{"title":"A Wigner equation for the nanometer and femtosecond transport regime","authors":"M. Nedjalkov, R. Kosik, H. Kosina, S. Selberherr","doi":"10.1109/NANO.2001.966433","DOIUrl":"https://doi.org/10.1109/NANO.2001.966433","url":null,"abstract":"We present a quantum-kinetic equation which describes the transport phenomena in nanoelectronic devices. The equation can be regarded as a generalization of the Boltzmann equation, which describes the operation of the conventional microelectronic devices. The presented equation treats the coherent part of the transport imposed by the nanostructure potential on a rigorous quantum level, utilizing the Wigner picture. It is shown that the equation is general enough to account for quantum effects in the dissipative part of the transport imposed by the electron-phonon interaction. Numerical experiments demonstrate the effects of collision broadening, retardation and the intra-collisional field effect. Theoretical analysis of the equation reveals a novel quantum effect which is due to the correlation between the interaction process and the space component of the Wigner path.","PeriodicalId":111348,"journal":{"name":"Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122966648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Microcrack evaluation for electronics components by AFM nanoDAC deformation measurement","authors":"D. Vogel, B. Michel","doi":"10.1109/NANO.2001.966439","DOIUrl":"https://doi.org/10.1109/NANO.2001.966439","url":null,"abstract":"The authors present a new approach to measure displacement and in-plane strain fields utilizing AFM micrographs. The micrographs are captured for different load states of the scanned object. Locally applied correlation algorithms are used to track image pattern and to obtain incremental displacement values. The method has been utilized for microcrack detection and determination of fracture mechanics parameters. A possible procedure to measure stress intensity factors from crack opening displacements nearby the crack tip is demonstrated. It is forseen to use this technique for microcrack and defect evaluation in semiconductor and electronic packaging components.","PeriodicalId":111348,"journal":{"name":"Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132687989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Evaluation of performance and perspectives of nanocrystal flash memories based on 3D quantum modeling","authors":"P. Coli, G. Iannaccone","doi":"10.1109/NANO.2001.966408","DOIUrl":"https://doi.org/10.1109/NANO.2001.966408","url":null,"abstract":"In this paper we evaluate, from a quantitative point of view, the electrical properties of nanocrystal flash memories, in which the floating gate of conventional flash-EEPROMs is replaced with a layer of silicon nanocrystals. We have developed a three-dimensional solver of the Poisson-Schrodinger equation based on density functional theory, with the local density approximation. In this paper we focus on the stationary electric behavior of the memory devices, focusing on the effect of nanocrystal size and density, and providing a first estimate of the effect of randomness in the nanocrystal layer.","PeriodicalId":111348,"journal":{"name":"Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123542950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nanotechnology circuit design - the \"interconnect problem\"","authors":"A. Goel","doi":"10.1109/NANO.2001.966405","DOIUrl":"https://doi.org/10.1109/NANO.2001.966405","url":null,"abstract":"Proposed a modified metallic interconnect as a possible solution of the so-called \"interconnect problem\" in reference to a nanotechnology circuit where an extremely high density of devices in the circuit requires a very large number of very high-speed interconnects. This can result in high crosstalk introduced by the very close proximity of the rather large number of interconnects in addition to the excessive heating problem caused by very high current densities in the interconnect lines which can further lead to failure of the interconnects due to the phenomenon called electromigration. Rather than a usual single-path interconnect, the modified interconnect consists of two or more paths between the driver and the load. These paths are stacked vertically isolated from one another by insulating layers between them thereby taking the same area on the chip as a single-path interconnect. Using a ladder network approximation for the interconnect, we carried out a first-order analysis of the propagation delays in a multipath interconnect. We also determined approximately the electromigration-induced MTF of such a multi-path inter-connect structure.","PeriodicalId":111348,"journal":{"name":"Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129348386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Symmetric versus asymmetric charge neutralization in quantum-dot cellular automata","authors":"J. Lusth","doi":"10.1109/NANO.2001.966452","DOIUrl":"https://doi.org/10.1109/NANO.2001.966452","url":null,"abstract":"Quantum-dot cellular automata (QCA), a method for computing through energy relaxation via quantum mechanical effects, promise high speed, very low power, and extremely high density. The first steps in implementing QCA have been taken; a small device has recently been manufactured and is logical switching behavior demonstrated. This paper investigates the behaviors of some proposed QCA primitives: wires, crossings, corners, and logic gates, under two charge neutralization schemes. While these primitives work well under the originally proposed charge neutralization scheme, it is shown that with a more realistic scheme, most of the primitives can fail outright, show a preference for a undesirable logical state, or show a decrease in the energy gap between the ground state and other excited states. Redesigned primitives are presented which may perform as well, or better, under either neutralization scheme.","PeriodicalId":111348,"journal":{"name":"Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130972624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
