Crystal Engineering最新文献

筛选
英文 中文
‘A’ cation control of perovskite properties 钙钛矿性质的“A”阳离子控制
Crystal Engineering Pub Date : 2002-09-01 DOI: 10.1016/S1463-0184(02)00054-0
J.P. Attfield
{"title":"‘A’ cation control of perovskite properties","authors":"J.P. Attfield","doi":"10.1016/S1463-0184(02)00054-0","DOIUrl":"10.1016/S1463-0184(02)00054-0","url":null,"abstract":"<div><p>The materials properties of many ABO<sub>3</sub><span><span> perovskites result primarily from the B cations, but are tuned by the cation(s) at the A sites. Notable examples are </span>ferroelectric<span> titanates, magnetoresistive manganites, and layered A</span></span><sub>2</sub>BO<sub>4</sub><span> type superconducting cuprates. The A cation control of these properties can be described through a simple ionic approach by considering the sizes and charges of the A cations. The size control is approximated well by the mean A cation radius, equivalent to the traditional perovskite tolerance factor, and the size variance which describes the mismatch in ionic radii. Studies in recent years have shown that the latter term is extremely significant; ferroelectric, ferromagnetic, superconducting and structural transition temperatures all vary linearly with the size variance. A variance vs. size plot defines the ‘chemical window’ which enables property variations to be displayed usefully. The variance control of phase separation phenomena in manganite perovskites has also been demonstrated. In contrast, the A cation charge variance is shown to be unimportant in manganites and cuprates.</span></p></div>","PeriodicalId":10766,"journal":{"name":"Crystal Engineering","volume":"5 3","pages":"Pages 427-438"},"PeriodicalIF":0.0,"publicationDate":"2002-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1463-0184(02)00054-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77774910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 60
Nucleation and crystallization of CaCO3 in applied magnetic fields 外加磁场作用下碳酸钙的成核与结晶
Crystal Engineering Pub Date : 2002-09-01 DOI: 10.1016/S1463-0184(02)00035-7
S. Kobe , G. Dražić , A.C. Cefalas , E. Sarantopoulou , J. Stražišar
{"title":"Nucleation and crystallization of CaCO3 in applied magnetic fields","authors":"S. Kobe ,&nbsp;G. Dražić ,&nbsp;A.C. Cefalas ,&nbsp;E. Sarantopoulou ,&nbsp;J. Stražišar","doi":"10.1016/S1463-0184(02)00035-7","DOIUrl":"10.1016/S1463-0184(02)00035-7","url":null,"abstract":"<div><p><span>The formation of calcium carbonate is not only a common </span>ionic reaction<span><span> that takes place in natural processes, but also creates a problem known as scaling, which is present in our every day life and in various industrial processes and technologies. In spite of the simplicity of the reaction there is considerable variability in the properties of the solid product, such as: crystal form, particle size distribution, electro-kinetics potential, etc. The influence of the magnetic field on calcium carbonate precipitation has been known for a long time but despite a lot of effort, which has been made to explain this effect, researchers still disagree on the mechanism(s) responsible for it. The focus of our research work was to follow systematically the influence of the magnetic field on the crystal form of calcium carbonate precipitated from low concentration water solutions. By changing the strength of the field and the flow rate of the water through the system the calcite/aragonite/vaterite ratio varied. The crystal form and the particle-size distribution of the precipitated calcium carbonate were determined by using X-ray analyses and TEM. The theoretical part of the work was to study the mechanism of the influence of the magnetic field on the nucleation and further crystallization of calcium carbonate. Starting from </span>ab initio calculations the fundamental physics knowledge was used to propose a mechanism for a better understanding of the phenomena.</span></p></div>","PeriodicalId":10766,"journal":{"name":"Crystal Engineering","volume":"5 3","pages":"Pages 243-253"},"PeriodicalIF":0.0,"publicationDate":"2002-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1463-0184(02)00035-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80838617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 75
