High characteristic temperature of GaInNAs/GaAs narrow-ridge waveguide laser diodes grown by MOCVD

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382760

J. Mitomo, T. Hino, Y. Hirano, H. Narui

引用次数: 1

Abstract

By investigating the growth-rate dependence of GaInNAs/GaAs MQW grown by MOCVD, high-performance narrow-ridge laser diodes operating at 1.3 /spl mu/m have been demonstrated with a low threshold current of 25 mA, a high characteristic temperature of 180 K, and a long lifetime of 10000 hours under 1 mW CW operation at room temperature.

查看原文本刊更多论文

MOCVD生长GaInNAs/GaAs窄脊波导激光二极管的高特性温度

通过研究MOCVD生长的GaInNAs/GaAs MQW的生长速率依赖性，证明了工作在1.3 /spl mu/m的高性能窄脊激光二极管，具有25 mA的低阈值电流，180 K的高特性温度，在室温下1 mW连续工作下的长寿命为10000小时。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

自引率

0.00%

发文量