{"title":"Epitaxial Graphene on Silicon Carbide as a Tailorable Metal–Semiconductor Interface","authors":"M. Krieger, H. B. Weber","doi":"10.1002/9783527824724.ch10","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":113938,"journal":{"name":"Wide Bandgap Semiconductors for Power Electronics","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Wide Bandgap Semiconductors for Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/9783527824724.ch10","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}