Terahertz Current-Driven Lasing and Amplification in Graphene-Based vdW Heterostructures

Abstract

Carrier-injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) range, leading to new types of THz lasers [1]. The dual-gate graphene channel transistor (DG-GFET) structure serves carrier population inversion in the lateral p-i-n junctions under complementary dual-gate biased and forward drain biased conditions, pro-moting spontaneous incoherent THz light emission. A laser cavity structure implemented in the gain area can transcend the incoherent light emission to the single-mode lasing.