2015 IEEE International Integrated Reliability Workshop (IIRW)最新文献_第4页

Influence of MOSFET geometry on the statistical distribution of NBTI induced parameter degradation MOSFET几何形状对NBTI诱导参数退化统计分布的影响

2015 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 2015-10-01 DOI: 10.1109/IIRW.2015.7437073

C. Schlunder, F. Proebster, J. Berthold, W. Gustin, H. Reisinger

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引用次数: 6

Novel Charge Pumping method applied to tri-gate MOSFETs for reliability characterization 新型电荷泵送方法应用于三栅极mosfet的可靠性表征

2015 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 2015-10-01 DOI: 10.1109/IIRW.2015.7437070

B. Bittel, S. Novak, S. Ramey, S. Padiyar, J. Ryan, J. Campbell, K. Cheung

引用次数: 0

Smart-array for pipelined BTI characterization 用于流水线BTI表征的智能阵列

2015 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI: 10.1109/IIRW.2015.7437076

V. Putcha, Marko Simicic, P. Weckx, B. Parvais, J. Franco, B. Kaczer, D. Linten, D. Verkest, A. Thean, G. Groeseneken

引用次数: 8

Defect-centric perspective of combined BTI and RTN time-dependent variability 以缺陷为中心的BTI和RTN组合时变率的观点

2015 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI: 10.1109/IIRW.2015.7437060

P. Weckx, B. Kaczer, J. Franco, P. Roussel, E. Bury, A. Subirats, G. Groeseneken, F. Catthoor, D. Linten, P. Raghavan, A. Thean

引用次数: 10

Advanced MOSFET variability and reliability characterization array 先进的 MOSFET 变异性和可靠性鉴定阵列

2015 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 1900-01-01 DOI: 10.1109/IIRW.2015.7437071

Marko Simicic, V. Putcha, B. Parvais, P. Weckx, B. Kaczer, G. Groeseneken, G. Gielen, D. Linten, A. Thean

引用次数: 14