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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.最新文献

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100 W-output power from passively cooled laser bar with 30% filling factor 100 w的被动冷却激光棒输出功率，填充系数为30%
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382742
A. Knigge, G. Erbert, P. Ressel, B. Sumpf, H. Wenzel, G. Trankle
{"title":"100 W-output power from passively cooled laser bar with 30% filling factor","authors":"A. Knigge, G. Erbert, P. Ressel, B. Sumpf, H. Wenzel, G. Trankle","doi":"10.1109/ISLC.2004.1382742","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382742","url":null,"abstract":"940 nm laser bars with optimised layer structures will be reported. 100 W output power, wall plug efficiency above 60% and a vertical divergence of 27/spl deg/ FWHM were achieved despite mounting on passively cooled heat sinks only.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130948551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-short GaAs/AlGaAs quantum-cascade micro-lasers based on monolithically integrated semiconductor-air Bragg-mirrors 基于单片集成半导体-空气布拉格反射镜的超短GaAs/AlGaAs量子级联微激光器
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382738
S. Hofling, R. Kallweit, A. Wolf, M. Emmerling, J. Reithmaier, A. Forchel
{"title":"Ultra-short GaAs/AlGaAs quantum-cascade micro-lasers based on monolithically integrated semiconductor-air Bragg-mirrors","authors":"S. Hofling, R. Kallweit, A. Wolf, M. Emmerling, J. Reithmaier, A. Forchel","doi":"10.1109/ISLC.2004.1382738","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382738","url":null,"abstract":"Quantum-cascade micro-lasers with Bragg-mirrors operating up to 315 K have been realized. Due to the large mode spacing in short cavity lasers and the limited gain bandwidth, single mode emission in such devices is possible.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115126434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
4-channel /spl times/ 10-Gb/s operation of AlGaInAs-MQW-BH-DFB-LD array for 1-3-/spl mu/m CWDM systems AlGaInAs-MQW-BH-DFB-LD阵列在1-3- 1 /spl mu/m CWDM系统中的4通道/spl次/ 10 gb /s运行
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382731
K. Tsuruoka, R. Kobayashi, Y. Ohsawa, T. Tsukuda, T. Kato, T. Sasaki, T. Nakamura
{"title":"4-channel /spl times/ 10-Gb/s operation of AlGaInAs-MQW-BH-DFB-LD array for 1-3-/spl mu/m CWDM systems","authors":"K. Tsuruoka, R. Kobayashi, Y. Ohsawa, T. Tsukuda, T. Kato, T. Sasaki, T. Nakamura","doi":"10.1109/ISLC.2004.1382731","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382731","url":null,"abstract":"We have developed a 4-channel AlGaInAs MQW-BH-DFB-LD array for 1.3-/spl mu/m CWDM systems. High-speed characteristics up to a 10-Gb/s operation on all channels, and more than a 40-Gb/s throughput woe obtained at 85/spl deg/C.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128379962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modified photonic crystal D/sub 3/ laser cavity for improving side mode suppression ratio 改进光子晶体D/sub - 3/激光腔，提高侧模抑制比
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382789
J.R. Cao, W. Kuang, S. Choi, J. O'Brien, P. Dapkus
{"title":"Modified photonic crystal D/sub 3/ laser cavity for improving side mode suppression ratio","authors":"J.R. Cao, W. Kuang, S. Choi, J. O'Brien, P. Dapkus","doi":"10.1109/ISLC.2004.1382789","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382789","url":null,"abstract":"We have demonstrated the ability to selectively modify the mode structure of multi-moded photonic crystal laser cavity. As a result, in this case an improved side-mode suppression ratio was obtained.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125342662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High single-mode power, monolithic polarization-controlled oxide-confined grating relief VCSELs 高单模功率，单片偏振控制的氧化受限光栅浮雕VCSELs
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382780
J. Ostermann, P. Debernardi, C. Jalics, M. Feneberg, A. Kroner, M.C. Reidi, M. Golling, R. Michalzik
