Rapid thermal annealing procedure for densification of sol-gel indium tin oxide thin films

K Daoudi , C.S Sandu , V.S Teodorescu , C Ghica , B Canut , M.G Blanchin , J.A Roger , M Oueslati , B Bessaïs
{"title":"Rapid thermal annealing procedure for densification of sol-gel indium tin oxide thin films","authors":"K Daoudi ,&nbsp;C.S Sandu ,&nbsp;V.S Teodorescu ,&nbsp;C Ghica ,&nbsp;B Canut ,&nbsp;M.G Blanchin ,&nbsp;J.A Roger ,&nbsp;M Oueslati ,&nbsp;B Bessaïs","doi":"10.1016/S1463-0184(02)00028-X","DOIUrl":null,"url":null,"abstract":"<div><p><span><span><span>In this work, we report on the interest of the rapid thermal annealing (RTA) for </span>densification<span> of sol-gel (SG) indium<span> tin oxide (ITO) thin films. The crystalline structure of these ITO films was visualized by transmission electron microscopy (TEM) and corresponding </span></span></span>electron diffraction pattern were compared with data from pure In</span><sub>2</sub>O<sub>3</sub><span>. The average grain size, measured from TEM micrographs, ranges from 5 to 50 nm. The film densification was followed by Rutherford backscattering spectrometry coupled with cross-section TEM observations. A comparison with classical annealing is discussed.</span></p></div>","PeriodicalId":10766,"journal":{"name":"Crystal Engineering","volume":"5 3","pages":"Pages 187-193"},"PeriodicalIF":0.0000,"publicationDate":"2002-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1463-0184(02)00028-X","citationCount":"23","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S146301840200028X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23

Abstract

In this work, we report on the interest of the rapid thermal annealing (RTA) for densification of sol-gel (SG) indium tin oxide (ITO) thin films. The crystalline structure of these ITO films was visualized by transmission electron microscopy (TEM) and corresponding electron diffraction pattern were compared with data from pure In2O3. The average grain size, measured from TEM micrographs, ranges from 5 to 50 nm. The film densification was followed by Rutherford backscattering spectrometry coupled with cross-section TEM observations. A comparison with classical annealing is discussed.

溶胶-凝胶氧化铟锡薄膜致密化的快速热退火方法
在这项工作中,我们报告了快速热退火(RTA)对溶胶-凝胶(SG)氧化铟锡(ITO)薄膜致密化的兴趣。通过透射电子显微镜(TEM)观察了这些ITO薄膜的晶体结构,并将其电子衍射图与纯In2O3的数据进行了比较。从TEM显微图中测量的平均晶粒尺寸范围为5至50 nm。薄膜致密化后采用卢瑟福后向散射光谱法结合透射电镜观察。讨论了与经典退火的比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信