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2006 International SiGe Technology and Device Meeting最新文献

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Imapct of SiN on Performance in Novel CMOS Architecture Using Substrate Strained-SiGe and Mechanical Strained-Si Technology 基于衬底应变si和机械应变si技术的新型CMOS结构中SiN对性能的影响
2006 International SiGe Technology and Device Meeting Pub Date : 2006-05-15 DOI: 10.1109/ISTDM.2006.246594
Yu Min Lin, San-Lein Wu, S. Chang, Pang-Shiu Chen, Cheewee Liu
{"title":"Imapct of SiN on Performance in Novel CMOS Architecture Using Substrate Strained-SiGe and Mechanical Strained-Si Technology","authors":"Yu Min Lin, San-Lein Wu, S. Chang, Pang-Shiu Chen, Cheewee Liu","doi":"10.1109/ISTDM.2006.246594","DOIUrl":"https://doi.org/10.1109/ISTDM.2006.246594","url":null,"abstract":"In this work, we report the demonstration of a novel CMOS process with substrate-strained-SiGe pMOSFET and mechanical-strained Si nMOSFET fabricated on one chip. The device structure combines the advantages of compressively SiGe materials and tensile Si induced by SiN layer to achieve higher carrier mobility. Moreover, due to the separation process of two kind devices, individual MOSFETs was tuned independently to their optimum performance on the same wafer and show a great flexibility for developing next-generation high-performance CMOS","PeriodicalId":106814,"journal":{"name":"2006 International SiGe Technology and Device Meeting","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127458820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reducing Threading Dislocation Densities in SiGe Mismatched Layers by Controllingc Strainc rate and Surface Roughness 通过控制应变速率和表面粗糙度降低SiGe错配层中的螺纹位错密度
2006 International SiGe Technology and Device Meeting Pub Date : 2006-05-15 DOI: 10.1109/ISTDM.2006.246535
S. Gupta, Yu Bai, D. Isaacson, E. Fitzgerald
{"title":"Reducing Threading Dislocation Densities in SiGe Mismatched Layers by Controllingc Strainc rate and Surface Roughness","authors":"S. Gupta, Yu Bai, D. Isaacson, E. Fitzgerald","doi":"10.1109/ISTDM.2006.246535","DOIUrl":"https://doi.org/10.1109/ISTDM.2006.246535","url":null,"abstract":"Further insight into strained layer relaxation processes have been achieved in this work. Effects of surface roughness, dislocation velocities, and dislocation nucleation have been de-coupled. In order to achieve low threading dislocation density with a high degree of relaxation, we are forced to create structures that introduce a high degree of lattice mismatch at the surface, i.e. a gradient in Ge composition in thickness. Thus, the graded layer must be introduced. However, these experiments have shed further light on the design of such structures, and we have produced relaxed layers with low threading dislocation density that are 4times less thick than their control graded composition layers","PeriodicalId":106814,"journal":{"name":"2006 International SiGe Technology and Device Meeting","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126649134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of Upper and Lower Limits of Carrier Concentration for Two-Dimensional Electron Gas in Strained Silicon 应变硅中二维电子气体载流子浓度上下限的研究
2006 International SiGe Technology and Device Meeting Pub Date : 2006-05-15 DOI: 10.1109/ISTDM.2006.246539
Jian Liu, B. Shi, K. Lai, T. Lu, Yahong Xie, D. Tsui
{"title":"Investigation of Upper and Lower Limits of Carrier Concentration for Two-Dimensional Electron Gas in Strained Silicon","authors":"Jian Liu, B. Shi, K. Lai, T. Lu, Yahong Xie, D. Tsui","doi":"10.1109/ISTDM.2006.246539","DOIUrl":"https://doi.org/10.1109/ISTDM.2006.246539","url":null,"abstract":"Both the simulation and experimental results confirm that there exist upper and lower limits of carrier concentration in the quantum well. The small difference between the upper and lower limits explains the narrow distribution of 2DEG density from all published experimental observations in strained Si. We report the lowest as-grown carrier density to date in Si/SiGe heterostructures","PeriodicalId":106814,"journal":{"name":"2006 International SiGe Technology and Device Meeting","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126197841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and Characterization of Patterned Si/SiGe Lines with Asymmetric Biaxial Stress 具有非对称双轴应力的图像化Si/SiGe线的制备和表征
2006 International SiGe Technology and Device Meeting Pub Date : 2006-05-15 DOI: 10.1109/ISTDM.2006.246552
D. Buca, B. Hollander, S. Feste, H. Trinkaus, S. Mantl, R. Loo, M. Caymax
