2020 IEEE International Conference on Plasma Science (ICOPS)最新文献

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Ozone Generation Efficiency Using Nanosecond Pulsed Plasma at Above ATM Pressures 在大气压以上使用纳秒脉冲等离子体产生臭氧的效率
2020 IEEE International Conference on Plasma Science (ICOPS) Pub Date : 2020-12-06 DOI: 10.1109/ICOPS37625.2020.9717502
Sanjana Kerketta, M. Gundersen, A. Kuthi
{"title":"Ozone Generation Efficiency Using Nanosecond Pulsed Plasma at Above ATM Pressures","authors":"Sanjana Kerketta, M. Gundersen, A. Kuthi","doi":"10.1109/ICOPS37625.2020.9717502","DOIUrl":"https://doi.org/10.1109/ICOPS37625.2020.9717502","url":null,"abstract":"Ozone affects the performance of plasma-based systems including plasma assisted combustion, treatment of combustion byproducts, and other applications requiring high concentrations of reactive radicals. However, mechanisms for ozone generation at higher pressures need more thorough understanding. Nanosecond pulsed plasma has been shown to produce higher ozone generation efficiencies than most other forms of electrical discharges1,2. In this report, studies of ozone generation efficiencies of 160g/kWh at atmospheric pressure from a 40kV, 5ns rise time pulse source with ~73mJ pulse energy operating at 1Hz are presented. Additionally, ozone generation efficiencies of 82g/kWh and 5g/kWh are obtained at same pulse settings at 2 atm and 3 atm pressure respectively. It is seen that ozone generation decreases rapidly as one goes above atmospheric pressure. The reason is hypothesized to be a combined effect of lower energy dissipation in the plasma at higher pressures and collisional deactivation mechanisms. Streamers propagate with different speeds at different pressures resulting in changes of plasma conductivity and other transport properties. The reactor impedance increases which in turn increases the mismatch between the reactor and source and affects power transfer efficiency at higher pressures.","PeriodicalId":122132,"journal":{"name":"2020 IEEE International Conference on Plasma Science (ICOPS)","volume":"11 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113967769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Focused Ion Beam Optics Driven by Sheath Nonlinearity and Wave-Plasma Interaction in Restricted Geometry 受限几何中鞘层非线性驱动的聚焦离子束光学和波等离子体相互作用
2020 IEEE International Conference on Plasma Science (ICOPS) Pub Date : 2020-12-06 DOI: 10.1109/ICOPS37625.2020.9717878
S. Bhattacharjee, Sanjeev Maurya, S. Barman
{"title":"Focused Ion Beam Optics Driven by Sheath Nonlinearity and Wave-Plasma Interaction in Restricted Geometry","authors":"S. Bhattacharjee, Sanjeev Maurya, S. Barman","doi":"10.1109/ICOPS37625.2020.9717878","DOIUrl":"https://doi.org/10.1109/ICOPS37625.2020.9717878","url":null,"abstract":"In recent years electromagnetic wave-driven plasma sources for focused ion beams (FIB) have attracted considerable attention1. However, developing such plasma sources for FIB is nontrivial and can pose mighty challenges. Often a micro-meter size beam needs to be extracted to maintain a small object size for demagnification, thereby demanding that the plasma source be as small as possible. The situation is exacerbated in case of microwave driven plasma sources because of geometrical cutoff limitation, which demands a minimum chamber dimension for wave propagation and subsequent plasma generation2. Additionally, the density cutoff limitation is encountered when the plasma frequency becomes larger than the wave frequency. The two limitations are often inextricably intertwined and pose considerable confrontation for wave-particle sustainability, often rendering surprising observations3.","PeriodicalId":122132,"journal":{"name":"2020 IEEE International Conference on Plasma Science (ICOPS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114736982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Rectangular Corrugated KU-Band BWO With Dual Resonator 带双谐振腔的矩形波纹ku波段BWO
2020 IEEE International Conference on Plasma Science (ICOPS) Pub Date : 2020-12-06 DOI: 10.1109/icops37625.2020.9717438
M. Nadeem, Zhanliang Wang, Bilawal Ali, H. Gong, Z. Duan, Y. Gong
