A.C. Cefalas , S. Kobe , Z. Kollia , E. Sarantopoulou
{"title":"宽禁带晶体中三价稀土离子4fn - 15d电子构型高激发态的晶体场分裂","authors":"A.C. Cefalas , S. Kobe , Z. Kollia , E. Sarantopoulou","doi":"10.1016/S1463-0184(02)00030-8","DOIUrl":null,"url":null,"abstract":"<div><p>The energy position and the spacing of the levels of the 4f<sup>n–1</sup><span><span>5d electronic configuration of the trivalent rare earth ion dopands in wide band gap fluoride crystal, depend on the symmetry and the type of the host matrix. </span>Crystal field splitting of the 4f</span><sup>2</sup>5d electronic configuration of the Nd<sup>3+</sup> ions in SrF<sub>2</sub> crystals have been observed in the VUV region of the spectrum. The absorption bands were due to the interconfigurational 4f<sup>3</sup>→4f<sup>2</sup>5d dipole allowed transitions between the ground state with 4f<sup>3</sup> electronic configuration of the Nd<sup>3+</sup> ions and the Stark components of the 4f<sup>2</sup><span>5d electronic configuration. The VUV spectra can be interpreted by applying the crystal field model, and taking into consideration both that lanthanide contraction of the 4f</span><sup>n–1</sup>5d electronic configuration of the rare earth ions is taking place, and that the contribution of the positively charged ions in the total electric field, is effectively decreased with increasing numbers of the electrons in the 4f<sup>n</sup> electronic configuration due to effective charge shielding.</p></div>","PeriodicalId":10766,"journal":{"name":"Crystal Engineering","volume":"5 3","pages":"Pages 203-208"},"PeriodicalIF":0.0000,"publicationDate":"2002-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1463-0184(02)00030-8","citationCount":"3","resultStr":"{\"title\":\"Crystal field splitting of highly excited electronic states of the 4fn–1 5d electronic configuration of trivalent rare earth ions in wide band gap crystals\",\"authors\":\"A.C. Cefalas , S. Kobe , Z. Kollia , E. Sarantopoulou\",\"doi\":\"10.1016/S1463-0184(02)00030-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The energy position and the spacing of the levels of the 4f<sup>n–1</sup><span><span>5d electronic configuration of the trivalent rare earth ion dopands in wide band gap fluoride crystal, depend on the symmetry and the type of the host matrix. </span>Crystal field splitting of the 4f</span><sup>2</sup>5d electronic configuration of the Nd<sup>3+</sup> ions in SrF<sub>2</sub> crystals have been observed in the VUV region of the spectrum. The absorption bands were due to the interconfigurational 4f<sup>3</sup>→4f<sup>2</sup>5d dipole allowed transitions between the ground state with 4f<sup>3</sup> electronic configuration of the Nd<sup>3+</sup> ions and the Stark components of the 4f<sup>2</sup><span>5d electronic configuration. The VUV spectra can be interpreted by applying the crystal field model, and taking into consideration both that lanthanide contraction of the 4f</span><sup>n–1</sup>5d electronic configuration of the rare earth ions is taking place, and that the contribution of the positively charged ions in the total electric field, is effectively decreased with increasing numbers of the electrons in the 4f<sup>n</sup> electronic configuration due to effective charge shielding.</p></div>\",\"PeriodicalId\":10766,\"journal\":{\"name\":\"Crystal Engineering\",\"volume\":\"5 3\",\"pages\":\"Pages 203-208\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/S1463-0184(02)00030-8\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystal Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1463018402000308\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1463018402000308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Crystal field splitting of highly excited electronic states of the 4fn–1 5d electronic configuration of trivalent rare earth ions in wide band gap crystals
The energy position and the spacing of the levels of the 4fn–15d electronic configuration of the trivalent rare earth ion dopands in wide band gap fluoride crystal, depend on the symmetry and the type of the host matrix. Crystal field splitting of the 4f25d electronic configuration of the Nd3+ ions in SrF2 crystals have been observed in the VUV region of the spectrum. The absorption bands were due to the interconfigurational 4f3→4f25d dipole allowed transitions between the ground state with 4f3 electronic configuration of the Nd3+ ions and the Stark components of the 4f25d electronic configuration. The VUV spectra can be interpreted by applying the crystal field model, and taking into consideration both that lanthanide contraction of the 4fn–15d electronic configuration of the rare earth ions is taking place, and that the contribution of the positively charged ions in the total electric field, is effectively decreased with increasing numbers of the electrons in the 4fn electronic configuration due to effective charge shielding.