O. Voskoboynikov, Huaqing Huang, C.P. Lee, O. Tretyak
{"title":"Spin-orbit interaction and spin-dependent electron scattering in 2D channels","authors":"O. Voskoboynikov, Huaqing Huang, C.P. Lee, O. Tretyak","doi":"10.1109/NANO.2001.966394","DOIUrl":"https://doi.org/10.1109/NANO.2001.966394","url":null,"abstract":"In this theoretical study to model spin-dependent scattering in two-dimensional channels, we consider a type of scatterers: quantum dots (antidots) located in two-dimensional channels of III-V semiconductors. General theoretical approach to the description of the spin-orbit coupling effect in the scattering is to use the spin-orbit contribution to the Hamiltonian. We calculate the differential cross section with energy and angular dependence and find a large left-right asymmetry. Our theory predicts that the asymmetry can reach /spl sim/10% for back-scattered electrons in the case when the electrons are scattered from two-dimensional quantum antidots.","PeriodicalId":111348,"journal":{"name":"Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122120721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Non-equilibrium carriers and recombination phenomena in type-II quantum dots","authors":"A. Shik, H. Ruda, E. Sargent","doi":"10.1109/NANO.2001.966453","DOIUrl":"https://doi.org/10.1109/NANO.2001.966453","url":null,"abstract":"In the present work we study the key parameters of a type-II quantum dot (QD), namely, the QD charge Q and the band bending V/sub 0/, their evolution with optical excitation and light-induced non-equilibrium properties of the system.","PeriodicalId":111348,"journal":{"name":"Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126054357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effect of /spl gamma/-radiation on the conduction mechanism of thermal vacuum deposited copper phthalocyanine thin films","authors":"A. Arshak, S. Zleetni, K. Arshak, J. Harris","doi":"10.1109/NANO.2001.966426","DOIUrl":"https://doi.org/10.1109/NANO.2001.966426","url":null,"abstract":"The dosimetry properties of thermally evaporated Copper Phthalocyanine (CuPc) thin films were investigated. The conduction mechanism of the as-deposited films was found to be space-charge-limited and their relative permittivity was within the range reported by others. The Poole-Frenkel effect became more dominant for the irradiated samples and they displayed large increase in permittivity and colour centre density, although the energies of their optical band gap and trapping levels did not change. The observed linear relationship between the absorbance at 615 nm and the /spl gamma/-radiation doses validated the use of CuPc as an optical sensor dosimeter especially for low radiation doses. Samples showed a higher radiation tolerance after being annealed for one hour at a temperature of only 323 K. Annealing also restored their initial electrical and optical properties.","PeriodicalId":111348,"journal":{"name":"Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126824402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Kalantar-zadeh, A. Trinchi, W. Wlodarski, A. Holland, M. Atashbar
{"title":"A novel Love mode device with nanocrystalline ZnO film for gas sensing applications","authors":"K. Kalantar-zadeh, A. Trinchi, W. Wlodarski, A. Holland, M. Atashbar","doi":"10.1109/NANO.2001.966484","DOIUrl":"https://doi.org/10.1109/NANO.2001.966484","url":null,"abstract":"A novel surface acoustic wave (SAW) gas sensor is presented. The sensor is based on a ZnO (2.8 /spl mu/m)/90/spl deg/ rotated ST-cut quartz crystal structure. Such a structure allows the propagation of Love mode SAWs. The ZnO layer performs as both the acoustic wave guiding media and the gas sensitive film. The response of the sensor was investigated for different concentrations of O/sub 2/ and 100ppm C/sub 3/H/sub 8/ in N/sub 2/ gas. The sensor is highly stable due to the large electromechanical coupling coefficient of the device, and is able to detect oxygen concentrations as low as 1 ppm in nitrogen gas.","PeriodicalId":111348,"journal":{"name":"Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114402696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yaohui Zhang, Ruigang Li, Sungkwon Hong, K.L. Wang, B. Nguyen, K. Joardar, D. Pham, W. Yao
{"title":"Nano-scale Recessed Asymmetric Schottky Contacted CMOS","authors":"Yaohui Zhang, Ruigang Li, Sungkwon Hong, K.L. Wang, B. Nguyen, K. Joardar, D. Pham, W. Yao","doi":"10.1109/NANO.2001.966418","DOIUrl":"https://doi.org/10.1109/NANO.2001.966418","url":null,"abstract":"A new CMOS device architecture named as Recessed Asymmetric Schottky Contacted CMOS ( RASC-CMOS) has been proposed and simulated by using commercial version device simulator DESSIS 6.1. RASC-CMOS can eliminate the two critical drawbacks of conventional Schottky contacted CMOS (SC-CMOS): 1) unacceptable off-state current (>10 nA//spl mu/m), 2) strong short-channel effects when the feature size of SC-CMOS scaled down to 10 nm. In the meantime, RASC-CM0S has kept the advantage of with extremely simplified fabrication process of SC-CMOS.","PeriodicalId":111348,"journal":{"name":"Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)","volume":"31 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120818288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}