发布求助
文献互助 智能选刊 最新文献

2017 12th European Microwave Integrated Circuits Conference (EuMIC)最新文献

筛选
英文 中文
Gain-configurable lower sideband parametric downconverter 增益可配置的下边带参数下变频器
2017 12th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2017-10-01 DOI: 10.23919/EUMIC.2017.8230673
Zhixing Zhao, S. Magierowski, L. Belostotski
{"title":"Gain-configurable lower sideband parametric downconverter","authors":"Zhixing Zhao, S. Magierowski, L. Belostotski","doi":"10.23919/EUMIC.2017.8230673","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230673","url":null,"abstract":"This paper presents a gain-configurable CMOS parametric downconverter operating at 5.275 GHz. The downconverter measured gain is 24 dB at 5.275 GHz with no DC power drawn by the RF amplification component. This report is the first demonstration of a CMOS parametric downconverter operated in the 6-GHz regime.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114279715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A concurrent triple-band digital transmitter using feedforward noise cancellation for delta-sigma modulation 一种采用前馈噪声消除的并发三波段数字发射机，用于delta-sigma调制
2017 12th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2017-10-01 DOI: 10.23919/EUMIC.2017.8230743
SungWon Chung, R. Ma, S. Shinjo, K. Yamanaka, K. Teo
{"title":"A concurrent triple-band digital transmitter using feedforward noise cancellation for delta-sigma modulation","authors":"SungWon Chung, R. Ma, S. Shinjo, K. Yamanaka, K. Teo","doi":"10.23919/EUMIC.2017.8230743","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230743","url":null,"abstract":"A concurrent triple-band digital transmitter architecture with relaxed RF output filter requirement is presented in this paper. With non-contiguous inter-band carrier aggregation, all digital transmitters based on delta-sigma modulation and pulse-width modulation have suffered from out-of-band noise and spurious tones, requiring extremely demanding RF output filter design. We demonstrate a feedforward noise cancellation technique in order to suppress the out-of-band quantization noise of concurrent triple-band delta-sigma modulation for the first time. An experimental prototype based on an asymmetric RF power combiner and a 5-bit 7-GS/s DAC for noise cancellation realizes concurrent triple-band transmission of LTE Advanced signals, which consist of 710 MHz, 1750 MHz, and 2510 MHz bands with 30-MHz aggregated total bandwidth. The prototype achieves better than 42-dB spurious-free dynamic range (SFDR) and −47-dBc adjacent channel power ratio (ACPR), enabled by up to 12-dB out-of-band noise suppression.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"187 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115182119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Low-loss and compact 2.4-GHz CMOS bandpass filter with finite transmission zeros 具有有限传输零点的低损耗和紧凑的2.4 ghz CMOS带通滤波器
2017 12th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2017-10-01 DOI: 10.23919/EUMIC.2017.8230733
Ru-Yu Wang, Sen Wang
{"title":"Low-loss and compact 2.4-GHz CMOS bandpass filter with finite transmission zeros","authors":"Ru-Yu Wang, Sen Wang","doi":"10.23919/EUMIC.2017.8230733","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230733","url":null,"abstract":"In this paper, a low-loss and high-selectivity compact CMOS bandpass filter at S band is presented. The filter based on lumped elements achieves low insertion loss and ultrawide bandwidth. Moreover, the resonators of the filter result in two finite transmission zeros. One transmission zero is in the lower stopband, and the other is in the upper stopband, thus improving the selectivity of the filter significantly. The filter is designed and fabricated in a standard 0.18-μm CMOS technology with a chip area of 745 mm × 790 mm including all testing pads. The filter achieves 2.7-dB insertion loss and 64% 3-dB bandwidth at 2.5 GHz. Measured results also show that the two transmission zeros are at 1.1 GHz and 4.8 GHz featuring 26.6-dB and 44.5-dB rejection, respectively.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126337789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a reconfigurable rectangular waveguide phase shifter with metallic posts 金属柱可重构矩形波导移相器的设计
2017 12th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2017-10-01 DOI: 10.23919/EUMIC.2017.8230730
Lucas Polo‐López, J. Masa-Campos, J. Ruiz‐Cruz
