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2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)最新文献

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Modeling the dynamic self-heating of PCM PCM的动态自热建模
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818889
G. Marcolini, F. Giovanardi, M. Rudan, F. Buscemi, E. Piccinini, R. Brunetti, A. Cappelli
{"title":"Modeling the dynamic self-heating of PCM","authors":"G. Marcolini, F. Giovanardi, M. Rudan, F. Buscemi, E. Piccinini, R. Brunetti, A. Cappelli","doi":"10.1109/ESSDERC.2013.6818889","DOIUrl":"https://doi.org/10.1109/ESSDERC.2013.6818889","url":null,"abstract":"The dynamic scheme for extracting parameters of the phase-change memories is examined. The experimentally-observed behavior due to the heating and quenching of the material is modeled by a set of differential and algebraic equations. The method allows one to extract important design parameters of the PCM, along with their temperature dependence.","PeriodicalId":112804,"journal":{"name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122281795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Filter-less color sensor in standard CMOS technology 无滤光片彩色传感器在标准CMOS技术
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818834
Graciele Batistell, J. Sturm
{"title":"Filter-less color sensor in standard CMOS technology","authors":"Graciele Batistell, J. Sturm","doi":"10.1109/ESSDERC.2013.6818834","DOIUrl":"https://doi.org/10.1109/ESSDERC.2013.6818834","url":null,"abstract":"An integrated color detector is presented, which is implemented in a standard 130 nm CMOS technology without process modification or additional optical components like color filters. The proposed structure consists of vertically and laterally arranged photodiodes, providing color separation based on lateral carrier diffusion and wavelength-dependent absorption-depth. Three independent detector output signals with optimized spectral responsivities allows a discrimination between red, green and blue light spectral components. Linear transformation can be used to realize standardized colorimetric R, G, B or X, Y, Z color space responses. The color detector is therefore a low cost alternative solution for various color sensing applications.","PeriodicalId":112804,"journal":{"name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"7 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131437678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
On the strain induced by arsenic into silicon 砷致硅菌株的研究
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818855
S. Koffel, P. Pichler, J. Lorenz, G. Bisognin, E. Napolitani, D. Salvador
{"title":"On the strain induced by arsenic into silicon","authors":"S. Koffel, P. Pichler, J. Lorenz, G. Bisognin, E. Napolitani, D. Salvador","doi":"10.1109/ESSDERC.2013.6818855","DOIUrl":"https://doi.org/10.1109/ESSDERC.2013.6818855","url":null,"abstract":"The strain induced by substitutional arsenic into the silicon lattice was investigated experimentally. First, a combination of multiple implantations was used to obtain a flat arsenic profile in the first 150 nm of the substrate. Although a full activation of the dopants could be achieved, the EOR defects resulting from the implants were not dissolved and prevented reliable strain measurements. A single implantation was then used. Annealing conditions were carefully chosen to obtain a nearly flat arsenic profile in the first 400 nm of the substrate and to dissolve the EOR defects. Sheet resistance, TEM and RBS measurements confirmed the full activation of the samples and the dissolution of the EOR defects. HRXRD was then used to characterize the strain. The interpretation of the measurements via strain simulation indicated a lattice strain of (-1.5 ± 0.7)×10-5 associated with a lattice contraction at a concentration of 2 ×1020 cm-3. This value is significantly lower than the values reported in literature.","PeriodicalId":112804,"journal":{"name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125802782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reduction of momentum and spin relaxation rate in strained thin silicon films 应变硅薄膜中动量和自旋松弛率的降低
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818886
Dmitry Osintsev, V. Sverdlov, S. Selberherr
