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Gate Dielectrics for 4H‐SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H‐SiC/SiO 2 Interface

Wide Bandgap Semiconductors for Power Electronics Pub Date : 2021-10-29 DOI:10.1002/9783527824724.ch9
G. Pobegen, T. Aichinger
{"title":"Gate Dielectrics for 4H‐SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H‐SiC/SiO\n 2\n Interface","authors":"G. Pobegen, T. Aichinger","doi":"10.1002/9783527824724.ch9","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":113938,"journal":{"name":"Wide Bandgap Semiconductors for Power Electronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Wide Bandgap Semiconductors for Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/9783527824724.ch9","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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用于4H‐SiC功率开关的栅极介质:了解4H‐SiC/ sio2界面电活性点缺陷的结构和影响
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Wide Bandgap Semiconductors for Power Electronics
Wide Bandgap Semiconductors for Power Electronics
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