Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)最新文献

Nearfield optics with solid immersion lenses and sharp metal probes 近场光学与固体浸没镜头和尖锐的金属探头

Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516) Pub Date : 2001-10-28 DOI: 10.1109/NANO.2001.966474

K. Crozier, A. Sundaramurthy, D. A. Fletcher, G. Kino, C. Quate

{"title":"Nearfield optics with solid immersion lenses and sharp metal probes","authors":"K. Crozier, A. Sundaramurthy, D. A. Fletcher, G. Kino, C. Quate","doi":"10.1109/NANO.2001.966474","DOIUrl":"https://doi.org/10.1109/NANO.2001.966474","url":null,"abstract":"We discuss two methods for achieving optical resolution beyond the diffraction limit in air. The first method, the solid immersion lens (SIL), improves optical resolution by increasing the numerical aperture (NA) beyond 1.0, the usual limit in air, to a maximum of n, the refractive index of the SIL. We present experimental results with a scanning optical microscope (/spl lambda/=400 nm) based on a micromachined silicon nitride SIL that demonstrates optical resolution /spl sim/1.9 times better with the SIL than without. Specifically, the microfabricated silicon nitride SIL improves the optical edge response from /spl sim/190 nm to /spl sim/100 nm. The second method for improving resolution is based on the strongly enhanced electric field at the surface of a nanoparticle illuminated with light whose wavelength corresponds to the particle's plasmon resonance. We present finite difference time domain (FDTD) calculations showing that the electric field intensity at the sharp apex of a triangular nanoparticle is enhanced by more than two orders of magnitude over the incident intensity in a very small region (< 10 nm).","PeriodicalId":111348,"journal":{"name":"Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117277381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Logic devices for partitioned quantum-dot cells 分块量子点单元的逻辑器件

Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516) Pub Date : 2001-10-28 DOI: 10.1109/NANO.2001.966451

D. P. Kelly, J. Lusth

引用次数: 1

Characteristics of dendrimer functionalized with azobenzene for the application to nano-level photo-switching device 偶氮苯功能化树状大分子在纳米级光开关器件中的应用

Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516) Pub Date : 2001-10-28 DOI: 10.1109/NANO.2001.966416

Jm Kim, J. Son, H. Yoon, J.-Y. Seo, Seung-Yeop Yoo, H. Shin, Eunmi Park, J. Kim, Yongbeom Kwon

{"title":"Characteristics of dendrimer functionalized with azobenzene for the application to nano-level photo-switching device","authors":"Jm Kim, J. Son, H. Yoon, J.-Y. Seo, Seung-Yeop Yoo, H. Shin, Eunmi Park, J. Kim, Yongbeom Kwon","doi":"10.1109/NANO.2001.966416","DOIUrl":"https://doi.org/10.1109/NANO.2001.966416","url":null,"abstract":"If we can make characterization of nano-structure with functionality, the molecular level device will be obtained. The dendrimer has been well known as a promising macromolecules for a building the organized nanostructure, which of the size can be controlled and which of periphery can be terminated by various functionalities. In this study, we synthesized dendrimers containing light switchable units, azobenzene group. Their chemical structure was verified by using NMR study and UV spectroscopy. To apply to the molecular level switching device or data storage system using Langmuir-Blodgett(LB) film, we firstly investigated the monolayer behavior using /spl pi/-A isotherm at air/water interface. And then the surface pressure shift of monolayer by light irradiation was also measured. As a result, the monolayer of dendrimer with azobenzene group showed the reversible photo-switching behavior by the isomerization of azobenzene group in their periphery. This result strongly suggests that a dendrimer with azobenzene group can be applied to high efficient photo-switching device of molecular level.","PeriodicalId":111348,"journal":{"name":"Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)","volume":"186 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122051938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical transmission/fluorescence reaction and features in ultra-thin dye films by scanning near-field optical/atomic force microscopes (SNOM/AFM) 扫描近场光学/原子力显微镜(SNOM/AFM)研究超薄染料薄膜的光透射/荧光反应及其特征

Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516) Pub Date : 2001-10-28 DOI: 10.1109/NANO.2001.966437

H. Shin, S. Chang, Jm Kim, H. Muramatsu, Y. Kwon

引用次数: 0

The atomic fabrication of a silicon based quantum computer 硅基量子计算机的原子制造

Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516) Pub Date : 2001-10-28 DOI: 10.1109/NANO.2001.966469

M. Simmons, S. R. Schofield, J. O'Brien, N. Curson, R. G. Clark, T. M. Buehler, R. P. McKinnon, R. Brenner, D. Reilly, A. Dzurak, A. Hamilton

引用次数: 0

Nanolevel structuring - the way to the designing of novel functional solids and materials 纳米结构——设计新型功能固体和材料的途径

Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516) Pub Date : 2001-10-28 DOI: 10.1109/NANO.2001.966457