Crystal field splitting of highly excited electronic states of the 4fn–1 5d electronic configuration of trivalent rare earth ions in wide band gap crystals 宽禁带晶体中三价稀土离子4fn - 15d电子构型高激发态的晶体场分裂
Crystal Engineering Pub Date : 2002-09-01 DOI: 10.1016/S1463-0184(02)00030-8
A.C. Cefalas , S. Kobe , Z. Kollia , E. Sarantopoulou
{"title":"Crystal field splitting of highly excited electronic states of the 4fn–1 5d electronic configuration of trivalent rare earth ions in wide band gap crystals","authors":"A.C. Cefalas ,&nbsp;S. Kobe ,&nbsp;Z. Kollia ,&nbsp;E. Sarantopoulou","doi":"10.1016/S1463-0184(02)00030-8","DOIUrl":"10.1016/S1463-0184(02)00030-8","url":null,"abstract":"<div><p>The energy position and the spacing of the levels of the 4f<sup>n–1</sup><span><span>5d electronic configuration of the trivalent rare earth ion dopands in wide band gap fluoride crystal, depend on the symmetry and the type of the host matrix. </span>Crystal field splitting of the 4f</span><sup>2</sup>5d electronic configuration of the Nd<sup>3+</sup> ions in SrF<sub>2</sub> crystals have been observed in the VUV region of the spectrum. The absorption bands were due to the interconfigurational 4f<sup>3</sup>→4f<sup>2</sup>5d dipole allowed transitions between the ground state with 4f<sup>3</sup> electronic configuration of the Nd<sup>3+</sup> ions and the Stark components of the 4f<sup>2</sup><span>5d electronic configuration. The VUV spectra can be interpreted by applying the crystal field model, and taking into consideration both that lanthanide contraction of the 4f</span><sup>n–1</sup>5d electronic configuration of the rare earth ions is taking place, and that the contribution of the positively charged ions in the total electric field, is effectively decreased with increasing numbers of the electrons in the 4f<sup>n</sup> electronic configuration due to effective charge shielding.</p></div>","PeriodicalId":10766,"journal":{"name":"Crystal Engineering","volume":"5 3","pages":"Pages 203-208"},"PeriodicalIF":0.0,"publicationDate":"2002-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1463-0184(02)00030-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79559235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Rapid thermal annealing procedure for densification of sol-gel indium tin oxide thin films 溶胶-凝胶氧化铟锡薄膜致密化的快速热退火方法
Crystal Engineering Pub Date : 2002-09-01 DOI: 10.1016/S1463-0184(02)00028-X
K Daoudi , C.S Sandu , V.S Teodorescu , C Ghica , B Canut , M.G Blanchin , J.A Roger , M Oueslati , B Bessaïs
{"title":"Rapid thermal annealing procedure for densification of sol-gel indium tin oxide thin films","authors":"K Daoudi ,&nbsp;C.S Sandu ,&nbsp;V.S Teodorescu ,&nbsp;C Ghica ,&nbsp;B Canut ,&nbsp;M.G Blanchin ,&nbsp;J.A Roger ,&nbsp;M Oueslati ,&nbsp;B Bessaïs","doi":"10.1016/S1463-0184(02)00028-X","DOIUrl":"10.1016/S1463-0184(02)00028-X","url":null,"abstract":"<div><p><span><span><span>In this work, we report on the interest of the rapid thermal annealing (RTA) for </span>densification<span> of sol-gel (SG) indium<span> tin oxide (ITO) thin films. The crystalline structure of these ITO films was visualized by transmission electron microscopy (TEM) and corresponding </span></span></span>electron diffraction pattern were compared with data from pure In</span><sub>2</sub>O<sub>3</sub><span>. The average grain size, measured from TEM micrographs, ranges from 5 to 50 nm. The film densification was followed by Rutherford backscattering spectrometry coupled with cross-section TEM observations. A comparison with classical annealing is discussed.