A 1.75 - 6 GHz Miniaturized GaAs FET Amplifier Using Quasi-Lumped Element Impedance Matching Networks

Abstract

A quasi-lumped element impedance matching technique was developed for a multi-octave bandwidth FET amplifier. The lumped elements were realized by parallel capacitors, high impedance band wires and etched lines on a 0.170 x 0.085 x 0.010 inch alumina substrate. A two-stage amplifier has been constructed using this method and yields 17/spl plusmn/ dB gain and 3.5 dB maximum noise figure over 1.75 to 6.0 GHz band.