New measurement method for two-port noise parameters

D. Pasquet, C. Andrei, D. Lesenechal, P. Descamps
{"title":"New measurement method for two-port noise parameters","authors":"D. Pasquet, C. Andrei, D. Lesenechal, P. Descamps","doi":"10.1109/MSMW.2010.5545989","DOIUrl":null,"url":null,"abstract":"The noise parameters are useful for the design of low noise amplifiers. They are usually deducted by the measurement of the noise figure that varies with the impedance presented at the input as in Eq. 1. F= F<inf>MIN</inf> + R<inf>N</inf> over ∜ Y<inf>S</inf>|Y<inf>S</inf> − Y<inf>OPT</inf>|<sup>2</sup> (1) where Y<inf>S</inf> is the admittance presented at the input and Y<inf>OPT</inf> is the admittance for which the noise figure has its lower value F<inf>MIN</inf>. R<inf>N</inf> is the noise resistance that characterizes the sensitivity to the variation of the impedance. Many optimization methods [1] have been developed in order to reach F<inf>MIN</inf>, R<inf>N</inf> and Y<inf>OPT</inf> from many measurement points.","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"216 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MSMW.2010.5545989","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The noise parameters are useful for the design of low noise amplifiers. They are usually deducted by the measurement of the noise figure that varies with the impedance presented at the input as in Eq. 1. F= FMIN + RN over ∜ YS|YS − YOPT|2 (1) where YS is the admittance presented at the input and YOPT is the admittance for which the noise figure has its lower value FMIN. RN is the noise resistance that characterizes the sensitivity to the variation of the impedance. Many optimization methods [1] have been developed in order to reach FMIN, RN and YOPT from many measurement points.
双端口噪声参数测量的新方法
噪声参数对低噪声放大器的设计有一定的参考价值。它们通常通过测量噪声系数来扣除,噪声系数随输入处阻抗的变化,如式1所示。F= FMIN + RN /∜YS|YS−YOPT|2(1)其中YS为输入端呈现的导纳,YOPT为噪声系数FMIN值较低的导纳。RN是噪声电阻,表征对阻抗变化的敏感性。为了从多个测量点得到FMIN、RN和YOPT,开发了许多优化方法[1]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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