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2013 18th IEEE European Test Symposium (ETS)最新文献

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Reducing power dissipation in memory repair for high defect densities 降低高缺陷密度内存修复中的功耗
2013 18th IEEE European Test Symposium (ETS) Pub Date : 2013-05-27 DOI: 10.1109/ETS.2013.6569372
P. Papavramidou, M. Nicolaidis
{"title":"Reducing power dissipation in memory repair for high defect densities","authors":"P. Papavramidou, M. Nicolaidis","doi":"10.1109/ETS.2013.6569372","DOIUrl":"https://doi.org/10.1109/ETS.2013.6569372","url":null,"abstract":"Nanometric scaling steadily increases failure rates, which are expected to be exacerbated as we are approaching the ultimate limits of CMOS and to worsen yet as we will engage in post-CMOS technologies. Moving towards ultimate CMOS and post CMOS also requires increasingly aggressive power reduction. An efficient way to reduce power consists in reducing voltage. Aggressive voltage reduction will result in increasing the numbers of weak memory cells that will operate falsely. Thus, it is desirable to dispose memory repair architectures able to cope with high defect densities. At the same time, reliability is another major concern with aggressive technology scaling. In this context, recent techniques combining memory repair architectures with ECC were able to aggressively reduce repair cost for high defect densities. However, even under the drastic cost reduction obtained with these approaches, power penalty can still be significant as we consider increasing levels of defect density. This paper proposes new repair architectures that are advantageously combined with the previously proposed solutions and allow drastic reduction of dissipated power.","PeriodicalId":118063,"journal":{"name":"2013 18th IEEE European Test Symposium (ETS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128570239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Computing detection probability of delay defects in signal line tsvs 计算信号线tsvs中延迟缺陷的检测概率
2013 18th IEEE European Test Symposium (ETS) Pub Date : 2013-05-27 DOI: 10.1109/ETS.2013.6569349
C. Metzler, A. Todri, A. Bosio, L. Dilillo, P. Girard, A. Virazel, P. Vivet, M. Belleville
{"title":"Computing detection probability of delay defects in signal line tsvs","authors":"C. Metzler, A. Todri, A. Bosio, L. Dilillo, P. Girard, A. Virazel, P. Vivet, M. Belleville","doi":"10.1109/ETS.2013.6569349","DOIUrl":"https://doi.org/10.1109/ETS.2013.6569349","url":null,"abstract":"Three-dimensional stacking technology promises to solve the interconnect bottleneck problem by using Through-Silicon-Vias (TSVs) to vertically connect circuit layers. However, manufacturing steps may lead to partly broken or incompletely filled TSVs that may degrade the performance and reduce the useful lifetime of a 3D IC. Due to combinations of physical factors such as switching activity, supply noise and crosstalk, path delays can experience speed-up or slow-down that could let the effect of resistive open TSV go undetected by conventional test methods. In this work, we present a metric based on probabilistic analysis to detect delay defects induced by resistive opens that occur on signal line TSVs. Our experimental result will show the accuracy of the proposed metric.","PeriodicalId":118063,"journal":{"name":"2013 18th IEEE European Test Symposium (ETS)","volume":"330 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121584969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
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