多模805 nm AlInGaAs激光器在90/spl度/C QW温度和16 mW//spl mu/m下的每10万h降解率低于1%

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382776

C. Silfvenius, P. Blixt, C. Lindstrom, A. Feitisch

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摘要

对含铝量超过20%的氮化钝化AlInGaAs多模激光器进行了200 h寿命测试，结果表明，在90 /spl℃QW温度和2500 A/cm/sup /电流密度的应力条件下，线性降解率小于0.1%/1000 h。没有设备故障。

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Sub 1% per 1 0000 h degradation rate of multimode 805 nm AlInGaAs lasers at 90/spl deg/C QW temperature and 16 mW//spl mu/m

A 200 h life test of nitride passivated AlInGaAs multimode lasers, with more than 20% aluminum, operating at 16 mW//spl mu/m, demonstrated a linear degradation rate of less than 0.1%/1000 h under stress conditions of 90 /spl deg/C QW temperature and 2500 A/cm/sup 2/ current density. No devices failed.

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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

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