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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.最新文献

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Widely-tunable single-mode bipolar cascade SGDBR lasers 宽可调谐单模双极级联SGDBR激光器
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382734
J. Klamkin, J. Getty, J. Hutchinson, L.A. Johannson, E. Skogen, L. Coldren
{"title":"Widely-tunable single-mode bipolar cascade SGDBR lasers","authors":"J. Klamkin, J. Getty, J. Hutchinson, L.A. Johannson, E. Skogen, L. Coldren","doi":"10.1109/ISLC.2004.1382734","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382734","url":null,"abstract":"A novel widely-tunable sampled-grating DBR laser with an electrically segmented gain section is presented. The lasers tune over 38 nm and exhibit differential efficiencies that nearly scale with the number of gain section segments.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132400127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effects of on-chip wavelength tuning on pulse and noise characteristics of monolithic mode-locked 40 GHz SIPBH DBR lasers 片上波长调谐对单片锁模40 GHz SIPBH DBR激光器脉冲和噪声特性的影响
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382772
R. Kaiser, B. Huttl, C. Kindel, H. Stolpe, H. Heidrich, S. Fidorra, W. Rehbein, S. Ritter, G. Jacumeit
{"title":"Effects of on-chip wavelength tuning on pulse and noise characteristics of monolithic mode-locked 40 GHz SIPBH DBR lasers","authors":"R. Kaiser, B. Huttl, C. Kindel, H. Stolpe, H. Heidrich, S. Fidorra, W. Rehbein, S. Ritter, G. Jacumeit","doi":"10.1109/ISLC.2004.1382772","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382772","url":null,"abstract":"Comprehensive experimental studies on the effects of wavelength tuning on pulse, noise, and locking characteristics of monolithic 1.5 /spl mu/m mode-locked SIPBH DBR lasers are presented in view of simple device operation, commercial application and fabrication.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133742920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence 基于氮化镓的高功率蓝紫色激光二极管，具有光束发散的小宽高比
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382757
Y. Bessho, T. Kano, T. Yamaguchi, D. Inoue, Y. Nomura, M. Shono
{"title":"GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence","authors":"Y. Bessho, T. Kano, T. Yamaguchi, D. Inoue, Y. Nomura, M. Shono","doi":"10.1109/ISLC.2004.1382757","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382757","url":null,"abstract":"We have developed GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence by optimizing the optical confinement in the active layer. A small aspect ratio of 1.3 and a high output power of 200 mW with kink-free operation have been achieved.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131526660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra stable narrow bandwidth 600 mW fiber coupled module 超稳定窄带宽600mw光纤耦合模块
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382732
S. Mohrdiek, T. Pliška, N. Matuschek, J. Troger
{"title":"Ultra stable narrow bandwidth 600 mW fiber coupled module","authors":"S. Mohrdiek, T. Pliška, N. Matuschek, J. Troger","doi":"10.1109/ISLC.2004.1382732","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382732","url":null,"abstract":"A 600 mW laser at 980 nm with low RMS noise below 0.1% is presented, wavelength stabilized by a fiber Bragg grating with 20 pm bandwidth. The light is provided in a polarization maintaining single mode fiber.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128528270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase correlation in self-pulsating distributed Bragg reflector semiconductor lasers for all-optical clock recovery 用于全光时钟恢复的自脉冲分布式Bragg反射半导体激光器的相位相关
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382729
J. Renaudier, C. Cosset, P. Gallion, H. Debrégeas-Sillard, O. LeGouezigou, B. Thedrez, G. Duan
{"title":"Phase correlation in self-pulsating distributed Bragg reflector semiconductor lasers for all-optical clock recovery","authors":"J. Renaudier, C. Cosset, P. Gallion, H. Debrégeas-Sillard, O. LeGouezigou, B. Thedrez, G. Duan","doi":"10.1109/ISLC.2004.1382729","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382729","url":null,"abstract":"Self-pulsation around 40 GHz with narrow spectral linewidth is obtained in distributed Bragg reflector semiconductor lasers. A theoretical model demonstrates that four-wave mixing is responsible for linewidth narrowing, an experimental signature of phase correlation.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129277058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
