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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.最新文献

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100 W-output power from passively cooled laser bar with 30% filling factor 100 w的被动冷却激光棒输出功率，填充系数为30%
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382742
A. Knigge, G. Erbert, P. Ressel, B. Sumpf, H. Wenzel, G. Trankle
{"title":"100 W-output power from passively cooled laser bar with 30% filling factor","authors":"A. Knigge, G. Erbert, P. Ressel, B. Sumpf, H. Wenzel, G. Trankle","doi":"10.1109/ISLC.2004.1382742","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382742","url":null,"abstract":"940 nm laser bars with optimised layer structures will be reported. 100 W output power, wall plug efficiency above 60% and a vertical divergence of 27/spl deg/ FWHM were achieved despite mounting on passively cooled heat sinks only.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130948551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-short GaAs/AlGaAs quantum-cascade micro-lasers based on monolithically integrated semiconductor-air Bragg-mirrors 基于单片集成半导体-空气布拉格反射镜的超短GaAs/AlGaAs量子级联微激光器
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382738
S. Hofling, R. Kallweit, A. Wolf, M. Emmerling, J. Reithmaier, A. Forchel
{"title":"Ultra-short GaAs/AlGaAs quantum-cascade micro-lasers based on monolithically integrated semiconductor-air Bragg-mirrors","authors":"S. Hofling, R. Kallweit, A. Wolf, M. Emmerling, J. Reithmaier, A. Forchel","doi":"10.1109/ISLC.2004.1382738","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382738","url":null,"abstract":"Quantum-cascade micro-lasers with Bragg-mirrors operating up to 315 K have been realized. Due to the large mode spacing in short cavity lasers and the limited gain bandwidth, single mode emission in such devices is possible.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115126434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
4-channel /spl times/ 10-Gb/s operation of AlGaInAs-MQW-BH-DFB-LD array for 1-3-/spl mu/m CWDM systems AlGaInAs-MQW-BH-DFB-LD阵列在1-3- 1 /spl mu/m CWDM系统中的4通道/spl次/ 10 gb /s运行
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382731
K. Tsuruoka, R. Kobayashi, Y. Ohsawa, T. Tsukuda, T. Kato, T. Sasaki, T. Nakamura
{"title":"4-channel /spl times/ 10-Gb/s operation of AlGaInAs-MQW-BH-DFB-LD array for 1-3-/spl mu/m CWDM systems","authors":"K. Tsuruoka, R. Kobayashi, Y. Ohsawa, T. Tsukuda, T. Kato, T. Sasaki, T. Nakamura","doi":"10.1109/ISLC.2004.1382731","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382731","url":null,"abstract":"We have developed a 4-channel AlGaInAs MQW-BH-DFB-LD array for 1.3-/spl mu/m CWDM systems. High-speed characteristics up to a 10-Gb/s operation on all channels, and more than a 40-Gb/s throughput woe obtained at 85/spl deg/C.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128379962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modified photonic crystal D/sub 3/ laser cavity for improving side mode suppression ratio 改进光子晶体D/sub - 3/激光腔，提高侧模抑制比
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382789
J.R. Cao, W. Kuang, S. Choi, J. O'Brien, P. Dapkus
{"title":"Modified photonic crystal D/sub 3/ laser cavity for improving side mode suppression ratio","authors":"J.R. Cao, W. Kuang, S. Choi, J. O'Brien, P. Dapkus","doi":"10.1109/ISLC.2004.1382789","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382789","url":null,"abstract":"We have demonstrated the ability to selectively modify the mode structure of multi-moded photonic crystal laser cavity. As a result, in this case an improved side-mode suppression ratio was obtained.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125342662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High single-mode power, monolithic polarization-controlled oxide-confined grating relief VCSELs 高单模功率，单片偏振控制的氧化受限光栅浮雕VCSELs
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382780
J. Ostermann, P. Debernardi, C. Jalics, M. Feneberg, A. Kroner, M.C. Reidi, M. Golling, R. Michalzik
{"title":"High single-mode power, monolithic polarization-controlled oxide-confined grating relief VCSELs","authors":"J. Ostermann, P. Debernardi, C. Jalics, M. Feneberg, A. Kroner, M.C. Reidi, M. Golling, R. Michalzik","doi":"10.1109/ISLC.2004.1382780","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382780","url":null,"abstract":"We present polarization-stable InGaAs/GaAs VCSELs with up to 6 mW single-mode output power. The orientation of their polarization along the [011],[0~11] [010] or [001] crystal axis is defined and controlled by a dielectric grating relief.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122576168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Sub 1% per 1 0000 h degradation rate of multimode 805 nm AlInGaAs lasers at 90/spl deg/C QW temperature and 16 mW//spl mu/m 多模805 nm AlInGaAs激光器在90/spl度/C QW温度和16 mW//spl mu/m下的每10万h降解率低于1%
