MOCVD生长GaInNAs/GaAs窄脊波导激光二极管的高特性温度

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382760

J. Mitomo, T. Hino, Y. Hirano, H. Narui

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引用次数: 1

摘要

通过研究MOCVD生长的GaInNAs/GaAs MQW的生长速率依赖性，证明了工作在1.3 /spl mu/m的高性能窄脊激光二极管，具有25 mA的低阈值电流，180 K的高特性温度，在室温下1 mW连续工作下的长寿命为10000小时。

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High characteristic temperature of GaInNAs/GaAs narrow-ridge waveguide laser diodes grown by MOCVD

By investigating the growth-rate dependence of GaInNAs/GaAs MQW grown by MOCVD, high-performance narrow-ridge laser diodes operating at 1.3 /spl mu/m have been demonstrated with a low threshold current of 25 mA, a high characteristic temperature of 180 K, and a long lifetime of 10000 hours under 1 mW CW operation at room temperature.

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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

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