增益可配置的下边带参数下变频器

Zhixing Zhao, S. Magierowski, L. Belostotski
{"title":"增益可配置的下边带参数下变频器","authors":"Zhixing Zhao, S. Magierowski, L. Belostotski","doi":"10.23919/EUMIC.2017.8230673","DOIUrl":null,"url":null,"abstract":"This paper presents a gain-configurable CMOS parametric downconverter operating at 5.275 GHz. The downconverter measured gain is 24 dB at 5.275 GHz with no DC power drawn by the RF amplification component. This report is the first demonstration of a CMOS parametric downconverter operated in the 6-GHz regime.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Gain-configurable lower sideband parametric downconverter\",\"authors\":\"Zhixing Zhao, S. Magierowski, L. Belostotski\",\"doi\":\"10.23919/EUMIC.2017.8230673\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a gain-configurable CMOS parametric downconverter operating at 5.275 GHz. The downconverter measured gain is 24 dB at 5.275 GHz with no DC power drawn by the RF amplification component. This report is the first demonstration of a CMOS parametric downconverter operated in the 6-GHz regime.\",\"PeriodicalId\":120932,\"journal\":{\"name\":\"2017 12th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 12th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMIC.2017.8230673\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2017.8230673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

本文提出了一种工作频率为5.275 GHz、可配置增益的CMOS参数下变频器。下变频器在5.275 GHz时的测量增益为24 dB,射频放大元件不消耗直流功率。本报告首次演示了在6 ghz频段工作的CMOS参数下变频器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gain-configurable lower sideband parametric downconverter
This paper presents a gain-configurable CMOS parametric downconverter operating at 5.275 GHz. The downconverter measured gain is 24 dB at 5.275 GHz with no DC power drawn by the RF amplification component. This report is the first demonstration of a CMOS parametric downconverter operated in the 6-GHz regime.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信