{"title":"石墨烯基vdW异质结构中的太赫兹电流驱动激光和放大","authors":"T. Otsuji","doi":"10.1109/ICOPS37625.2020.9717557","DOIUrl":null,"url":null,"abstract":"Carrier-injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) range, leading to new types of THz lasers [1]. The dual-gate graphene channel transistor (DG-GFET) structure serves carrier population inversion in the lateral p-i-n junctions under complementary dual-gate biased and forward drain biased conditions, pro-moting spontaneous incoherent THz light emission. A laser cavity structure implemented in the gain area can transcend the incoherent light emission to the single-mode lasing.","PeriodicalId":122132,"journal":{"name":"2020 IEEE International Conference on Plasma Science (ICOPS)","volume":"266 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Terahertz Current-Driven Lasing and Amplification in Graphene-Based vdW Heterostructures\",\"authors\":\"T. Otsuji\",\"doi\":\"10.1109/ICOPS37625.2020.9717557\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Carrier-injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) range, leading to new types of THz lasers [1]. The dual-gate graphene channel transistor (DG-GFET) structure serves carrier population inversion in the lateral p-i-n junctions under complementary dual-gate biased and forward drain biased conditions, pro-moting spontaneous incoherent THz light emission. A laser cavity structure implemented in the gain area can transcend the incoherent light emission to the single-mode lasing.\",\"PeriodicalId\":122132,\"journal\":{\"name\":\"2020 IEEE International Conference on Plasma Science (ICOPS)\",\"volume\":\"266 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Conference on Plasma Science (ICOPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICOPS37625.2020.9717557\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Conference on Plasma Science (ICOPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICOPS37625.2020.9717557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Terahertz Current-Driven Lasing and Amplification in Graphene-Based vdW Heterostructures
Carrier-injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) range, leading to new types of THz lasers [1]. The dual-gate graphene channel transistor (DG-GFET) structure serves carrier population inversion in the lateral p-i-n junctions under complementary dual-gate biased and forward drain biased conditions, pro-moting spontaneous incoherent THz light emission. A laser cavity structure implemented in the gain area can transcend the incoherent light emission to the single-mode lasing.
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