{"title":"A Rectangular Corrugated KU-Band BWO With Dual Resonator","authors":"M. Nadeem, Zhanliang Wang, Bilawal Ali, H. Gong, Z. Duan, Y. Gong","doi":"10.1109/icops37625.2020.9717438","DOIUrl":"https://doi.org/10.1109/icops37625.2020.9717438","url":null,"abstract":"A Ku-band backward wave oscillator (BWO) with a sheet- beam source and dual prebunch resonating cavity is presented in this paper. The design presented in this paper couples a rectangular grated dual-sided slow wave structure (SWS) with two pairs of resonating cavities to improve the efficiency of the device. The rectangular grated SWS offers the benefit of a high coupling impedance to provide high beam-wave interaction efficiency. A sheet beam electron source of large aspect ratio is used, with the dimensions of 24.5mm width and 1mm thickness. With the properly sized reflector resonators, the BWO is shown to have an output of 340MW, with a peak efficiency of up to 34.55% at the operating frequency of 14.21GHz. The output mode is TE11, with mode efficiency of 93.7%. The input current is 4.1 kA and the input beam energy is 240kV.","PeriodicalId":122132,"journal":{"name":"2020 IEEE International Conference on Plasma Science (ICOPS)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124383307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Production of Hydrogen Plasma by Compact ECR Source for Efficient Volume Generation of H− Ions 用紧凑ECR源生产氢等离子体以高效生成氢离子
2020 IEEE International Conference on Plasma Science (ICOPS) Pub Date : 2020-12-06 DOI: 10.1109/ICOPS37625.2020.9717797
P. Singh, D. Sahu, R. Narayanan, A. Ganguli, S. Kar, R. D. Tarey
{"title":"Production of Hydrogen Plasma by Compact ECR Source for Efficient Volume Generation of H− Ions","authors":"P. Singh, D. Sahu, R. Narayanan, A. Ganguli, S. Kar, R. D. Tarey","doi":"10.1109/ICOPS37625.2020.9717797","DOIUrl":"https://doi.org/10.1109/ICOPS37625.2020.9717797","url":null,"abstract":"Hydrogen plasma produced inside a compact ECR plasma source (CEPS)1 was allowed to expand into a large expansion chamber (dia. ≈ 50 cm, length ≈ 75 cm). Plasma parameters were measured using an on-axis Langmuir Probe. The CEPS uses NdFeB ring magnets with a complex field structure that has a magnetic mirror trap near the ECR zone followed by an on-axis magnetic null within the source region, and a monotonically decreasing field in the expansion chamber. Typically, at ≈ 600 W microwave power (2.45 GHz), 0.3–2 mTorr hydrogen pressure, the plasma density $napprox 10^{10} text{cm}^{-3}$ and electron temperature $T_{mathrm{e}}approx 25 text{eV}$ in the expansion chamber near the source, while further downstream $n$ and $T_{mathrm{e}}$ are reduced to ≈ 109 cm−3 and 5 eV, respectively2. However, for 3–10 mTorr the plasma contains two electron populations - a high density, cold, bulk population and a low-density, warm population ($n_{w}/napprox 0.01; T_{w}/T_{e}approx 10$). Another feature observed at the higher pressures is that $T_{mathrm{e}}$ cools to less than 1 eV about ≈ 30 cm from the source mouth. Such low $T_{mathrm{e}}$ bulk electrons are important for generation of H− ions by the volume production mode, which may be preferred over the caesiated grid method due to maintenance issues associated with the latter3. An interesting feature of the plasma is that the normalized plasma density and magnetic field profiles overlap fairly accurately indicating very little cross-field transport of the hydrogen plasma. In general, one finds from the experiments that the nature of the CEPS magnetic field is such as to promote efficient electron heating and high $T_{mathrm{e}}$, which are not desirable for volume production of H− ions. To achieve the latter, another field configuration that eliminates the adverse effects of the magnetic mirror and the null has been set up and results from the latter configuration will be presented at the conference.","PeriodicalId":122132,"journal":{"name":"2020 IEEE International Conference on Plasma Science (ICOPS)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126354805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon Oxide Based on-Chip Electron Sources 基于硅氧化物的片上电子源
2020 IEEE International Conference on Plasma Science (ICOPS) Pub Date : 2020-12-06 DOI: 10.1109/ICOPS37625.2020.9717449
Wei Yang, Gongtao Wu, Zhiwei Li, Yuwei Wang, Xianlong Wei
