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Fantastic Photons and Where to Excite Them: Revolutionizing Upconversion with KY3F10-Based Compounds 神奇的光子和激发它们的地方：利用基于 KY3F10 的化合物实现革命性的上转换
IF 2.7 4区 材料科学
Crystals Pub Date : 2024-08-27 DOI: 10.3390/cryst14090762
Pablo Serna-Gallén
{"title":"Fantastic Photons and Where to Excite Them: Revolutionizing Upconversion with KY3F10-Based Compounds","authors":"Pablo Serna-Gallén","doi":"10.3390/cryst14090762","DOIUrl":"https://doi.org/10.3390/cryst14090762","url":null,"abstract":"This review delves into the forefront of upconversion luminescence (UCL) research, focusing on KY3F10-based compounds, particularly their cubic α-phase. These materials are renowned for their exceptional luminescent properties and structural stability, making them prime candidates for advanced photonic applications. The synthesis methods and structural characteristics of the existing works in the literature are meticulously analyzed alongside the transformative effects of various doping strategies on UCL efficiency. Incorporating rare earth (RE) sensitizer ions such as Yb3+, along with activator ions like Er3+, Ho3+, Nd3+, or Tm3+, researchers have achieved remarkable enhancements in emission intensity and spectral control. Recent and past breakthroughs in understanding the local structure and phase transitions of single-, double-, and triple-RE3+-doped KY3F10 nanocrystals are highlighted, revealing their pivotal role in fine-tuning luminescent properties. Furthermore, the review underscores the untapped potential of lesser-known crystal structures, such as the metastable δ-phase of KY3F10, which offers promising avenues for future exploration. By presenting a comprehensive analysis and proposing innovative research directions, this review aims to inspire continued advancements in the field of upconversion materials, unlocking new potentials in photonic technologies.","PeriodicalId":10855,"journal":{"name":"Crystals","volume":"511 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142202539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties and Applications of Supersaturated Metastable Alloys Obtained via Electrodeposition 通过电沉积获得的过饱和可锻合金的特性与应用
IF 2.7 4区 材料科学
Crystals Pub Date : 2024-08-27 DOI: 10.3390/cryst14090761
Roberto Bernasconi, Luca Nobili, Luca Magagnin
{"title":"Properties and Applications of Supersaturated Metastable Alloys Obtained via Electrodeposition","authors":"Roberto Bernasconi, Luca Nobili, Luca Magagnin","doi":"10.3390/cryst14090761","DOIUrl":"https://doi.org/10.3390/cryst14090761","url":null,"abstract":"Supersaturated alloys can exhibit superior properties and electrodeposition is a cost-effective and versatile technique to produce them. In this review, the chemical, mechanical and structural properties of supersaturated alloys are discussed, and connections with metallic glasses and high entropy alloys are also exposed. After discussing mechanisms causing supersaturation in electrodeposited alloys, an overview of the most important electrodeposited metastable alloys is provided, showing that they are mainly used as protective coatings able to improve corrosion resistance and tribological performance of a large variety of industrial components. Composition of the electrolytic baths and deposition parameters are also considered and discussed.","PeriodicalId":10855,"journal":{"name":"Crystals","volume":"1 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142202538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of Chromium Cations in CrAPO-5 Metal Aluminophosphate CrAPO-5 金属铝磷酸盐中铬阳离子的表征
IF 2.7 4区 材料科学
Crystals Pub Date : 2024-08-26 DOI: 10.3390/cryst14090758
Sergei A. Zubkov, Elena D. Finashina, Valery N. Zakharov, Leonid Kustov
{"title":"Characterization of Chromium Cations in CrAPO-5 Metal Aluminophosphate","authors":"Sergei A. Zubkov, Elena D. Finashina, Valery N. Zakharov, Leonid Kustov","doi":"10.3390/cryst14090758","DOIUrl":"https://doi.org/10.3390/cryst14090758","url":null,"abstract":"Chromium-substituted aluminophosphate (CrAPO-5) with the AFI crystal structure was prepared for the first time by using microwave conditions at the stage of gel formation and crystallization. This approach allowed the reduction of the time required for the synthesis of CrAPO-5 from 60–70 h to 6 h. CrAPO-5 metal aluminophosphate prepared by microwave-assisted synthesis is studied by UV-visible and IR spectroscopy and X-ray photoelectron spectroscopy. The material is characterized by the presence of Cr3+ and Cr2+ ions in the framework