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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.最新文献

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Applications of and advances in long-wavelength (>2/spl mu/m) lasers 长波(>2/spl μ m /m)激光器的应用与进展
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382726
M. Amann
{"title":"Applications of and advances in long-wavelength (>2/spl mu/m) lasers","authors":"M. Amann","doi":"10.1109/ISLC.2004.1382726","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382726","url":null,"abstract":"The recent progress in semiconductor lasers aimed for applications in the wavelength range above 2 /spl mu/m is reviewed. This particularly includes antimonide-based lasers and type-I and type-II quantum-cascade lasers.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128751295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers 单片锁模激光器中InGaAs量子点可饱和吸收体的特性
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382751
M. Thompson, C. Marinelli, Y. Chu, R. Sellin, R. Penty, L. White, M. van der Poel, D. Birkedal, J. Hvam, V. Ustinov, M. Lammlin, D. Bimberg
{"title":"Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers","authors":"M. Thompson, C. Marinelli, Y. Chu, R. Sellin, R. Penty, L. White, M. van der Poel, D. Birkedal, J. Hvam, V. Ustinov, M. Lammlin, D. Bimberg","doi":"10.1109/ISLC.2004.1382751","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382751","url":null,"abstract":"Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126540897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
InGaAsP/InP gain-levered tunable lasers InGaAsP/InP增益杠杆可调谐激光器
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382799
J.M. Huthinson, L.A. Johannson, J. Getty, J. Henness, L. Coldren
{"title":"InGaAsP/InP gain-levered tunable lasers","authors":"J.M. Huthinson, L.A. Johannson, J. Getty, J. Henness, L. Coldren","doi":"10.1109/ISLC.2004.1382799","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382799","url":null,"abstract":"A tunable gain-levered laser is fabricated on an InGaAsP ridge waveguide, and demonstrates increased CW differential efficiency and sharp DC turn-on, with hysteretic characteristics. The devices can be directly modulated up to >2.5 Gb/s.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127324596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra stable narrow bandwidth 600 mW fiber coupled module 超稳定窄带宽600mw光纤耦合模块
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382732
S. Mohrdiek, T. Pliška, N. Matuschek, J. Troger
{"title":"Ultra stable narrow bandwidth 600 mW fiber coupled module","authors":"S. Mohrdiek, T. Pliška, N. Matuschek, J. Troger","doi":"10.1109/ISLC.2004.1382732","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382732","url":null,"abstract":"A 600 mW laser at 980 nm with low RMS noise below 0.1% is presented, wavelength stabilized by a fiber Bragg grating with 20 pm bandwidth. The light is provided in a polarization maintaining single mode fiber.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128528270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase correlation in self-pulsating distributed Bragg reflector semiconductor lasers for all-optical clock recovery 用于全光时钟恢复的自脉冲分布式Bragg反射半导体激光器的相位相关
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382729
J. Renaudier, C. Cosset, P. Gallion, H. Debrégeas-Sillard, O. LeGouezigou, B. Thedrez, G. Duan
{"title":"Phase correlation in self-pulsating distributed Bragg reflector semiconductor lasers for all-optical clock recovery","authors":"J. Renaudier, C. Cosset, P. Gallion, H. Debrégeas-Sillard, O. LeGouezigou, B. Thedrez, G. Duan","doi":"10.1109/ISLC.2004.1382729","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382729","url":null,"abstract":"Self-pulsation around 40 GHz with narrow spectral linewidth is obtained in distributed Bragg reflector semiconductor lasers. A theoretical model demonstrates that four-wave mixing is responsible for linewidth narrowing, an experimental signature of phase correlation.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129277058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
16 W CW output power from 100-/spl mu/m aperture laser based on quantum well asymmetric heterostructure with lowest internal loss 基于最小内部损耗量子阱非对称异质结构的100-/spl μ m孔径激光器的16 W连续输出功率
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382743
I. Tarasov, N. Pikhtin, S.O. SIipchenko, Z. N. Sokolova, D. Vinokurov
