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1981 IEEE MTT-S International Microwave Symposium Digest最新文献

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Advanced RF Circuit Miniaturization for 800 MHz Land Mobile Radio Unit 800兆赫陆地移动无线电装置的先进射频电路小型化
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129862
S. Seki, N. Kanmuri, S. Yuki
{"title":"Advanced RF Circuit Miniaturization for 800 MHz Land Mobile Radio Unit","authors":"S. Seki, N. Kanmuri, S. Yuki","doi":"10.1109/MWSYM.1981.1129862","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129862","url":null,"abstract":"Advanced RF circuits for a mobile radio unit are presented. A new compact mobile radio unit has been successfully developed having an 800MHz frequency synthesizer, a thick-film MIC up to 900MHz frequency region and a SAW device. The size and weight of this unit are 1,500 cm/sup 3/ and 2.4 kg. respectively. and it possesses 1,000 radio channels.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125595121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Coupler Design in Open Dielectric Waveguide with Web Registration 开放介质波导中带网页配准的耦合器设计
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129803
G. Lindgren
{"title":"Coupler Design in Open Dielectric Waveguide with Web Registration","authors":"G. Lindgren","doi":"10.1109/MWSYM.1981.1129803","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129803","url":null,"abstract":"The design and evaluation of an open dielectric waveguide 3 dB coupler with web registration is described. The design includes the selection of waveguide permittivity, size and shape. This design achieved 3 percent bandwidth with 0.7 dB insertion loss, and greater than 22 dB isolation.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130091774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Progress of Microwave Semiconductor Devices in Japan 日本微波半导体器件的研究进展
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129860
K. Sekido
{"title":"Progress of Microwave Semiconductor Devices in Japan","authors":"K. Sekido","doi":"10.1109/MWSYM.1981.1129860","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129860","url":null,"abstract":"This paper reviews recent progress and development status of microwave semiconductor devices in Japan. Since in Japan, major development efforts have been concentrated to the GaAs MESFET devices developments, the paper provides particular emphasis to the introduction of GaAs MESFET device progress in Japan. Progress status in other semiconductor device area is also reviewed briefly.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127271742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 1.75 - 6 GHz Miniaturized GaAs FET Amplifier Using Quasi-Lumped Element Impedance Matching Networks 基于准集总元件阻抗匹配网络的1.75 - 6ghz小型化GaAs场效应管放大器
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129910
S. Moghe, R. Gray, W. Tsai
{"title":"A 1.75 - 6 GHz Miniaturized GaAs FET Amplifier Using Quasi-Lumped Element Impedance Matching Networks","authors":"S. Moghe, R. Gray, W. Tsai","doi":"10.1109/MWSYM.1981.1129910","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129910","url":null,"abstract":"A quasi-lumped element impedance matching technique was developed for a multi-octave bandwidth FET amplifier. The lumped elements were realized by parallel capacitors, high impedance band wires and etched lines on a 0.170 x 0.085 x 0.010 inch alumina substrate. A two-stage amplifier has been constructed using this method and yields 17/spl plusmn/ dB gain and 3.5 dB maximum noise figure over 1.75 to 6.0 GHz band.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128827430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Broad-Band, Low-Noise Receiver at W-Band 一种w波段宽带低噪声接收机
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129838
C. Hu, A. Denning
{"title":"A Broad-Band, Low-Noise Receiver at W-Band","authors":"C. Hu, A. Denning","doi":"10.1109/MWSYM.1981.1129838","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129838","url":null,"abstract":"This paper describes a W-band, fixed tuned receiver that achieves double side-band noise figure less than 5.5 dB over 10 GHz bandwidth for both LO and RF ports. This low DSB noise figure includes a 1.6 dB contribution from an amplifier with 1000 MHz bandwidth. Only three milliwatts of LO power, obtained through a broadband frequency doubler, are required for receiver's optimum performance without biasing the mixer diodes.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130455150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Magnetostatic Wave Compressive Receiver 静磁波压缩接收机
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129938
C. Nothnick, J. Billing, M. Daniel, T. Adams