with predominating Cr3+ ions introduced via isomorphous substitution, as well as some minor amounts of extra-framework Cr3+ species, which are present presumably in the state of α-Cr2O3. The latter species can be partially reduced to Cr2+ species in the presence of CO or H2. XPS study of CrAPO-5 revealed the presence of Cr3+ ions in the framework. A TPR experiment showed that the reduction of chromium starts at about 450–500 °C.","PeriodicalId":10855,"journal":{"name":"Crystals","volume":"23 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142202542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LiNbO3:Ho3+ Crystal as a Material for Radiation-Balanced Lasing in the 640–670 nm Region 作为 640-670 纳米波段辐射平衡激光材料的 LiNbO3:Ho3+ 晶体
IF 2.7 4区 材料科学
Crystals Pub Date : 2024-08-26 DOI: 10.3390/cryst14090760
Gagik Demirkhanyan, Narine Babajanyan, Frida Voskanyan, Ninel Kokanyan, Marco Bazzan, Edvard Kokanyan
{"title":"LiNbO3:Ho3+ Crystal as a Material for Radiation-Balanced Lasing in the 640–670 nm Region","authors":"Gagik Demirkhanyan, Narine Babajanyan, Frida Voskanyan, Ninel Kokanyan, Marco Bazzan, Edvard Kokanyan","doi":"10.3390/cryst14090760","DOIUrl":"https://doi.org/10.3390/cryst14090760","url":null,"abstract":"Holmium-doped congruent-composition lithium niobate (LiNbO3:Ho, LN:Ho) crystals were grown by the Czochralski method. The absorption of the LN:1at% Ho3+ crystal was recorded at room temperature. On the basis of the analysis of emission and absorption spectra of the LN:1at% Ho3+ crystal, the possibilities of obtaining, at room temperature, radiation-balanced (RB) lasing in the region of 640–670 nm wavelengths corresponding to the inter-Stark transitions of manifolds 5F5 and 5I8 was theoretically investigated. The RB lasing parameters were calculated and the optimal pump and laser wavelengths were determined: λOP=652.1 nm, λOL=653.6 nm. The values for the RB lasing efficiency and radiation amplification in the considered wavelength region were obtained: Feff=3.23×10−22cm2, Fgain=6.08×10−22 cm2.","PeriodicalId":10855,"journal":{"name":"Crystals","volume":"105 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142202548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Lattice Misfit on the Stability of the Misfit Layer Compound (SnS)1+xNbS2 晶格错位对错位层化合物 (SnS)1+xNbS2 稳定性的影响
IF 2.7 4区 材料科学
Crystals Pub Date : 2024-08-26 DOI: 10.3390/cryst14090756
Changming Fang
{"title":"Effect of Lattice Misfit on the Stability of the Misfit Layer Compound (SnS)1+xNbS2","authors":"Changming Fang","doi":"10.3390/cryst14090756","DOIUrl":"https://doi.org/10.3390/cryst14090756","url":null,"abstract":"The prototype misfit layer compound (SnS)1.17NbS2 consists alternatingly of a metallic triatomic NbS2 layer, in which Nb atoms are sandwiched by S atoms, and an insulating SnS double layer featuring a NaCl-type structure. Here we investigate the effect of lattice misfit on the stability and chemical bonding in the misfit layer compound using a first-principles density functional theory approach. The calculations show that for the (SnS)1+xNbS2 approximants, the most stable one has x = 0.167, close to the experimental observations. Charge analysis finds a moderate charge transfer from SnS to NbS2. Sn or S vacancies in the SnS part affect the electronic properties and interlayer interactions. The obtained information here helps in understanding the mechanism of formation and stability of misfit layer compounds and ferecrystals and further contributes to the design of novel multilayer compounds and emerging van der Waals heterostructures.","PeriodicalId":10855,"journal":{"name":"Crystals","volume":"7 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142202540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Nested Topological Band-Gap Structure for the Periodic Domain Walls in a Photonic Super-Lattice 光子超晶格中周期性畴壁的嵌套拓扑带隙结构
IF 2.7 4区 材料科学
Crystals Pub Date : 2024-08-26 DOI: 10.3390/cryst14090757
Zhen Lai, Yufu Liu, Yunlin Li, Xuezhi Wang, Xunya Jiang
