{"title":"用于l波段的100千瓦固态同轴限制器","authors":"S. Patel, H. Goldie","doi":"10.1109/MWSYM.1981.1129887","DOIUrl":null,"url":null,"abstract":"This paper concerns the development of a 100-kW peak power, self-biased, pulsed limiter covering the 1250 to 1350 MHz band. The limiter requires no external power sources and uses four 70 mu m PIN diodes as the active elements in a power-sharing, axially symmetric, shunt-loaded arrangement in a 50-ohm, 7/8-inch OD, coaxial transmission line. Two shorting stubs used for zero-bias tuning and dc returns are in the same electrical plane as the PIN diodes. Four symmetric Schottky-barrier, high-voltage detector diodes decoupled from the main transmission line provide fast leading edge, high-amplitude current biasing pulses to each PIN diode. The one-stage limiter demonstrated a spike leakage of 2.8 kW/65 ns, a flat leakage of 32 watts peak, and a 1-dB recovery period of 17 mu s for an incident power level of 100 kW/2.8 mu s. Passive zero-bias loss was under 0.5 dB.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 100-kW Solid-State Coaxial Limiter for L-Band\",\"authors\":\"S. Patel, H. Goldie\",\"doi\":\"10.1109/MWSYM.1981.1129887\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper concerns the development of a 100-kW peak power, self-biased, pulsed limiter covering the 1250 to 1350 MHz band. The limiter requires no external power sources and uses four 70 mu m PIN diodes as the active elements in a power-sharing, axially symmetric, shunt-loaded arrangement in a 50-ohm, 7/8-inch OD, coaxial transmission line. Two shorting stubs used for zero-bias tuning and dc returns are in the same electrical plane as the PIN diodes. Four symmetric Schottky-barrier, high-voltage detector diodes decoupled from the main transmission line provide fast leading edge, high-amplitude current biasing pulses to each PIN diode. The one-stage limiter demonstrated a spike leakage of 2.8 kW/65 ns, a flat leakage of 32 watts peak, and a 1-dB recovery period of 17 mu s for an incident power level of 100 kW/2.8 mu s. Passive zero-bias loss was under 0.5 dB.\",\"PeriodicalId\":120372,\"journal\":{\"name\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1981.1129887\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129887","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper concerns the development of a 100-kW peak power, self-biased, pulsed limiter covering the 1250 to 1350 MHz band. The limiter requires no external power sources and uses four 70 mu m PIN diodes as the active elements in a power-sharing, axially symmetric, shunt-loaded arrangement in a 50-ohm, 7/8-inch OD, coaxial transmission line. Two shorting stubs used for zero-bias tuning and dc returns are in the same electrical plane as the PIN diodes. Four symmetric Schottky-barrier, high-voltage detector diodes decoupled from the main transmission line provide fast leading edge, high-amplitude current biasing pulses to each PIN diode. The one-stage limiter demonstrated a spike leakage of 2.8 kW/65 ns, a flat leakage of 32 watts peak, and a 1-dB recovery period of 17 mu s for an incident power level of 100 kW/2.8 mu s. Passive zero-bias loss was under 0.5 dB.