{"title":"Silicon Oxide Based on-Chip Electron Sources","authors":"Wei Yang, Gongtao Wu, Zhiwei Li, Yuwei Wang, Xianlong Wei","doi":"10.1109/ICOPS37625.2020.9717449","DOIUrl":"https://doi.org/10.1109/ICOPS37625.2020.9717449","url":null,"abstract":"On-chip electron sources driven by electricity have been pursued by researchers for more than 60 years for their light in mass, compactness, being integratable, high energy- efficiency and fast response, etc. Thought many efforts have been devoted to them, the results are still unsatisfactory. Recently, we have proposed a new type of on-chip electron source based on electroformed silicon oxide between graphene films on silicon oxide1, which is named electron- emitting nanodiode (EEND). Electron emission from our devices is thought to be generated from horizontal tunneling diodes formed in electroformed silicon oxide. The EEND can be turned on by a voltage of ~7 V in ~100 ns and show an emission current of up to several microamperes, corresponding to an emission density of ~106 A/cm2 and emission efficiency as high as 16.6%. Since using semicondutor fabrication technolgy makes its fabrication very easy, an array of 100 EENDs is fabricated in an effective area of 82 μm ×18 μm and its emission current reaches 73.4 μA, which exhibits a global emission density of 5 A/cm2 and stable emission with negligible current degradation over tens of hours under a vacuum of ~5 × 10-6 Pa. Recent experiments show emission current increases linearly with the numbers of EENDs in an array, and emission current has reached to 1 mA. Combined advantages of high emission current and density, high emission efficiency, low working voltage, and easy fabrication make our on-chip electron sources promising in realizing miniature and on-chip electronic devices and systems based on free electron beams.","PeriodicalId":122132,"journal":{"name":"2020 IEEE International Conference on Plasma Science (ICOPS)","volume":"177 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125998870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ARC Deflection Length Affected by Diagonal Magnetic field in 3D Electromagnetic Thermal Fluid Simulation 三维电磁热流体模拟中对角磁场对电弧偏转长度的影响
2020 IEEE International Conference on Plasma Science (ICOPS) Pub Date : 2020-12-06 DOI: 10.1109/ICOPS37625.2020.9717492
Yukinori Sugiyama, K. Matsumoto, Zhen-an Ren, Y. Nemoto, Y. Maeda, T. Iwao
{"title":"ARC Deflection Length Affected by Diagonal Magnetic field in 3D Electromagnetic Thermal Fluid Simulation","authors":"Yukinori Sugiyama, K. Matsumoto, Zhen-an Ren, Y. Nemoto, Y. Maeda, T. Iwao","doi":"10.1109/ICOPS37625.2020.9717492","DOIUrl":"https://doi.org/10.1109/ICOPS37625.2020.9717492","url":null,"abstract":"TIG arc welding is widely used because of welding various metals with high quality. In recent years, the birthrate is declining and aging. Thus, the number of technicians will decrease, and the automation of welding has become widespread. In the automation of welding, it is important to improve the moving speed of the torch and the efficiency of welding. However, the arc cannot follow the high speeding movement of the torch, and it will cause the welding defect such as a re-striking. Thus, the method of applying an external magnetic field to the arc has been studied. When the transverse magnetic field is applied, the arc is deflected by the electromagnetic force and is controlled to direction of the torch movement because of preventing weld defects. It is difficult to apply a transverse magnetic field in actual welding. Thus, we focus on the diagonal magnetic fields. In this paper, the arc deflection length affected by the diagonal magnetic field in 3D electromagnetic thermal simulation is calculated. As a result, the arc deflection length increased with increasing the magnetic flux density of the diagonal magnetic field. Also, the arc deflection length affected by the diagonal magnetic field was decreased as compared to the transverse magnetic field.","PeriodicalId":122132,"journal":{"name":"2020 IEEE International Conference on Plasma Science (ICOPS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121454588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fluctuation Phenomena in Multiphase AC Arc Under Nitrogen Atmosphere 氮气气氛下多相交流电弧的波动现象
2020 IEEE International Conference on Plasma Science (ICOPS) Pub Date : 2020-12-06 DOI: 10.1109/ICOPS37625.2020.9717801
Manabu Tanaka, H. Maruyama, Yuta Kugimiya, Takuya Suenaga, Takayuki Watanabe, Tsuguo Ueda, Hideki Tousaki
{"title":"Fluctuation Phenomena in Multiphase AC Arc Under Nitrogen Atmosphere","authors":"Manabu Tanaka, H. Maruyama, Yuta Kugimiya, Takuya Suenaga, Takayuki Watanabe, Tsuguo Ueda, Hideki Tousaki","doi":"10.1109/ICOPS37625.2020.9717801","DOIUrl":"https://doi.org/10.1109/ICOPS37625.2020.9717801","url":null,"abstract":"Temperature fluctuation phenomena in a multiphase AC arc was successfully observed by the high-speed camera system with appropriate band-pass filters.","PeriodicalId":122132,"journal":{"name":"2020 IEEE International Conference on Plasma Science (ICOPS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132354815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Terahertz Current-Driven Lasing and Amplification in Graphene-Based vdW Heterostructures 石墨烯基vdW异质结构中的太赫兹电流驱动激光和放大