{"title":"The Nested Topological Band-Gap Structure for the Periodic Domain Walls in a Photonic Super-Lattice","authors":"Zhen Lai, Yufu Liu, Yunlin Li, Xuezhi Wang, Xunya Jiang","doi":"10.3390/cryst14090757","DOIUrl":"https://doi.org/10.3390/cryst14090757","url":null,"abstract":"We study the nested topological band-gap structure of one-dimensional (1D) photonic super-lattices. One cell of the super-lattice is composed of two kinds of photonic crystals (PhCs) with different topologies so that there is a domain wall (DW) state at the interface between the two PhCs. We find that the coupling of periodic DWs could form a new band-gap structure inside the original gap. The new band-gap structure could be topologically nontrivial, and a topological phase transition can occur if the structural or material parameters of the PhCs are tuned. Theoretically, we prove that the Hamiltonian of such coupled DWs can be reduced to the simple Su–Schrieffer–Heeger (SSH) model. Then, if two super-lattices carrying different topological phases are attached, a new topological interface state can occur at the interface between the two super-lattices. Finally, we find the nested topological band-gap structure in two-dimensional (2D) photonic super-lattices. Consequently, such nested topological structures can widely exist in complex super-lattices. Our work improves the topological study of photonic super-lattices and provides a new way to realize topological interface states and topological phase transitions in 1D and 2D photonic super-lattices. Topological interface states in super-lattices are sensitive to frequency and have high accuracy, which is desired for high-performance filters and high-finesse cavities.","PeriodicalId":10855,"journal":{"name":"Crystals","volume":"8 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142202541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface Modification of Chromium–Nickel Steel by Electrolytic Plasma Nitriding Method 电解等离子氮化法对铬镍钢进行表面改性
IF 2.7 4区 材料科学
Crystals Pub Date : 2024-08-26 DOI: 10.3390/cryst14090759
Zarina Satbayeva, Bauyrzhan Rakhadilov, Zhangabay Turar, Nurbol Berdimuratov, Daryn Baizhan, Almasbek Maulit
{"title":"Surface Modification of Chromium–Nickel Steel by Electrolytic Plasma Nitriding Method","authors":"Zarina Satbayeva, Bauyrzhan Rakhadilov, Zhangabay Turar, Nurbol Berdimuratov, Daryn Baizhan, Almasbek Maulit","doi":"10.3390/cryst14090759","DOIUrl":"https://doi.org/10.3390/cryst14090759","url":null,"abstract":"Electrolytic plasma nitriding is an attractive chemical heat treatment used to improve the surface properties of steel by implementing nitrogen saturation. This method is widely applied to steel and iron-based alloys operating under various operating conditions. In this work, using liquid-phase plasma nitriding technology, a nitrided layer was obtained on the surface of 40CrNi steel in electrolytes of different concentrations. The microstructure and phase composition of the nitrided layer were investigated and analyzed using scanning electron microscopy (SEM) and X-ray diffraction (XRD), and we performed Vickers hardness and wear resistance tests using the ball-on-disc method. The microhardness and wear resistance of nitrided 40CrNi steel were significantly improved due to the lubricating properties of the ε-Fe2N phase formed on its surface.","PeriodicalId":10855,"journal":{"name":"Crystals","volume":"11 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142202543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Screening, Growing, and Validation by Catalog: Using Synthetic Intermediates from Natural Product Libraries to Discover Fragments for an Aspartic Protease Through Crystallography 通过目录进行筛选、生长和验证：利用天然产物库中的合成中间体，通过晶体学发现天冬氨酸蛋白酶的片段
IF 2.7 4区 材料科学
Crystals Pub Date : 2024-08-25 DOI: 10.3390/cryst14090755
Franziska U. Huschmann, Janis Mueller, Alexander Metz, Moritz Ruf, Johanna Senst, Serghei Glinca, Johannes Schiebel, Andreas Heine, Gerhard Klebe
{"title":"Screening, Growing, and Validation by Catalog: Using Synthetic Intermediates from Natural Product Libraries to Discover Fragments for an Aspartic Protease Through Crystallography","authors":"Franziska U. Huschmann, Janis Mueller, Alexander Metz, Moritz Ruf, Johanna Senst, Serghei Glinca, Johannes Schiebel, Andreas Heine, Gerhard Klebe","doi":"10.3390/cryst14090755","DOIUrl":"https://doi.org/10.3390/cryst14090755","url":null,"abstract":"Fragment screening directly on protein crystals has been applied using AnalytiCon’s collection of intermediates that have been utilized to generate libraries of larger synthetic natural product-like molecules. The fragments with well-balanced physicochemical properties show an impressively high hit rate for a screen using the aspartic protease endothiapepsin. The subsequent validation and expansion of the discovered fragment hits benefits from AnalytiCon’s comprehensive library design. Since the screened fragments are intermediates that share a common core with larger and closely related analogs with modulated substitution patterns, they allow for the retrieval of off-the-shelf