{"title":"Fabrication and Characterization of Patterned Si/SiGe Lines with Asymmetric Biaxial Stress","authors":"D. Buca, B. Hollander, S. Feste, H. Trinkaus, S. Mantl, R. Loo, M. Caymax","doi":"10.1109/ISTDM.2006.246552","DOIUrl":"https://doi.org/10.1109/ISTDM.2006.246552","url":null,"abstract":"We have investigated strain relaxation of patterned SiGe lines after He implantation and annealing. Asymmetric relaxation of the SiGe lines transforms biaxial stress into nearly uniaxial stress for very narrow lines. The effect of the anisotropic stress on the carrier mobility of strained silicon on top of the SiGe lines will be discussed in the frame of the piezoelectric resistivity model as presented by Kanda (1982)","PeriodicalId":106814,"journal":{"name":"2006 International SiGe Technology and Device Meeting","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127628274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of in-plane strain relaxation in strained layers after mesa isolation using a newly developed plane-NBD method 用新开发的平面nbd方法表征台地隔离后应变层的面内应变松弛
2006 International SiGe Technology and Device Meeting Pub Date : 2006-05-15 DOI: 10.1109/ISTDM.2006.246551
K. Usuda, T. Irisawa, T. Numata, N. Hirashita, S. Takagi
{"title":"Characterization of in-plane strain relaxation in strained layers after mesa isolation using a newly developed plane-NBD method","authors":"K. Usuda, T. Irisawa, T. Numata, N. Hirashita, S. Takagi","doi":"10.1109/ISTDM.2006.246551","DOIUrl":"https://doi.org/10.1109/ISTDM.2006.246551","url":null,"abstract":"We have developed the plane-NBD method and applied to characterization of strain relaxation of compressive strained SGOI layers. It was found that strain relaxation within compressive-strained SGOI layers after isolation processing were dependent on mesa structures. The plane-NBD method is unique and effective for evaluating in-plane strain distribution within small and thin strained layers in sub-mum size","PeriodicalId":106814,"journal":{"name":"2006 International SiGe Technology and Device Meeting","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131056527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon 硅上的Ge/SiGe量子限制Stark效应调制器
2006 International SiGe Technology and Device Meeting Pub Date : 2006-05-15 DOI: 10.1109/ISTDM.2006.246579
J. Harris, Y. Kuo, D. Miller
{"title":"Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon","authors":"J. Harris, Y. Kuo, D. Miller","doi":"10.1109/ISTDM.2006.246579","DOIUrl":"https://doi.org/10.1109/ISTDM.2006.246579","url":null,"abstract":"We have demonstrated efficient QCSE in silicon-based structures, using strained Ge MQWs. The behavior of the exciton peaks, the band edge shift and the shift in absorption coefficient are comparable to those observed in III-V materials at similar wavelengths. Our materials and fabrication processes are completely CMOS compatible and suitable for mass production. This approach is therefore very promising for silicon-based electro-absorption modulators operating at high speed, low power, and low operating voltage and with small device areas","PeriodicalId":106814,"journal":{"name":"2006 International SiGe Technology and Device Meeting","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133150359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strained and Relaxed SiGe for High-Mobility MOSFETs 高迁移率mosfet的应变和松弛SiGe
2006 International SiGe Technology and Device Meeting Pub Date : 2006-05-15 DOI: 10.1109/ISTDM.2006.246514
M. Lee, D. Antoniadis, E. Fitzgerald
{"title":"Strained and Relaxed SiGe for High-Mobility MOSFETs","authors":"M. Lee, D. Antoniadis, E. Fitzgerald","doi":"10.1109/ISTDM.2006.246514","DOIUrl":"https://doi.org/10.1109/ISTDM.2006.246514","url":null,"abstract":"In this talk, the authors first review the earlier results on high-mobility, biaxially strained Si, SiGe, and Ge channels grown on relaxed Si1-xGex/Si(001) buffers. Next, they discuss their experiments with SiGe growth on Si(110) and (111), with a particular emphasis on the unique dislocation morphologies that emerge. The author will also show that the growth kinetics and dislocation behavior on (110) and (111) have significance for SiGe source/drain technology","PeriodicalId":106814,"journal":{"name":"2006 International SiGe Technology and Device Meeting","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114590718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Selective Epitaxial Si/SiGe for VT Shift Adjustment in High k pMOS Devices 高k pMOS器件VT移位调节的选择性外延Si/SiGe