V. Smirnov, V. B. Aleskovskii

引用次数: 1

Magnetic nanocomposite materials for high temperature applications 磁性纳米复合材料的高温应用

Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516) Pub Date : 2001-10-28 DOI: 10.1109/NANO.2001.966382

F. Johnson, A. Hsaio, C. Ashe, D. Laughlin, D. Lambeth, M. McHenry, L. Varga

{"title":"Magnetic nanocomposite materials for high temperature applications","authors":"F. Johnson, A. Hsaio, C. Ashe, D. Laughlin, D. Lambeth, M. McHenry, L. Varga","doi":"10.1109/NANO.2001.966382","DOIUrl":"https://doi.org/10.1109/NANO.2001.966382","url":null,"abstract":"Magnetic nanocomposites comprised of nano-sized magnetic crystals embedded in an amorphous matrix have been shown to have excellent soft magnetic properties. In particular, amorphous and nanocrystalline materials have been investigated for various soft magnetic applications including transformers and inductive devices. The historical development of nanocomposite soft magnetic materials will be reviewed. In these materials it has been determined that an important averaging of the magnetocrystalline anisotropy over many grains coupled within an exchange length is at the root of the magnetic softness of these materials. The crystallization kinetics and the chemical partitioning occurring during crystallization will be described. In particular, the role of the amorphous phase in exchange coupling magnetic nanoparticles at elevated temperatures will be discussed. In HITPERM nanocomposites, developed by our group, nanocrystalline /spl alpha/ and /spl alpha/\"(B2)-FeCo are formed with significantly improved high temperature magnetic properties than in it's predecessors, NANOPERM and FINEMET. HITPERM has been developed for applications with high permeability requirements and with needs for large inductions at high temperatures. Recent work in characterizing the performance of HITPERM magnetic nanocomposite systems will be described. Specifically we have developed soft magnetic alloys that exhibit high magnetic induction at temperatures above current operating ranges for commercial devices. The applications for this material in high frequency (up to 1MHz) inductive devices for high temperature power electronics will be reviewed.","PeriodicalId":111348,"journal":{"name":"Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134039693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Optimization of KOH wet etching process in silicon nanofabrication 硅纳米加工中KOH湿法蚀刻工艺的优化

Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516) Pub Date : 2001-10-28 DOI: 10.1109/NANO.2001.966421

J. Sheu, K. You, C.H. Wu, K. Chang

{"title":"Optimization of KOH wet etching process in silicon nanofabrication","authors":"J. Sheu, K. You, C.H. Wu, K. Chang","doi":"10.1109/NANO.2001.966421","DOIUrl":"https://doi.org/10.1109/NANO.2001.966421","url":null,"abstract":"The simple wet etching process for nanostructure formation seems straightforward. But, how far the wet etching process can be pushed so that it is applicable in silicon nanodevices and silicon nanostructure applications. In terms of surface roughness and achievable feature size, the impact of aqueous KOH wet etching temperature was studied for nanostructure formation with [110] silicon wafer. The grid-line patterns are generated by scanning probe lithography (SPL), which applied a bias between the tip and the [110]-oriented silicon wafer that results in an oxide hard mask for subsequent orientation-dependent etching (ODE) process. The etching rate is theoretically proportional to temperature the higher the temperature the higher the etching rate, whilst the surface roughness and the nanostructures morphology deteriorated. Owing to the etching selectivity of [111]-plane/oxide decreases as the etching temperature increases, it is found that the line-width of 20 nm nanostructure can be formed at 50/spl deg/C but with poor surface roughness morphology. For the same etching depth, when the temperature changes from 50/spl deg/C to 30/spl deg/C the linewidth of nanostructure increases from 29 nm up to 67 nm, but surface roughness decreases from 32 nm to 3.8 nm. It is also found that the additional agitation by ultrasonic cleaner can speed up mass transfer of chemical reactants on surface of [110]-plane such that the surface roughness and morphology are further improved. We have demonstrated that: First, the optimization linewidth of the silicon nanofabrication can be reduced down to 20 nm by using higher aqueous temperature than 30/spl deg/C and ODE technique with ultrasonic agitation. Second, the surface roughness of the wet etching with ultrasonic agitation is 3.282 nm which is comparable to that of dry etching (Rq = 2.101 nm) at the temperature 30/spl deg/C.","PeriodicalId":111348,"journal":{"name":"Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133342403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Digital to analog conversion performed in single electron technology 在单电子技术中进行数模转换

Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516) Pub Date : 2001-10-28 DOI: 10.1109/NANO.2001.966402

C. Lageweg, S. Cotofana, S. Vassiliadis

引用次数: 19

Nano domain engineering using scanning nonlinear dielectric microscopy 扫描非线性介电显微镜的纳米畴工程

Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516) Pub Date : 2001-10-28 DOI: 10.1109/NANO.2001.966447

Y. Cho, K. Matsuura, S. Kazuta, H. Odagawa, K. Terabe, K. Kitarnura

引用次数: 1