{"title":"High single-mode power, monolithic polarization-controlled oxide-confined grating relief VCSELs","authors":"J. Ostermann, P. Debernardi, C. Jalics, M. Feneberg, A. Kroner, M.C. Reidi, M. Golling, R. Michalzik","doi":"10.1109/ISLC.2004.1382780","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382780","url":null,"abstract":"We present polarization-stable InGaAs/GaAs VCSELs with up to 6 mW single-mode output power. The orientation of their polarization along the [011],[0~11] [010] or [001] crystal axis is defined and controlled by a dielectric grating relief.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122576168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Sub 1% per 1 0000 h degradation rate of multimode 805 nm AlInGaAs lasers at 90/spl deg/C QW temperature and 16 mW//spl mu/m 多模805 nm AlInGaAs激光器在90/spl度/C QW温度和16 mW//spl mu/m下的每10万h降解率低于1%
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382776
C. Silfvenius, P. Blixt, C. Lindstrom, A. Feitisch
{"title":"Sub 1% per 1 0000 h degradation rate of multimode 805 nm AlInGaAs lasers at 90/spl deg/C QW temperature and 16 mW//spl mu/m","authors":"C. Silfvenius, P. Blixt, C. Lindstrom, A. Feitisch","doi":"10.1109/ISLC.2004.1382776","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382776","url":null,"abstract":"A 200 h life test of nitride passivated AlInGaAs multimode lasers, with more than 20% aluminum, operating at 16 mW//spl mu/m, demonstrated a linear degradation rate of less than 0.1%/1000 h under stress conditions of 90 /spl deg/C QW temperature and 2500 A/cm/sup 2/ current density. No devices failed.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"199 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120965800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
VCSEL tolerance to optical feedback for inter-chip optical interconnects 芯片间光互连的VCSEL光反馈容忍度
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382782
L. Chrostowski, P. Bala Subrahmanyam, Y. Zhou, C. Chang-Hasnain
{"title":"VCSEL tolerance to optical feedback for inter-chip optical interconnects","authors":"L. Chrostowski, P. Bala Subrahmanyam, Y. Zhou, C. Chang-Hasnain","doi":"10.1109/ISLC.2004.1382782","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382782","url":null,"abstract":"We demonstrate that optical feedback in single-mode VCSELs only induces a power-penalty with no error-floor, thus enabling the integration of VCSELs without optical isolators, for optical interconnect applications.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"262 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116062418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers 单片锁模激光器中InGaAs量子点可饱和吸收体的特性
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382751
M. Thompson, C. Marinelli, Y. Chu, R. Sellin, R. Penty, L. White, M. van der Poel, D. Birkedal, J. Hvam, V. Ustinov, M. Lammlin, D. Bimberg
{"title":"Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers","authors":"M. Thompson, C. Marinelli, Y. Chu, R. Sellin, R. Penty, L. White, M. van der Poel, D. Birkedal, J. Hvam, V. Ustinov, M. Lammlin, D. Bimberg","doi":"10.1109/ISLC.2004.1382751","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382751","url":null,"abstract":"Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126540897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Applications of and advances in long-wavelength (>2/spl mu/m) lasers 长波(>2/spl μ m /m)激光器的应用与进展
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382726
M. Amann
{"title":"Applications of and advances in long-wavelength (>2/spl mu/m) lasers","authors":"M. Amann","doi":"10.1109/ISLC.2004.1382726","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382726","url":null,"abstract":"The recent progress in semiconductor lasers aimed for applications in the wavelength range above 2 /spl mu/m is reviewed. This particularly includes antimonide-based lasers and type-I and type-II quantum-cascade lasers.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128751295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InGaAsP/InP gain-levered tunable lasers InGaAsP/InP增益杠杆可调谐激光器
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382799
J.M. Huthinson, L.A. Johannson, J. Getty, J. Henness, L. Coldren
{"title":"InGaAsP/InP gain-levered tunable lasers","authors":"J.M. Huthinson, L.A. Johannson, J. Getty, J. Henness, L. Coldren","doi":"10.1109/ISLC.2004.1382799","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382799","url":null,"abstract":"A tunable gain-levered laser is fabricated on an InGaAsP ridge waveguide, and demonstrates increased CW differential efficiency and sharp DC turn-on, with hysteretic characteristics. The devices can be directly modulated up to >2.5 Gb/s.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127324596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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