{"title":"Reduction of momentum and spin relaxation rate in strained thin silicon films","authors":"Dmitry Osintsev, V. Sverdlov, S. Selberherr","doi":"10.1109/ESSDERC.2013.6818886","DOIUrl":"https://doi.org/10.1109/ESSDERC.2013.6818886","url":null,"abstract":"We investigate the surface roughness and phonon induced spin and momentum relaxation in ultra-scaled SOI MOSFETs. We show that the spin-flip hot spots characterized by strong spin relaxation can be efficiently removed by applying shear strain resulting in an increase of spin lifetime by orders of magnitude. In contrast, the momentum relaxation time in ultrathin films, which is mostly determined by surface roughness scattering can be only increased by a factor of two, in agreement with strain-induced mobility enhancement data.","PeriodicalId":112804,"journal":{"name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128650218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Carbon nanotube resistors as gas sensors: Towards selective analyte detection with various metal-nanotubeinterfaces 碳纳米管电阻作为气体传感器:不同金属-纳米管界面的选择性分析物检测
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818884
H. Guérin, H. L. Poche, R. Pohle, M. Fernandez-Bolaños, J. Dijon, A. Ionescu
{"title":"Carbon nanotube resistors as gas sensors: Towards selective analyte detection with various metal-nanotubeinterfaces","authors":"H. Guérin, H. L. Poche, R. Pohle, M. Fernandez-Bolaños, J. Dijon, A. Ionescu","doi":"10.1109/ESSDERC.2013.6818884","DOIUrl":"https://doi.org/10.1109/ESSDERC.2013.6818884","url":null,"abstract":"This paper reports the fabrication of conductance-based gas sensors based on horizontal, dense carbon nanotube (CNT) arrays directly integrated between metal electrodes via a selective and directional catalytic growth process performed in-situ and at the wafer-scale. We originally propose to use a functionalization strategy focusing on the key role of the electrode-CNT junction, for increased selectivity. Devices based on CNT arrays have been fabricated using various designs and different metals: Pt, Pd and Au, to top-contact the CNT arrays so as to provide several types of metal-CNT junctions. The sensors have been exposed to low concentrations of H2 as well as NH3, toluene, ethanol and relative humidity. We demonstrate that the CNT resistors responses to gases are hardly dependent on the design, the CNT surface developed between the electrodes, but very specific to the metal-CNT interface. Therefore, we postulate that gases interact in a metal-specific way and modify the metal-CNT contact resistance of the resistors but the device sensitivity cannot simply be ascribed to the modulation of Schottky barriers as reported in literature. Since the main issue with CNT sensors is their lack of selectivity, we believe that this method provides an easy to implement strategy and shows potential for room temperature discriminative gas detection.","PeriodicalId":112804,"journal":{"name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129676429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT 在AlGaN/GaN HEMT中，TiN肖特基栅极优于传统Ni栅极改善电特性
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818830
T. Kawanago, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai
{"title":"Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT","authors":"T. Kawanago, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai","doi":"10.1109/ESSDERC.2013.6818830","DOIUrl":"https://doi.org/10.1109/ESSDERC.2013.6818830","url":null,"abstract":"Metal induced effects on electrical characteristics in AlGaN/GaN Schottky HEMT are reported. Focus is given to the collapse of drain current attributed to Schottky metal. Of particular interest for discussion is that TiN gate can suppresses the collapse of drain current compared with conventional Ni gate. Nitrogen concentrations in TiN gate are found to be correlated to the current collapse, indicating that the nitrogen vacancy is responsible for the traps in AlGaN/GaN HEMT. The reduction in a concentration gradient of nitrogen should be accomplished for preventing the formation of the traps. Because of the metal dependent collapse of the drain current, the traps are considered to be formed under the gate edge on the drain side in AlGaN layer.","PeriodicalId":112804,"journal":{"name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127072699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS 随机电报噪声分析研究HRS中基于hfo2的RRAM有源阱的特性
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818845
F. Puglisi, P. Pavan, A. Padovani, L. Larcher
