计算信号线tsvs中延迟缺陷的检测概率

C. Metzler, A. Todri, A. Bosio, L. Dilillo, P. Girard, A. Virazel, P. Vivet, M. Belleville
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引用次数: 17

摘要

三维堆叠技术有望通过通过硅孔(tsv)垂直连接电路层来解决互连瓶颈问题。然而,制造步骤可能导致部分破损或未完全填充的TSV,这可能会降低性能并缩短3D IC的使用寿命。由于开关活动、电源噪声和串扰等物理因素的组合,路径延迟可能会加速或减慢,从而可能使传统测试方法无法检测到电阻打开TSV的影响。在这项工作中,我们提出了一种基于概率分析的度量来检测由信号线tsv上发生的电阻打开引起的延迟缺陷。我们的实验结果将证明所提出度量的准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Computing detection probability of delay defects in signal line tsvs
Three-dimensional stacking technology promises to solve the interconnect bottleneck problem by using Through-Silicon-Vias (TSVs) to vertically connect circuit layers. However, manufacturing steps may lead to partly broken or incompletely filled TSVs that may degrade the performance and reduce the useful lifetime of a 3D IC. Due to combinations of physical factors such as switching activity, supply noise and crosstalk, path delays can experience speed-up or slow-down that could let the effect of resistive open TSV go undetected by conventional test methods. In this work, we present a metric based on probabilistic analysis to detect delay defects induced by resistive opens that occur on signal line TSVs. Our experimental result will show the accuracy of the proposed metric.
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