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382776
C. Silfvenius, P. Blixt, C. Lindstrom, A. Feitisch
{"title":"Sub 1% per 1 0000 h degradation rate of multimode 805 nm AlInGaAs lasers at 90/spl deg/C QW temperature and 16 mW//spl mu/m","authors":"C. Silfvenius, P. Blixt, C. Lindstrom, A. Feitisch","doi":"10.1109/ISLC.2004.1382776","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382776","url":null,"abstract":"A 200 h life test of nitride passivated AlInGaAs multimode lasers, with more than 20% aluminum, operating at 16 mW//spl mu/m, demonstrated a linear degradation rate of less than 0.1%/1000 h under stress conditions of 90 /spl deg/C QW temperature and 2500 A/cm/sup 2/ current density. No devices failed.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"199 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120965800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Widely-tunable single-mode bipolar cascade SGDBR lasers 宽可调谐单模双极级联SGDBR激光器
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382734
J. Klamkin, J. Getty, J. Hutchinson, L.A. Johannson, E. Skogen, L. Coldren
{"title":"Widely-tunable single-mode bipolar cascade SGDBR lasers","authors":"J. Klamkin, J. Getty, J. Hutchinson, L.A. Johannson, E. Skogen, L. Coldren","doi":"10.1109/ISLC.2004.1382734","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382734","url":null,"abstract":"A novel widely-tunable sampled-grating DBR laser with an electrically segmented gain section is presented. The lasers tune over 38 nm and exhibit differential efficiencies that nearly scale with the number of gain section segments.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132400127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence 基于氮化镓的高功率蓝紫色激光二极管，具有光束发散的小宽高比
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382757
Y. Bessho, T. Kano, T. Yamaguchi, D. Inoue, Y. Nomura, M. Shono
{"title":"GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence","authors":"Y. Bessho, T. Kano, T. Yamaguchi, D. Inoue, Y. Nomura, M. Shono","doi":"10.1109/ISLC.2004.1382757","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382757","url":null,"abstract":"We have developed GaN-based high-power blue-violet laser diodes with a small aspect ratio for beam divergence by optimizing the optical confinement in the active layer. A small aspect ratio of 1.3 and a high output power of 200 mW with kink-free operation have been achieved.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131526660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of on-chip wavelength tuning on pulse and noise characteristics of monolithic mode-locked 40 GHz SIPBH DBR lasers 片上波长调谐对单片锁模40 GHz SIPBH DBR激光器脉冲和噪声特性的影响
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382772
R. Kaiser, B. Huttl, C. Kindel, H. Stolpe, H. Heidrich, S. Fidorra, W. Rehbein, S. Ritter, G. Jacumeit
{"title":"Effects of on-chip wavelength tuning on pulse and noise characteristics of monolithic mode-locked 40 GHz SIPBH DBR lasers","authors":"R. Kaiser, B. Huttl, C. Kindel, H. Stolpe, H. Heidrich, S. Fidorra, W. Rehbein, S. Ritter, G. Jacumeit","doi":"10.1109/ISLC.2004.1382772","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382772","url":null,"abstract":"Comprehensive experimental studies on the effects of wavelength tuning on pulse, noise, and locking characteristics of monolithic 1.5 /spl mu/m mode-locked SIPBH DBR lasers are presented in view of simple device operation, commercial application and fabrication.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133742920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
VCSEL tolerance to optical feedback for inter-chip optical interconnects 芯片间光互连的VCSEL光反馈容忍度
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI: 10.1109/ISLC.2004.1382782
L. Chrostowski, P. Bala Subrahmanyam, Y. Zhou, C. Chang-Hasnain
{"title":"VCSEL tolerance to optical feedback for inter-chip optical interconnects","authors":"L. Chrostowski, P. Bala Subrahmanyam, Y. Zhou, C. Chang-Hasnain","doi":"10.1109/ISLC.2004.1382782","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382782","url":null,"abstract":"We demonstrate that optical feedback in single-mode VCSELs only induces a power-penalty with no error-floor, thus enabling the integration of VCSELs without optical isolators, for optical interconnect applications.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"262 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116062418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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