{"title":"Design of a reconfigurable rectangular waveguide phase shifter with metallic posts","authors":"Lucas Polo‐López, J. Masa-Campos, J. Ruiz‐Cruz","doi":"10.23919/EUMIC.2017.8230730","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230730","url":null,"abstract":"In this work the design of a Ku-band reconfigurable phase shifter implemented in waveguide technology is presented. The reconfiguration capability of the device is achieved by the insertion of a pair of adjustable metallic posts. A prototype of this device has been manufactured using a 3D printing technique in order to show the proposed concept. The measured return loss and phase performances of this prototype are compared with the simulated full-wave response of the phase shifter. The proposed waveguide component shows a great application potential in the area of beam steering phased arrays implemented in waveguide technology, since the presented phase shifter is fully developed in waveguide, not requiring the additional transitions to planar structures usually needed to integrate lumped components.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129567410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
6–18GHz 13W reactive matched GaN power amplifier MMIC 6-18GHz 13W无功匹配GaN功率放大器MMIC
2017 12th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2017-10-01 DOI: 10.23919/EUMIC.2017.8230732
H. Tao, W. Hong, Bin Zhang
{"title":"6–18GHz 13W reactive matched GaN power amplifier MMIC","authors":"H. Tao, W. Hong, Bin Zhang","doi":"10.23919/EUMIC.2017.8230732","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230732","url":null,"abstract":"The design and performance of a compact 6–18GHz power amplifier MMIC utilizing 0.2 pm gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. An output power of 41.4 dBm to 43.3 dBm (average 42.3dBm) with over 16 dB power gain and a power added efficiency (PAE) of 21% to 35% over the band of 6–18 GHz under a drain voltage of 28 V in CW mode have been achieved. The chip size is compact with the size of 2.6∗3.6 mm2 and it delivers an average output power density 1.83 W/mm2 over the chip area. The thermal resistance is 1.55 T7W measured in CW mode.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130672513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A 2 GS/s 118 mW digital-mapping direct digital frequency synthesizer in 65nm CMOS 65nm CMOS数字映射直接数字频率合成器2gs /s 118mw
2017 12th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2017-10-01 DOI: 10.23919/EUMIC.2017.8230701
Abdel Martinez Alonso, Xia Yuan, M. Miyahara, A. Matsuzawa
{"title":"A 2 GS/s 118 mW digital-mapping direct digital frequency synthesizer in 65nm CMOS","authors":"Abdel Martinez Alonso, Xia Yuan, M. Miyahara, A. Matsuzawa","doi":"10.23919/EUMIC.2017.8230701","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230701","url":null,"abstract":"This paper describes a Digital-Mapping Direct Digital Frequency Synthesizer consuming only 118 mW when operating at 2 GS/s in 65nm CMOS. The active area is 0.142 mm2 with an accumulator size and amplitude resolution of 24 and 10 bits respectively. The Spurious-Free Dynamic Range is better than 41 dBc for synthesized frequencies below 750 MHz and 30 dBc over the entire Nyquist bandwidth. The Power Efficiency reaches 59 mW/(GS/s) by implementing a Complementary DualPhase Latch-Based architecture. Prototypes encapsulated in a 144-pin Low-Profile Quad Flat Package were employed during measurements. The achieved FoM is 542 GS/s • 2(SFDR/6)/W.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115198561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
3.5-GHz ultra-compact GaN class-E integrated Doherty MMIC PA for 5G massive-MIMO base station applications 3.5 ghz超紧凑型GaN e类集成Doherty MMIC PA，用于5G大规模mimo基站应用
2017 12th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2017-10-01 DOI: 10.23919/EUMIC.2017.8230693
S. Maroldt, M. Ercoli
{"title":"3.5-GHz ultra-compact GaN class-E integrated Doherty MMIC PA for 5G massive-MIMO base station applications","authors":"S. Maroldt, M. Ercoli","doi":"10.23919/EUMIC.2017.8230693","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230693","url":null,"abstract":"This paper presents a high gain ultra-compact Doherty PA design approach based on 28 V two-stage GaN MMICs. A 20 W asymmetric and 26 W symmetric Doherty amplifier operating in the 3.4–3.6 GHz band were designed into a small footprint 7×7 mm2 QFN plastic package for 5G massive MIMO base station applications. The use of package-integrated low-loss passive devices to realize the class-E like inverted Doherty combiner resulted in excellent final stage drain efficiencies of 60 % at 8 dB output power back-off and 65 % in saturation, to the best of the authors' knowledge the highest reported final stage drain efficiency for GaN MMIC based integrated Doherty PAs in the 3.5 GHz band. The full asymmetric PA board yields a measured line-up efficiency of 43 % with an associated gain of 26 dB at 35 dBm average power of a 20 MHz LTE signal, corresponding to 8 dB output power back-off.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122472371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Reactively matched 3-stage C-X-Ku band GaN MMIC power amplifier 反应匹配三级C-X-Ku波段GaN MMIC功率放大器
