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Wide Bandgap Semiconductors for Power Electronics最新文献

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Intrinsic and Extrinsic Electrically Active Point Defects in SiC 碳化硅的内在和外在电活性点缺陷
Wide Bandgap Semiconductors for Power Electronics Pub Date : 2021-10-29 DOI: 10.1002/9783527824724.ch6
U. Grossner, J. Grillenberger, J. Woerle, M. E. Bathen, J. Müting
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引用次数: 2
Special Focus on HEV and EV Applications: Activities of Automotive Industries Applying SiC Devices for Automotive Applications 特别关注混合动力汽车和电动汽车应用:汽车工业将SiC器件应用于汽车应用的活动
Wide Bandgap Semiconductors for Power Electronics Pub Date : 2021-10-29 DOI: 10.1002/9783527824724.ch16
K. Hamada, Keiji Toda, Hiromichi Nakamura, S. Yamagami, K. Tsuruta
{"title":"Special Focus on\u0000 HEV\u0000 and\u0000 EV\u0000 Applications: Activities of Automotive Industries Applying\u0000 SiC\u0000 Devices for Automotive Applications","authors":"K. Hamada, Keiji Toda, Hiromichi Nakamura, S. Yamagami, K. Tsuruta","doi":"10.1002/9783527824724.ch16","DOIUrl":"https://doi.org/10.1002/9783527824724.ch16","url":null,"abstract":"","PeriodicalId":113938,"journal":{"name":"Wide Bandgap Semiconductors for Power Electronics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121932300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diamond Wafer Technology, Epitaxial Growth, and Device Processing 金刚石晶圆技术，外延生长和器件加工
Wide Bandgap Semiconductors for Power Electronics Pub Date : 2021-10-29 DOI: 10.1002/9783527824724.ch21
H. Yamada, H. Kato, S. Ohmagari, H. Umezawa
{"title":"Diamond Wafer Technology, Epitaxial Growth, and Device Processing","authors":"H. Yamada, H. Kato, S. Ohmagari, H. Umezawa","doi":"10.1002/9783527824724.ch21","DOIUrl":"https://doi.org/10.1002/9783527824724.ch21","url":null,"abstract":"","PeriodicalId":113938,"journal":{"name":"Wide Bandgap Semiconductors for Power Electronics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128360922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gate Dielectrics for 4H‐SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H‐SiC/SiO 2 Interface 用于4H‐SiC功率开关的栅极介质:了解4H‐SiC/ sio2界面电活性点缺陷的结构和影响
Wide Bandgap Semiconductors for Power Electronics Pub Date : 2021-10-29 DOI: 10.1002/9783527824724.ch9
G. Pobegen, T. Aichinger
{"title":"Gate Dielectrics for 4H‐SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H‐SiC/SiO\u0000 2\u0000 Interface","authors":"G. Pobegen, T. Aichinger","doi":"10.1002/9783527824724.ch9","DOIUrl":"https://doi.org/10.1002/9783527824724.ch9","url":null,"abstract":"","PeriodicalId":113938,"journal":{"name":"Wide Bandgap Semiconductors for Power Electronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127974783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiC Reliability Aspects SiC可靠性方面
Wide Bandgap Semiconductors for Power Electronics Pub Date : 2021-10-29 DOI: 10.1002/9783527824724.ch14
J. Lutz, T. Basler
{"title":"SiC\u0000 Reliability Aspects","authors":"J. Lutz, T. Basler","doi":"10.1002/9783527824724.ch14","DOIUrl":"https://doi.org/10.1002/9783527824724.ch14","url":null,"abstract":"","PeriodicalId":113938,"journal":{"name":"Wide Bandgap Semiconductors for Power Electronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125315190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultra‐High‐Voltage SiC Power Device 超高压SiC电源器件
Wide Bandgap Semiconductors for Power Electronics Pub Date : 2021-10-29 DOI: 10.1002/9783527824724.ch13
Y. Yonezawa, K. Nakayama
{"title":"Ultra‐High‐Voltage\u0000 SiC\u0000 Power Device","authors":"Y. Yonezawa, K. Nakayama","doi":"10.1002/9783527824724.ch13","DOIUrl":"https://doi.org/10.1002/9783527824724.ch13","url":null,"abstract":"","PeriodicalId":113938,"journal":{"name":"Wide Bandgap Semiconductors for Power Electronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122544887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Homoepitaxial Growth of 4H‐SiC on Vicinal Substrates 邻近衬底上4H‐SiC的同外延生长
Wide Bandgap Semiconductors for Power Electronics Pub Date : 2021-10-29 DOI: 10.1002/9783527824724.ch3
B. Kallinger
{"title":"Homoepitaxial Growth of\u0000 4H‐SiC\u0000 on Vicinal Substrates","authors":"B. Kallinger","doi":"10.1002/9783527824724.ch3","DOIUrl":"https://doi.org/10.1002/9783527824724.ch3","url":null,"abstract":"","PeriodicalId":113938,"journal":{"name":"Wide Bandgap Semiconductors for Power Electronics","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124974181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dislocation Formation During Physical Vapor Transport Growth of 4 H‐SiC Crystals 4h - SiC晶体物理气相输运生长过程中的位错形成
Wide Bandgap Semiconductors for Power Electronics Pub Date : 2021-10-29 DOI: 10.1002/9783527824724.ch1
N. Ohtani
{"title":"Dislocation Formation During Physical Vapor Transport Growth of 4\u0000 H‐SiC\u0000 Crystals","authors":"N. Ohtani","doi":"10.1002/9783527824724.ch1","DOIUrl":"https://doi.org/10.1002/9783527824724.ch1","url":null,"abstract":"","PeriodicalId":113938,"journal":{"name":"Wide Bandgap Semiconductors for Power Electronics","volume":"238 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133930776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxial Graphene on Silicon Carbide as a Tailorable Metal–Semiconductor Interface 碳化硅外延石墨烯作为可定制的金属-半导体界面
Wide Bandgap Semiconductors for Power Electronics Pub Date : 2021-10-29 DOI: 10.1002/9783527824724.ch10
M. Krieger, H. B. Weber
{"title":"Epitaxial Graphene on Silicon Carbide as a Tailorable Metal–Semiconductor Interface","authors":"M. Krieger, H. B. Weber","doi":"10.1002/9783527824724.ch10","DOIUrl":"https://doi.org/10.1002/9783527824724.ch10","url":null,"abstract":"","PeriodicalId":113938,"journal":{"name":"Wide Bandgap Semiconductors for Power Electronics","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122498468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Industrial Perspective of SiC Epitaxy SiC外延的工业展望
Wide Bandgap Semiconductors for Power Electronics Pub Date : 2021-10-29 DOI: 10.1002/9783527824724.ch4
A. Burk, M. J. O'Loughlin, Denis Tsvetkov, S. Ustin
{"title":"Industrial Perspective of\u0000 SiC\u0000 Epitaxy","authors":"A. Burk, M. J. O'Loughlin, Denis Tsvetkov, S. Ustin","doi":"10.1002/9783527824724.ch4","DOIUrl":"https://doi.org/10.1002/9783527824724.ch4","url":null,"abstract":"","PeriodicalId":113938,"journal":{"name":"Wide Bandgap Semiconductors for Power Electronics","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115975408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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