Gate and emitter design for high frequency thyristors

1979 IEEE Power Electronics Specialists Conference Pub Date : 1900-01-01 DOI:10.1109/pesc.1979.7081012

C. Chu, J. E. Johnson, J. Donlon

引用次数: 1

Abstract

To minimize the switching loss of high frequency thyristors, three kinds of multifinger gates and emitter designs are studied. The device characteristics were evaluated. The power loss during high frequency operation was measured. The rate of rise of forward current was studied.

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高频晶闸管的栅极和发射极设计

为了减小高频晶闸管的开关损耗，研究了三种多指闸管和发射极的设计。对器件特性进行了评价。测量了高频工作时的功率损耗。研究了正向电流的上升速率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1979 IEEE Power Electronics Specialists Conference

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