2017 12th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2017-10-01 DOI: 10.23919/EUMIC.2017.8230668
G. C. Barisich, E. Gebara, Huifang Gu, C. Storey, Pouya Aflaki, J. Papapolymerou
{"title":"Reactively matched 3-stage C-X-Ku band GaN MMIC power amplifier","authors":"G. C. Barisich, E. Gebara, Huifang Gu, C. Storey, Pouya Aflaki, J. Papapolymerou","doi":"10.23919/EUMIC.2017.8230668","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230668","url":null,"abstract":"A 3-stage wideband power amplifier (PA) using a 0.15 pm gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) process from NRC is designed, fabricated, and measured. After characterization of the high electron mobility transistor (HEMT), a non-linear model was created from the measured data for use in the design. The reactively matched 3.8 mm × 1.8 mm PA also uses resistive elements for gain compensation and circuit stability. Measurements at 20 dBm source power show 35–38 dBm output power and 10–18% PAE over a 6 to 17 GHz bandwidth. These results demonstrate the highest output power per die area for a 3-stage GaN MMIC PA of this bandwidth in this power range.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128864799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Highly efficient GaN RF power amplifier MMIC using low-voltage driver 采用低压驱动的高效GaN射频功率放大器MMIC
2017 12th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2017-10-01 DOI: 10.23919/EUMIC.2017.8230691
M. Acar, O. Ceylan, Felicia Kiebler, S. Pires, S. Maroldt
{"title":"Highly efficient GaN RF power amplifier MMIC using low-voltage driver","authors":"M. Acar, O. Ceylan, Felicia Kiebler, S. Pires, S. Maroldt","doi":"10.23919/EUMIC.2017.8230691","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230691","url":null,"abstract":"In this paper, we show that low-voltage operation of a GaN transistor (5.5V) as a driver allows very high line-up efficiency, including driver and end-stage. We realized two-stage MMIC in 0.25pm GaN HEMT technology. The MMIC die and high harmonic matching circuits were assembled into a standard ceramic RF package. The load-pull measurement results of the packaged MMIC show that the line-up efficiency is preserved to >70% in the presence of an 8 dB output power variation. We designed a PCB based on the load-pull measurement data as a demonstration board. We measured 76% line-up efficiency with an output power of 35.4dBm and a linear gain of 27dB at 2.14 GHz. Applying a WCDMA signal, a −52.4dBc ACLR performance was observed at 29.4dBm average output power using a vector switched generalized memory polynomial digital pre-distortion (VS-GMP DPD) algorithm.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126278064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High performance GaN single-chip frontend for compact X-band AESA systems 用于紧凑型x波段AESA系统的高性能GaN单芯片前端
2017 12th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2017-10-01 DOI: 10.23919/EUMIC.2017.8230655
P. Schuh, H. Sledzik, R. Reber
{"title":"High performance GaN single-chip frontend for compact X-band AESA systems","authors":"P. Schuh, H. Sledzik, R. Reber","doi":"10.23919/EUMIC.2017.8230655","DOIUrl":"https://doi.org/10.23919/EUMIC.2017.8230655","url":null,"abstract":"A next generation of AESA antennas will be challenged with the need for lower size, weight, power and cost (SWAP-C). This leads to enhanced demands especially with regard to the integration density of the RF-part inside a T/R module. The semiconductor material GaN has proven its capacity for high power amplifiers, robust receive components as well as switch components for separation of transmit and receive mode. This paper will describe the design and measurement results of a GaN-based single-chip T/R module frontend (HPA, LNA and SPDT) using UMS GH25 technology and covering the frequency range from 8 GHz to 12 GHz. Key performance parameters of the frontend are 13 W minimum transmit (TX) output power over the whole frequency range with peak power up to 17 W. The frontend in receive (RX) mode has a noise figure below 3.2 dB over the whole frequency range, and can survive more than 5 W input power. The large signal insertion loss of the used SPDT is below 0.9 dB at 43 dBm input power level.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124010102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书