{"title":"16 W CW output power from 100-/spl mu/m aperture laser based on quantum well asymmetric heterostructure with lowest internal loss","authors":"I. Tarasov, N. Pikhtin, S.O. SIipchenko, Z. N. Sokolova, D. Vinokurov","doi":"10.1109/ISLC.2004.1382743","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382743","url":null,"abstract":"16 W CW room temperature front facet output optical power and 72% wall plug efficiency were attained in 100-/spl mu/m-aperture laser diodes based on quantum well heterostructure with ultra wide asymmetric waveguide.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117194324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High characteristic temperature of GaInNAs/GaAs narrow-ridge waveguide laser diodes grown by MOCVD MOCVD生长GaInNAs/GaAs窄脊波导激光二极管的高特性温度
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382760
J. Mitomo, T. Hino, Y. Hirano, H. Narui
{"title":"High characteristic temperature of GaInNAs/GaAs narrow-ridge waveguide laser diodes grown by MOCVD","authors":"J. Mitomo, T. Hino, Y. Hirano, H. Narui","doi":"10.1109/ISLC.2004.1382760","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382760","url":null,"abstract":"By investigating the growth-rate dependence of GaInNAs/GaAs MQW grown by MOCVD, high-performance narrow-ridge laser diodes operating at 1.3 /spl mu/m have been demonstrated with a low threshold current of 25 mA, a high characteristic temperature of 180 K, and a long lifetime of 10000 hours under 1 mW CW operation at room temperature.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116264366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multiple-wavelengths low-threshold membrane BH-DFB laser arrays 多波长低阈值膜BH-DFB激光阵列
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382733
T. Okamoto, T. Yamazaki, S. Sakamoto, S. Tamura, S. Arai
{"title":"Multiple-wavelengths low-threshold membrane BH-DFB laser arrays","authors":"T. Okamoto, T. Yamazaki, S. Sakamoto, S. Tamura, S. Arai","doi":"10.1109/ISLC.2004.1382733","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382733","url":null,"abstract":"Membrane BH-DFB laser arrays with different DFB grating periods were fabricated and characterized. RT-CW operation under optical pumping with a wavelength deviation less than /spl plusmn/0.4 nm and low threshold power with good uniformity were obtained.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123724068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low wall-plug consumption laser diodes by using active multi-mode interferometer (MMI) 基于有源多模干涉仪(MMI)的低壁塞消耗激光二极管
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382735
K. Hamamoto, M. Ohya, K. Naniwae, S. Sudo, T. Sasaki
{"title":"Low wall-plug consumption laser diodes by using active multi-mode interferometer (MMI)","authors":"K. Hamamoto, M. Ohya, K. Naniwae, S. Sudo, T. Sasaki","doi":"10.1109/ISLC.2004.1382735","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382735","url":null,"abstract":"We demonstrate low wall-plug consumption principle by using active multi-mode interferometer (MMI) with over 1 W output. It shows larger in the area of the active MMI contributes lower in the wall-plug consumption.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122227283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Mode-locking at 9.7 GHz repetition rate with 1.7 ps pulse duration in two-section QD lasers 在两段QD激光器中以9.7 GHz重复频率和1.7 ps脉冲持续时间锁模
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382750
A. Gubenko, L.M. Gadjiev, N. D. Il'inskaya, Y. Zadiranov, A. Zhukov, V. Ustinov, Z. Alferov, E. L. Portnoi, A. R. Kovsh, D. Livshits, N. Ledentsov
{"title":"Mode-locking at 9.7 GHz repetition rate with 1.7 ps pulse duration in two-section QD lasers","authors":"A. Gubenko, L.M. Gadjiev, N. D. Il'inskaya, Y. Zadiranov, A. Zhukov, V. Ustinov, Z. Alferov, E. L. Portnoi, A. R. Kovsh, D. Livshits, N. Ledentsov","doi":"10.1109/ISLC.2004.1382750","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382750","url":null,"abstract":"Ultrashort pulses of 1.7 ps at frequency as low as 9.7 GHz are demonstrated by passive mode-locking of monolithic two-section InAs/InGaAs (/spl lambda/=1.28 /spl mu/m) quantum-dot laser. Pulse shortening with the absorber section bias increase is observed.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122239155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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