{"title":"Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS","authors":"F. Puglisi, P. Pavan, A. Padovani, L. Larcher","doi":"10.1109/ESSDERC.2013.6818845","DOIUrl":"https://doi.org/10.1109/ESSDERC.2013.6818845","url":null,"abstract":"This paper presents statistical characterization of Random Telegraph Noise (RTN) in hafnium-oxide-based Resistive Random Access Memories (RRAMs) in High Resistive State (HRS). Complex RTN signals are analyzed exploiting a Factorial Hidden Markov Model (FHMM) approach, allowing to derive the statistical properties of traps responsible of the multi-level RTN measured in these devices. Noise characteristics in different reset conditions are explored to prove the existence of a direct relation between the reset voltage, the volume of the dielectric barrier created during the reset operation and the number of active traps contributing to the RTN.","PeriodicalId":112804,"journal":{"name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127192711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability 统计变异性和电荷捕获对14nm SOI FinFET SRAM电池稳定性的影响
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818862
Xingsheng Wang, B. Cheng, A. Brown, C. Millar, J. B. Kuang, S. Nassif, A. Asenov
{"title":"Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability","authors":"Xingsheng Wang, B. Cheng, A. Brown, C. Millar, J. B. Kuang, S. Nassif, A. Asenov","doi":"10.1109/ESSDERC.2013.6818862","DOIUrl":"https://doi.org/10.1109/ESSDERC.2013.6818862","url":null,"abstract":"Variability is a critical concern for the stability and yield of SRAM with minimized size. We present a study of a 14 nm node SOI FinFET SRAM cell under the influence of statistical variability and random charge trapping due to positive/negative bias temperature instability (P/NBTI). Low channel doping is believed to be one of the main advantages of FinFETs in reducing statistical variability, but fin and gate edge roughness and metal gate granularity can cause significant variability and affect SRAM stability. The noise margins are largely skewed, and read and write noise margins are decorrelated due to statistical variability. Under heavy stress conditions cell read noise margin can be degraded by 30mV on average due to charge trapping, and its 6σ-yield becomes even worse due to the enhanced variability in N/PBTI.","PeriodicalId":112804,"journal":{"name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133767898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty 将InAs TFET导通电流提升至1ma /μm以上，且无漏损
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818822
G. Beneventi, E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani
{"title":"Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty","authors":"G. Beneventi, E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani","doi":"10.1109/ESSDERC.2013.6818822","DOIUrl":"https://doi.org/10.1109/ESSDERC.2013.6818822","url":null,"abstract":"In this work, an InAs Tunnel Field-Effect-Transistor (TFET) is carefully optimized by TCAD simulations. The device is able to provide on-state currents in the mA/μm range at a reduced supply voltage of 0.5 V, while keeping the off-state currents below the ITRS specs for HP and LOP devices. Next, the designed TFET is benchmarked with respect to the ITRS specs for advanced multi-gate transistors projected to year 2020.","PeriodicalId":112804,"journal":{"name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122455028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors 氟基干刻蚀对AlGaN/GaN-on-Si高电子迁移率晶体管电学参数的影响
2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2013-09-01 DOI: 10.1109/ESSDERC.2013.6818819
D. Bisi, M. Meneghini, A. Stocco, G. Cibin, A. Pantellini, A. Nanni, C. Lanzieri, E. Zanoni, G. Meneghesso
{"title":"Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors","authors":"D. Bisi, M. Meneghini, A. Stocco, G. Cibin, A. Pantellini, A. Nanni, C. Lanzieri, E. Zanoni, G. Meneghesso","doi":"10.1109/ESSDERC.2013.6818819","DOIUrl":"https://doi.org/10.1109/ESSDERC.2013.6818819","url":null,"abstract":"The Fluorine-based dry etching process is extensively employed in the fabrication of GaN-based High Electron Mobility Transistors. This research activity aims to the identification of the SF6ICP etching process effects on the performances of depletion-mode AlGaN/GaN-on-Si HEMTs. By means of reverse-bias step-stress and time-resolved constant-stress, it has been observed (i) a short-term instability under low reverse bias conditions of both threshold voltage and gate leakage current, likely related to the permanent modification of electrical configuration of the Fluorine ions implanted within the epitaxial structure during the etching process; and (ii) that the introduction of the annealing phase mitigates the described instability.","PeriodicalId":112804,"journal":{"name":"2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130670071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
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