</span></p></div>","PeriodicalId":10766,"journal":{"name":"Crystal Engineering","volume":"5 3","pages":"Pages 187-193"},"PeriodicalIF":0.0,"publicationDate":"2002-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1463-0184(02)00028-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73366913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Effect of high temperature - pressure on SOI structure 高温高压对SOI结构的影响
Crystal Engineering Pub Date : 2002-09-01 DOI: 10.1016/S1463-0184(02)00024-2
A Misiuk , L Bryja , J Bak-Misiuk , J Ratajczak , I.V Antonova , V.P Popov
{"title":"Effect of high temperature - pressure on SOI structure","authors":"A Misiuk ,&nbsp;L Bryja ,&nbsp;J Bak-Misiuk ,&nbsp;J Ratajczak ,&nbsp;I.V Antonova ,&nbsp;V.P Popov","doi":"10.1016/S1463-0184(02)00024-2","DOIUrl":"10.1016/S1463-0184(02)00024-2","url":null,"abstract":"<div><p><span>Silicon on insulator (SOI) structures (Si / SiO</span><sub>2</sub><span> layer / Si) were prepared by bonding the oxidised Si wafer with the hydrogen implanted one and a cleavage of the last wafer by the Smart Cut technique. Effect of high temperature and hydrostatic pressure (HT–HP) treatment at temperatures up to 1570 K and pressure up to 1.2 GPa, typically for 5 h, on the SOI structures was investigated by Transmission Electron Microscopy, X-Ray and photoluminescence measurements.</span></p><p>The point and extended defects are created at HT–HP, especially near the SOI surface. That effect depends on the SOI preparation method and treatment conditions and is related to the hydrogen and pressure assisted oxygen outdiffusion from SiO<sub>2</sub> to the SOI surface and bulk.</p></div>","PeriodicalId":10766,"journal":{"name":"Crystal Engineering","volume":"5 3","pages":"Pages 155-161"},"PeriodicalIF":0.0,"publicationDate":"2002-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1463-0184(02)00024-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76931932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Yttrium oxide thin films: chemistry- stoichiometry-strain and microstructure 氧化钇薄膜:化学-化学计量-应变和微观结构
Crystal Engineering Pub Date : 2002-09-01 DOI: 10.1016/S1463-0184(02)00026-6
F Paumier , R.J Gaboriaud , A.R Kaul
{"title":"Yttrium oxide thin films: chemistry- stoichiometry-strain and microstructure","authors":"F Paumier ,&nbsp;R.J Gaboriaud ,&nbsp;A.R Kaul","doi":"10.1016/S1463-0184(02)00026-6","DOIUrl":"10.1016/S1463-0184(02)00026-6","url":null,"abstract":"<div><p><span><span>Yttrium oxide<span> thin films were in-situ deposited by </span></span>ion beam sputtering on Si, MgO and SrTiO</span><sub>3</sub> substrates. These Y<sub>2</sub>O<sub>3</sub> thin films were investigated mainly by means of x-ray diffraction. The strained state of the oxide layers was studied by the sin<sup>2</sup><span>ψ method as a function of the deposition parameters as well as the post annealing treatments. An in situ study of the kinetics of the internal strain relaxation process was performed as a function of temperature. The Arhenius plot of relaxation rate gives the activation energy of this strain relaxation process, which is 1.3 eV. The results obtained in this work were interpreted in terms of crystal chemistry and the stoichiometry-microstructure relationship.</span></p></div>","PeriodicalId":10766,"journal":{"name":"Crystal Engineering","volume":"5 3","pages":"Pages 169-175"},"PeriodicalIF":0.0,"publicationDate":"2002-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1463-0184(02)00026-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82205671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Synthesis and characterisation of Ga-doped hexagonal BaTiO3 掺ga六方BaTiO3的合成与表征
