用于4H‐SiC功率开关的栅极介质:了解4H‐SiC/ sio2界面电活性点缺陷的结构和影响

{"title":"用于4H‐SiC功率开关的栅极介质:了解4H‐SiC/ sio2界面电活性点缺陷的结构和影响","authors":"G. Pobegen, T. Aichinger","doi":"10.1002/9783527824724.ch9","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":113938,"journal":{"name":"Wide Bandgap Semiconductors for Power Electronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gate Dielectrics for 4H‐SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H‐SiC/SiO\\n 2\\n Interface\",\"authors\":\"G. Pobegen, T. Aichinger\",\"doi\":\"10.1002/9783527824724.ch9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":113938,\"journal\":{\"name\":\"Wide Bandgap Semiconductors for Power Electronics\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Wide Bandgap Semiconductors for Power Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/9783527824724.ch9\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Wide Bandgap Semiconductors for Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/9783527824724.ch9","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}