measurement method for two-port noise parameters 双端口噪声参数测量的新方法

2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES Pub Date : 2010-06-21 DOI: 10.1109/MSMW.2010.5545989

D. Pasquet, C. Andrei, D. Lesenechal, P. Descamps

引用次数: 0

Millimeter radio astronomy as a probe for convective zone of the Sun 毫米射电天文学作为对太阳对流区的探测

2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES Pub Date : 2010-06-21 DOI: 10.1109/MSMW.2010.5546109

O. V. Arkhypov, A. Antonov

引用次数: 0

Analysis of H-slot resonators in microstrip line ground plane 微带线地平面中h槽谐振器的分析

2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES Pub Date : 2010-06-21 DOI: 10.1109/MSMW.2010.5546130

Y. Rassokhina, V. Krizhanovski

引用次数: 2

Amplitude-frequency conversion of semiconductor laser microwave modulation 半导体激光微波调制的幅频转换

2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES Pub Date : 2010-06-21 DOI: 10.1109/MSMW.2010.5546052

M. Orda-Zhigulina

引用次数: 0