Crystal Engineering Pub Date : 2002-09-01 DOI: 10.1016/S1463-0184(02)00055-2
A. Feteira , G.M. Keith , M.J. Rampling , C.A. Kirk , I.M. Reaney , K. Sarma , N. Mc. Alford , D.C. Sinclair
{"title":"Synthesis and characterisation of Ga-doped hexagonal BaTiO3","authors":"A. Feteira ,&nbsp;G.M. Keith ,&nbsp;M.J. Rampling ,&nbsp;C.A. Kirk ,&nbsp;I.M. Reaney ,&nbsp;K. Sarma ,&nbsp;N. Mc. Alford ,&nbsp;D.C. Sinclair","doi":"10.1016/S1463-0184(02)00055-2","DOIUrl":"10.1016/S1463-0184(02)00055-2","url":null,"abstract":"<div><p>The hexagonal polymorph of BaTiO<sub>3</sub> (P6<sub>3</sub>/mmc) has been stablished at room temperature by partial replacement of Ti by Ga, where BaTi<sub>1-y</sub>Ga<sub>y</sub>O<sub>3-y/2</sub> and 0.06≤<em>y</em><span>≤0.125 for samples prepared at 1300°C. The unit cell expands with increasing y and Rietveld Refinement of Neutron diffraction data shows that oxygen vacancies occur only in the hexagonal close packed layers between the face-sharing Ti</span><sub>2</sub>O<sub>9</sub> dimers. Exaggerated grain growth (&gt;100 μm) occurs for ceramics processed at ≥1400°C and/or for sintering periods ≥2 hours. Electrical measurements show the materials to be electrically insulating with room temperature permittivity values of ~70–80. Dense ceramics (94–97% of the theoretical X-ray density) resonate at microwave frequencies with Q.f values of ~4000–8000 at ~5.5 GHz.</p></div>","PeriodicalId":10766,"journal":{"name":"Crystal Engineering","volume":"5 3","pages":"Pages 439-448"},"PeriodicalIF":0.0,"publicationDate":"2002-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1463-0184(02)00055-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87408853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Influence of thermal treatment on the structure of Ti–Al films 热处理对Ti-Al薄膜结构的影响
Crystal Engineering Pub Date : 2002-09-01 DOI: 10.1016/S1463-0184(02)00036-9
S.E Romankov, S Suleeva, T.V Volkova, E Ermakov
{"title":"Influence of thermal treatment on the structure of Ti–Al films","authors":"S.E Romankov,&nbsp;S Suleeva,&nbsp;T.V Volkova,&nbsp;E Ermakov","doi":"10.1016/S1463-0184(02)00036-9","DOIUrl":"10.1016/S1463-0184(02)00036-9","url":null,"abstract":"<div><p>Titanium aluminides based on TiAl and Ti<sub>3</sub><span><span>Al are potential materials for high temperature aerospace application. Their low density, high temperature creep resistance and strength, high oxidation resistance, make them excellent potential engine materials. It is reasonable to develop processing strategies for protective and </span>high temperature coatings<span><span> based on them. On magnetron sputtering the Ti–48% Al alloy films, the composition of which corresponds to the target’s one, have been obtained. When annealed, the </span>aluminium atoms have been discovered to diffuse into the substrate. The redistribution and the leveling of the films’ compositions in the volume take place. After annealing the film contains a higher titanium concentration. On sputtering the formation of the Ti</span></span><sub>3</sub><span>Al-based metastable phase in the films has been observed. This phase is the main one in the films and has a different morphology on different substrates. It is stable and doesn’t decompose at annealing. During annealing the new intermediate metastable phases, which are stable only within a definite temperature and concentration range, have developed. The structure, kinetics of phase transformation and evolution of the film microstructures depend on the structure and morphology of the substrate.</span></p></div>","PeriodicalId":10766,"journal":{"name":"Crystal Engineering","volume":"5 3","pages":"Pages 255-263"},"PeriodicalIF":0.0,"publicationDate":"2002-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1463-0184(02)00036-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85233711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Chemical self-diffusion in undoped ZnS and in undoped CdSe 未掺杂ZnS和未掺杂CdSe的化学自扩散