2020 IEEE International Conference on Plasma Science (ICOPS) Pub Date : 2020-12-06 DOI: 10.1109/ICOPS37625.2020.9717557
T. Otsuji
{"title":"Terahertz Current-Driven Lasing and Amplification in Graphene-Based vdW Heterostructures","authors":"T. Otsuji","doi":"10.1109/ICOPS37625.2020.9717557","DOIUrl":"https://doi.org/10.1109/ICOPS37625.2020.9717557","url":null,"abstract":"Carrier-injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) range, leading to new types of THz lasers [1]. The dual-gate graphene channel transistor (DG-GFET) structure serves carrier population inversion in the lateral p-i-n junctions under complementary dual-gate biased and forward drain biased conditions, pro-moting spontaneous incoherent THz light emission. A laser cavity structure implemented in the gain area can transcend the incoherent light emission to the single-mode lasing.","PeriodicalId":122132,"journal":{"name":"2020 IEEE International Conference on Plasma Science (ICOPS)","volume":"266 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132355766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Remote Plasma-Assisted Synthesis of Graphene for Development of Flexible Biosensors 用于柔性生物传感器开发的远程等离子体辅助石墨烯合成
2020 IEEE International Conference on Plasma Science (ICOPS) Pub Date : 2020-12-06 DOI: 10.1109/ICOPS37625.2020.9717835
J. Y. Pae, M. Matham, R. Medwal, R. Rawat
{"title":"Remote Plasma-Assisted Synthesis of Graphene for Development of Flexible Biosensors","authors":"J. Y. Pae, M. Matham, R. Medwal, R. Rawat","doi":"10.1109/ICOPS37625.2020.9717835","DOIUrl":"https://doi.org/10.1109/ICOPS37625.2020.9717835","url":null,"abstract":"Due to graphene's unique 2D monolayer structure, it has been reported to have high charge carrier mobility and also high surface energy. Therefore, it is an ideal substrate for the development of label-free biosensors as it allows more biomolecules to be immobilized on the sensing surface. This would lead to enhanced sensitivity due to a greater number of binding sites available for sensing the analytes. Hence, graphene is an attractive material for the research and development of a wide variety of biosensors for healthcare and biomedical applications.","PeriodicalId":122132,"journal":{"name":"2020 IEEE International Conference on Plasma Science (ICOPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133991947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Global Model Development Using Least-Squares Weighted Residual Methods 利用最小二乘加权残差方法建立全局模型
2020 IEEE International Conference on Plasma Science (ICOPS) Pub Date : 2020-12-06 DOI: 10.1109/ICOPS37625.2020.9717857
T. Jenkins, S. Averkin
{"title":"Global Model Development Using Least-Squares Weighted Residual Methods","authors":"T. Jenkins, S. Averkin","doi":"10.1109/ICOPS37625.2020.9717857","DOIUrl":"https://doi.org/10.1109/ICOPS37625.2020.9717857","url":null,"abstract":"A popular paradigm for the study of complex plasma discharges is the global model, which can provide estimates of volume-averaged plasma parameters of interest (number densities, temperatures, viable chemical reaction paths, etc.). Although global models are useful for parameter scoping, they cannot generally provide information on the spatial distribution of these physics processes. In this work, we present a reformulation of the global model equations using numerical methods that approximately capture these spatial dependencies. Plasma quantities are expressed in terms of rational functional representations with undetermined coefficients. Least-squares weighted residual methods are then applied to the ensuing global model equations to determine these coefficients in a way that minimizes various norms (L2, L-inf, etc.). Optimal coefficients corresponding to a given norm can thus be computed for all plasma components, permitting approximate profiles to be constructed.","PeriodicalId":122132,"journal":{"name":"2020 IEEE International Conference on Plasma Science (ICOPS)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131658347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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