A Misiuk , L Bryja , J Bak-Misiuk , J Ratajczak , I.V Antonova , V.P Popov
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引用次数: 3
Abstract
Silicon on insulator (SOI) structures (Si / SiO2 layer / Si) were prepared by bonding the oxidised Si wafer with the hydrogen implanted one and a cleavage of the last wafer by the Smart Cut technique. Effect of high temperature and hydrostatic pressure (HT–HP) treatment at temperatures up to 1570 K and pressure up to 1.2 GPa, typically for 5 h, on the SOI structures was investigated by Transmission Electron Microscopy, X-Ray and photoluminescence measurements.
The point and extended defects are created at HT–HP, especially near the SOI surface. That effect depends on the SOI preparation method and treatment conditions and is related to the hydrogen and pressure assisted oxygen outdiffusion from SiO2 to the SOI surface and bulk.
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