2006 International SiGe Technology and Device Meeting Pub Date : 2006-05-15 DOI: 10.1109/ISTDM.2006.246518
R. Loo, H. Sorada, A. Inoue, B. Lee, S. Hyun, G. Lujan, T. Hoffmann, M. Caymax
{"title":"Selective Epitaxial Si/SiGe for VT Shift Adjustment in High k pMOS Devices","authors":"R. Loo, H. Sorada, A. Inoue, B. Lee, S. Hyun, G. Lujan, T. Hoffmann, M. Caymax","doi":"10.1109/ISTDM.2006.246518","DOIUrl":"https://doi.org/10.1109/ISTDM.2006.246518","url":null,"abstract":"This work discusses the influence of the underlying SiGe on the growth kinetics during the deposition of the Si-cap layer. The importance and feasibility of the required process control is demonstrated by charge pumping measurements and energy dispersive X-ray spectroscopy (EDX) on pMOS devices. The analysis clearly demonstrates the influence of the Si thickness on the quality of the gate dielectric/channel interface. We also discuss the presence of thermal loading effects, by comparing the growth behavior with and without Si recess prior to the SEG","PeriodicalId":106814,"journal":{"name":"2006 International SiGe Technology and Device Meeting","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129486381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Growth of Strain-Relaxed Si1-yCy Films with Step Carbon Composition by Gas Source MBE 气源MBE法生长阶梯碳组分应变松弛Si1-yCy薄膜
2006 International SiGe Technology and Device Meeting Pub Date : 2006-05-15 DOI: 10.1109/ISTDM.2006.246601
H. Ishihara, M. Murano, A. Yamada, M. Konagai
{"title":"Growth of Strain-Relaxed Si1-yCy Films with Step Carbon Composition by Gas Source MBE","authors":"H. Ishihara, M. Murano, A. Yamada, M. Konagai","doi":"10.1109/ISTDM.2006.246601","DOIUrl":"https://doi.org/10.1109/ISTDM.2006.246601","url":null,"abstract":"The three stacked Si1-yCy layers with various carbon compositions have been grown by a gas-source MBE system at a temperature of 620degC. The structure is a promising candidate as a virtual substrate for the growth of a compressively-strained Si layer on Si in order to enhance the electron mobility towards the vertical direction. The (004) XRD pattern of the sample consisted of three peaks from the Si1-yCy layers and the relaxation of the layers was confirmed. From (115) reciprocal lattice space map, the relaxation ratio of the three layers was calculated and it was found that the ratios were 0, 12 and 60% from the bottom layer to the top layer. These results showed the high potential of the structure as a vertical substrate for the Si technology","PeriodicalId":106814,"journal":{"name":"2006 International SiGe Technology and Device Meeting","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128561856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of a SiGe Layer After Isotropic Etching of Surrounding Si 周围Si各向同性蚀刻后SiGe层的表征
2006 International SiGe Technology and Device Meeting Pub Date : 2006-05-15 DOI: 10.1109/ISTDM.2006.246525
S. Borel, V. Caubet, D. Lafond, O. Kermarrec, Y. Campidelli
{"title":"Characterization of a SiGe Layer After Isotropic Etching of Surrounding Si","authors":"S. Borel, V. Caubet, D. Lafond, O. Kermarrec, Y. Campidelli","doi":"10.1109/ISTDM.2006.246525","DOIUrl":"https://doi.org/10.1109/ISTDM.2006.246525","url":null,"abstract":"Among the new architectures that are under development for the very advanced technological nodes, the SON transistors are very promising, insofar as they allow a better electrostatic control of the conduction, compared with standard MOSFETs. The consequence is a limited power loss, which is desirable for mobile devices applications. Several publications from Monfray et al. describe the SON concept and its associated technology. In order to take advantage of the mobility improvement brought by SiGe as a new material for the conduction channel, the SON technology can be recovered and adapted so as to fit with new requirements, including the use of a Si sacrificial layer instead of the previously used SiGe. In that aim, we have developed an isotropic etching process that enables removing Si with a very high selectivity to SiGe. This process has been described and a mechanism has been suggested. This paper is a continuation of this work, as we confirm the twofold mechanism of etching and passivation during the process, and we propose a more precise screenplay for it","PeriodicalId":106814,"journal":{"name":"2006 International SiGe Technology and Device Meeting","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128189492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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