{"title":"高频晶闸管的栅极和发射极设计","authors":"C. Chu, J. E. Johnson, J. Donlon","doi":"10.1109/pesc.1979.7081012","DOIUrl":null,"url":null,"abstract":"To minimize the switching loss of high frequency thyristors, three kinds of multifinger gates and emitter designs are studied. The device characteristics were evaluated. The power loss during high frequency operation was measured. The rate of rise of forward current was studied.","PeriodicalId":101593,"journal":{"name":"1979 IEEE Power Electronics Specialists Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Gate and emitter design for high frequency thyristors\",\"authors\":\"C. Chu, J. E. Johnson, J. Donlon\",\"doi\":\"10.1109/pesc.1979.7081012\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To minimize the switching loss of high frequency thyristors, three kinds of multifinger gates and emitter designs are studied. The device characteristics were evaluated. The power loss during high frequency operation was measured. The rate of rise of forward current was studied.\",\"PeriodicalId\":101593,\"journal\":{\"name\":\"1979 IEEE Power Electronics Specialists Conference\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1979 IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/pesc.1979.7081012\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1979 IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/pesc.1979.7081012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Gate and emitter design for high frequency thyristors
To minimize the switching loss of high frequency thyristors, three kinds of multifinger gates and emitter designs are studied. The device characteristics were evaluated. The power loss during high frequency operation was measured. The rate of rise of forward current was studied.