Crystal Engineering Pub Date : 2002-09-01 DOI: 10.1016/S1463-0184(02)00023-0
K. Lott, T. Nirk, O. Volobujeva
{"title":"Chemical self-diffusion in undoped ZnS and in undoped CdSe","authors":"K. Lott,&nbsp;T. Nirk,&nbsp;O. Volobujeva","doi":"10.1016/S1463-0184(02)00023-0","DOIUrl":"10.1016/S1463-0184(02)00023-0","url":null,"abstract":"<div><p><span>Chemical self-diffusion coefficients D(Δ) as a function of temperature T and metal (Zn or Cd) vapor pressure p</span><sub>Zn</sub> or p<sub>Cd</sub><span> has been studied in undoped ZnS and in undoped CdSe single crystals at high temperature. In the temperature range from 750 to 850 °C, D(Δ) in undoped ZnS can be described as D(Δ)=4.5×10</span><sup>−3</sup> exp(−0.69 eV/kT) and in the temperature range from 1050 to 1150 °C, D(Δ) can be described as D(Δ)=1.2×10<sup>−4</sup> exp(−0.43 eV/kT). The ZnS phase transition region is characterized by confused values of D(Δ) because of change due to mixture of phases. D(Δ) in ZnS and in CdSe is about three orders of magnitude faster than self-diffusion in these crystals in the same conditions. It was shown that the doubly ionized interstitial metal atoms are the dominanting diffusible defects in ZnS and in CdSe at high metal vapor pressure. D(Δ) is found to be almost independent on metal vapor pressure for undoped ZnS and for undoped CdSe at high p<sub>Zn</sub> or p<sub>Cd</sub>. In the temperature range from 565 to 700 °C, D(Δ) for CdSe can be expressed as D(Δ)=1.6×10<sup>−2</sup> exp(−0.41 eV/kT).</p></div>","PeriodicalId":10766,"journal":{"name":"Crystal Engineering","volume":"5 3","pages":"Pages 147-153"},"PeriodicalIF":0.0,"publicationDate":"2002-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1463-0184(02)00023-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80571218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Phase formation and phase transition of Ln1–xCaxCoO3–δ (Ln= La, Er) applied for bifunctional air electrodes Ln1-xCaxCoO3 -δ (Ln= La, Er)在双功能空气电极中的相形成与相变
Crystal Engineering Pub Date : 2002-09-01 DOI: 10.1016/S1463-0184(02)00056-4
A. Weidenkaff , S.G. Ebbinghaus , T. Lippert , M.J. Montenegro , C. Soltmann , R. Wessicken
{"title":"Phase formation and phase transition of Ln1–xCaxCoO3–δ (Ln= La, Er) applied for bifunctional air electrodes","authors":"A. Weidenkaff ,&nbsp;S.G. Ebbinghaus ,&nbsp;T. Lippert ,&nbsp;M.J. Montenegro ,&nbsp;C. Soltmann ,&nbsp;R. Wessicken","doi":"10.1016/S1463-0184(02)00056-4","DOIUrl":"10.1016/S1463-0184(02)00056-4","url":null,"abstract":"<div><p>The Ln<sub>1–x</sub>Ca<sub>x</sub>CoO<sub>3–δ</sub> (<em>x</em><span> = 0, 0.3, 0.4 and 0.5) (Ln = La, Er) phase formation process from chemical methods (amorphous and crystalline precursor decomposition) and a physical method (Pulsed Laser Deposition (PLD)) was monitored with high temperature X-ray powder diffraction (HT-XRD), thermal analysis, and high resolution transmission electron microscopy (HRTEM). The morphology and crystallographic structure of the products with identical composition obtained from different synthesis routes were systematically compared and evaluated for the possible application as electrocatalysts in bifunctional air electrodes.</span></p></div>","PeriodicalId":10766,"journal":{"name":"Crystal Engineering","volume":"5 3","pages":"Pages 449-457"},"PeriodicalIF":0.0,"publicationDate":"2002-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1463-0184(02)00056-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84140446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信