{"title":"Magnetostatic Wave Compressive Receiver","authors":"C. Nothnick, J. Billing, M. Daniel, T. Adams","doi":"10.1109/MWSYM.1981.1129938","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129938","url":null,"abstract":"An S-band compressive receiver if utilizing an MSW (Magneto-stetic Wave) epitaxial YIG dispersive delay line for broadband spectral analysis is presented. The dispersive line, centered at 2.7 GHz with an 870 GHz bandwidth dispered over 0.2 MSCC allows analysis of a 650 GHz band with 12 MHz resolution.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127997692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 100-kW Solid-State Coaxial Limiter for L-Band 用于l波段的100千瓦固态同轴限制器
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129887
S. Patel, H. Goldie
{"title":"A 100-kW Solid-State Coaxial Limiter for L-Band","authors":"S. Patel, H. Goldie","doi":"10.1109/MWSYM.1981.1129887","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129887","url":null,"abstract":"This paper concerns the development of a 100-kW peak power, self-biased, pulsed limiter covering the 1250 to 1350 MHz band. The limiter requires no external power sources and uses four 70 mu m PIN diodes as the active elements in a power-sharing, axially symmetric, shunt-loaded arrangement in a 50-ohm, 7/8-inch OD, coaxial transmission line. Two shorting stubs used for zero-bias tuning and dc returns are in the same electrical plane as the PIN diodes. Four symmetric Schottky-barrier, high-voltage detector diodes decoupled from the main transmission line provide fast leading edge, high-amplitude current biasing pulses to each PIN diode. The one-stage limiter demonstrated a spike leakage of 2.8 kW/65 ns, a flat leakage of 32 watts peak, and a 1-dB recovery period of 17 mu s for an incident power level of 100 kW/2.8 mu s. Passive zero-bias loss was under 0.5 dB.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121086940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 2-12 Ghz Feedback Amplifier on GaAs GaAs上的2- 12ghz反馈放大器
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129924
K. Niclas, W. Wilser
{"title":"A 2-12 Ghz Feedback Amplifier on GaAs","authors":"K. Niclas, W. Wilser","doi":"10.1109/MWSYM.1981.1129924","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129924","url":null,"abstract":"A 2-12 GHz monolithic feedback amplifier has been designed. Initial experiments, made on a semi-monolithic unit, yielded 5.4 dB of minimum gain from 2-12 GHz and 3.8 dB of minimum gain between 2 and 15.3 GHz.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117344310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
TM/sub 01p/ Tubular and Cylindrical Dielectric Resonator Mode TM/sub 01p/管状和圆柱形介质谐振器模式
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129856
P. Guillon, J. P. Balabaud, Y. Garault
{"title":"TM/sub 01p/ Tubular and Cylindrical Dielectric Resonator Mode","authors":"P. Guillon, J. P. Balabaud, Y. Garault","doi":"10.1109/MWSYM.1981.1129856","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129856","url":null,"abstract":"The electric dipole resonance of a cylindrical and a tubular dielectric resonator is investigated. Data are given about the resonant frequencies and the structure of the field surrounding the resonator. The data agree well with experimental results.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125364742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A Novel Harmonic Balancing Bridge for Characterizing Microwave Modules for Phased Array Antenna Service 一种用于相控阵天线微波模块特性的新型谐波平衡桥
1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129822
D. Griffin
{"title":"A Novel Harmonic Balancing Bridge for Characterizing Microwave Modules for Phased Array Antenna Service","authors":"D. Griffin","doi":"10.1109/MWSYM.1981.1129822","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129822","url":null,"abstract":"A novel microwave bridge incorporating fundamental and harmonic balancing has been developed for measuring amplitude and phase characteristics of items, such as phased array antenna amplifiers, that exhibit small but significant nonlinear behaviour. Measured characteristics relate to the output traveling waves from the item which may, however, be terminated in any safe load. Successful bridge design and operation in a fundamental range of 2 to 4 GHz, a second harmonic range 4 to 8 GHz and a third harmonic range 6 to 12 GHz has been achieved. Sensitivity and resolution are such that it is possible to differentiate between leading and trailing edge phase characteristics of pulse operated microwave amplifiers. Results obtained with various load impedances can be used to plot equi-amplitude and equi-phase contours on a Smith chart at fundamental and harmonic frequencies.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126730649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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