follow-up compounds, which enable the development of design strategies for fragment optimization. A promising bicyclic core scaffold found in several fragment hits could be validated by selecting a set of enlarged follow-up compounds. Due to unexpected changes in binding mode and no significant improvement in ligand efficiency, this series was quickly deemed unsuitable and therefore discontinued. The structures of follow-up compounds of two other fragments helped to evaluate a putative fusion of two overlapping fragment hits. A design concept on how to fuse the two fragments could be proposed and helps to plan a suitable substitution pattern and promising central bridging element.","PeriodicalId":10855,"journal":{"name":"Crystals","volume":"28 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142202545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Crystal Structure and Microwave Dielectric Characteristics of Novel Ba(Eu1/5Sm1/5Nd1/5Pr1/5La1/5)2Ti4O12 High-Entropy Ceramic 新型 Ba(Eu1/5Sm1/5Nd1/5Pr1/5La1/5)2Ti4O12 高熵陶瓷的晶体结构和微波介电特性
IF 2.7 4区 材料科学
Crystals Pub Date : 2024-08-25 DOI: 10.3390/cryst14090754
Qing Wan, Zeping Li, Huifeng Wang, Gang Xiong, Geng Wang
{"title":"Crystal Structure and Microwave Dielectric Characteristics of Novel Ba(Eu1/5Sm1/5Nd1/5Pr1/5La1/5)2Ti4O12 High-Entropy Ceramic","authors":"Qing Wan, Zeping Li, Huifeng Wang, Gang Xiong, Geng Wang","doi":"10.3390/cryst14090754","DOIUrl":"https://doi.org/10.3390/cryst14090754","url":null,"abstract":"High-permittivity Ba(Eu1/5Sm1/5Nd1/5Pr1/5La1/5)2Ti4O12 (BESNPLT) high-entropy ceramics (HECs) were synthesized via a solid-state route. The microstructure, sintering behavior, phase structure, vibration modes, and microwave dielectric characteristics of the BESNPLT HECs were thoroughly investigated. The phase structure of the BESNPLT HECs was confirmed to be a single-phase orthorhombic tungsten-bronze-type structure of Pnma space group. Permittivity (εr) was primarily influenced by polarizability and relative density. The quality factor (Q×f) exhibited a significant correlation with packing fraction, whereas the temperature coefficient (TCF) of the BESNPLT HECs closely depended on the tolerance factor and bond valence of B-site. The BESNPLT HECs sintered at 1400 °C, demonstrating high relative density (>97%) and optimum microwave dielectric characteristics with TCF = +38.9 ppm/°C, Q×f = 8069 GHz (@6.1 GHz), and εr = 87.26. This study indicates that high-entropy strategy was an efficient route in modifying the dielectric characteristics of tungsten-bronze-type microwave ceramics.","PeriodicalId":10855,"journal":{"name":"Crystals","volume":"234 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142202386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic Properties of Atomic Layer Deposited HfO2 Thin Films on InGaAs Compared to HfO2/GaAs Semiconductors 与 HfO2/GaAs 半导体相比，InGaAs 上原子层沉积 HfO2 薄膜的电子特性
IF 2.7 4区 材料科学
Crystals Pub Date : 2024-08-25 DOI: 10.3390/cryst14090753
Irving K. Cashwell, Donovan A. Thomas, Jonathan R. Skuza, Aswini K. Pradhan
{"title":"Electronic Properties of Atomic Layer Deposited HfO2 Thin Films on InGaAs Compared to HfO2/GaAs Semiconductors","authors":"Irving K. Cashwell, Donovan A. Thomas, Jonathan R. Skuza, Aswini K. Pradhan","doi":"10.3390/cryst14090753","DOIUrl":"https://doi.org/10.3390/cryst14090753","url":null,"abstract":"This paper demonstrates how the treatment of III-V semiconductor surface affects the number of defects and ensures the conformal growth of the high-k dielectric thin film. We present the electrical properties of an HfO2/InGaAs-based MOS capacitor, in which growth temperatures and surface treatments of the substrate are two key factors that contribute to the uniformity and composition of the HfO2 thin films. A remarkable asymmetry observed in capacitance versus voltage measurements was linked to the interface defects and charge redistribution, as confirmed from X-ray photoelectron spectroscopy. The GaAs substrates that were etched with only NH4OH showed a large frequency dispersion and a higher surface roughness; however, the HfO2 thin films grown on GaAs pre-treated with both NH4OH etching and (NH4)2S passivation steps produced a desirable surface and superior electronic properties.","PeriodicalId":10855,"journal":{"name":"Crystals","volume":"12 1","pages":""},"PeriodicalIF":2.7,"publicationDate":"2024-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142202544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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