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1979 IEEE Power Electronics Specialists Conference最新文献

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Power converters 电源转换器
1979 IEEE Power Electronics Specialists Conference Pub Date : 1979-06-01 DOI: 10.1109/pedstc.2010.5471762
R. Hoft, W. McMurray
{"title":"Power converters","authors":"R. Hoft, W. McMurray","doi":"10.1109/pedstc.2010.5471762","DOIUrl":"https://doi.org/10.1109/pedstc.2010.5471762","url":null,"abstract":"Modern power converters use either thyristors or transistors as the power switching devices. Thyristors are used in high power applications while transistors produce more economic converters at low power. Advances in power transistors during the past few years have pushed the change over level upward. Frequently, power transistors are now used in converters with ratings up to and exceeding 100 kw. This session includes papers on both thyristor and transistor power converters in a wide range of applications. In addition, it includes one paper which involves SCR's, triacs and transistors in a single converter, and another paper which utilizes saturable cores in the control of a transistor PWM inverter. This approach is one which was pursued quite vigorously in the early 1950 ls when power transistors first began to be available and when magnetic amplifiers were still struggling for their survival.","PeriodicalId":101593,"journal":{"name":"1979 IEEE Power Electronics Specialists Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121704575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
General topological properties of switching structures 开关结构的一般拓扑性质
1979 IEEE Power Electronics Specialists Conference Pub Date : 1979-06-01 DOI: 10.1109/PESC.1979.7081016
Slobodan Cuk
{"title":"General topological properties of switching structures","authors":"Slobodan Cuk","doi":"10.1109/PESC.1979.7081016","DOIUrl":"https://doi.org/10.1109/PESC.1979.7081016","url":null,"abstract":"Investigation of a wide variety of switching converter toplogies culminates in the establishment of the most general correlation between the converter topologies--the duality relationships. The recognition of this general law leads to a number of new results: new converter topologies generated by the application of the duality transformation to the existing converter configurations, the discovery of the new mode of converter operation (discontinuous capacitance voltage mode) as well as significantly improved understanding of the existing converters and their equivalent circuit models.","PeriodicalId":101593,"journal":{"name":"1979 IEEE Power Electronics Specialists Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1979-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127795329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 121
Gate and emitter design for high frequency thyristors 高频晶闸管的栅极和发射极设计
1979 IEEE Power Electronics Specialists Conference Pub Date : 1900-01-01 DOI: 10.1109/pesc.1979.7081012
C. Chu, J. E. Johnson, J. Donlon
{"title":"Gate and emitter design for high frequency thyristors","authors":"C. Chu, J. E. Johnson, J. Donlon","doi":"10.1109/pesc.1979.7081012","DOIUrl":"https://doi.org/10.1109/pesc.1979.7081012","url":null,"abstract":"To minimize the switching loss of high frequency thyristors, three kinds of multifinger gates and emitter designs are studied. The device characteristics were evaluated. The power loss during high frequency operation was measured. The rate of rise of forward current was studied.","PeriodicalId":101593,"journal":{"name":"1979 IEEE Power Electronics Specialists Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124106447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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