16 W CW output power from 100-/spl mu/m aperture laser based on quantum well asymmetric heterostructure with lowest internal loss 基于最小内部损耗量子阱非对称异质结构的100-/spl μ m孔径激光器的16 W连续输出功率
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382743
I. Tarasov, N. Pikhtin, S.O. SIipchenko, Z. N. Sokolova, D. Vinokurov
{"title":"16 W CW output power from 100-/spl mu/m aperture laser based on quantum well asymmetric heterostructure with lowest internal loss","authors":"I. Tarasov, N. Pikhtin, S.O. SIipchenko, Z. N. Sokolova, D. Vinokurov","doi":"10.1109/ISLC.2004.1382743","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382743","url":null,"abstract":"16 W CW room temperature front facet output optical power and 72% wall plug efficiency were attained in 100-/spl mu/m-aperture laser diodes based on quantum well heterostructure with ultra wide asymmetric waveguide.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117194324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High characteristic temperature of GaInNAs/GaAs narrow-ridge waveguide laser diodes grown by MOCVD MOCVD生长GaInNAs/GaAs窄脊波导激光二极管的高特性温度
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382760
J. Mitomo, T. Hino, Y. Hirano, H. Narui
{"title":"High characteristic temperature of GaInNAs/GaAs narrow-ridge waveguide laser diodes grown by MOCVD","authors":"J. Mitomo, T. Hino, Y. Hirano, H. Narui","doi":"10.1109/ISLC.2004.1382760","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382760","url":null,"abstract":"By investigating the growth-rate dependence of GaInNAs/GaAs MQW grown by MOCVD, high-performance narrow-ridge laser diodes operating at 1.3 /spl mu/m have been demonstrated with a low threshold current of 25 mA, a high characteristic temperature of 180 K, and a long lifetime of 10000 hours under 1 mW CW operation at room temperature.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116264366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multiple-wavelengths low-threshold membrane BH-DFB laser arrays 多波长低阈值膜BH-DFB激光阵列
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382733
T. Okamoto, T. Yamazaki, S. Sakamoto, S. Tamura, S. Arai
{"title":"Multiple-wavelengths low-threshold membrane BH-DFB laser arrays","authors":"T. Okamoto, T. Yamazaki, S. Sakamoto, S. Tamura, S. Arai","doi":"10.1109/ISLC.2004.1382733","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382733","url":null,"abstract":"Membrane BH-DFB laser arrays with different DFB grating periods were fabricated and characterized. RT-CW operation under optical pumping with a wavelength deviation less than /spl plusmn/0.4 nm and low threshold power with good uniformity were obtained.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123724068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low wall-plug consumption laser diodes by using active multi-mode interferometer (MMI) 基于有源多模干涉仪(MMI)的低壁塞消耗激光二极管
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382735
K. Hamamoto, M. Ohya, K. Naniwae, S. Sudo, T. Sasaki
{"title":"Low wall-plug consumption laser diodes by using active multi-mode interferometer (MMI)","authors":"K. Hamamoto, M. Ohya, K. Naniwae, S. Sudo, T. Sasaki","doi":"10.1109/ISLC.2004.1382735","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382735","url":null,"abstract":"We demonstrate low wall-plug consumption principle by using active multi-mode interferometer (MMI) with over 1 W output. It shows larger in the area of the active MMI contributes lower in the wall-plug consumption.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122227283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Mode-locking at 9.7 GHz repetition rate with 1.7 ps pulse duration in two-section QD lasers 在两段QD激光器中以9.7 GHz重复频率和1.7 ps脉冲持续时间锁模
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382750
A. Gubenko, L.M. Gadjiev, N. D. Il'inskaya, Y. Zadiranov, A. Zhukov, V. Ustinov, Z. Alferov, E. L. Portnoi, A. R. Kovsh, D. Livshits, N. Ledentsov
{"title":"Mode-locking at 9.7 GHz repetition rate with 1.7 ps pulse duration in two-section QD lasers","authors":"A. Gubenko, L.M. Gadjiev, N. D. Il'inskaya, Y. Zadiranov, A. Zhukov, V. Ustinov, Z. Alferov, E. L. Portnoi, A. R. Kovsh, D. Livshits, N. Ledentsov","doi":"10.1109/ISLC.2004.1382750","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382750","url":null,"abstract":"Ultrashort pulses of 1.7 ps at frequency as low as 9.7 GHz are demonstrated by passive mode-locking of monolithic two-section InAs/InGaAs (/spl lambda/=1.28 /spl mu/m) quantum-dot laser. Pulse shortening with the absorber section bias increase is observed.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122239155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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