Materials Today Quantum最新文献_第4页

Contrasting character of Cr and Mn solitary dopants in CdTe CdTe中Cr和Mn孤立掺杂物的对比特性

Materials Today Quantum Pub Date : 2025-06-01 Epub Date: 2025-03-18 DOI: 10.1016/j.mtquan.2025.100032

Sameer Gupta, Damien Caliste, Pascal Pochet

{"title":"Contrasting character of Cr and Mn solitary dopants in CdTe","authors":"Sameer Gupta, Damien Caliste, Pascal Pochet","doi":"10.1016/j.mtquan.2025.100032","DOIUrl":"10.1016/j.mtquan.2025.100032","url":null,"abstract":"<div><div>Solitary dopants or single impurities embedded in semiconductor matrix having unique magnetic and optical properties are emerging as a promising platform to realize novel quantum devices. The realization of such devices however requires an atomic level control over the growth of such quantum defects to establish reproducible and scalable defect creation strategies. Among the solitary dopants, transition metal doped in semiconductor quantum dots are particularly interesting due to the ease of optical spin addressability. In this article we have investigated the challenges associated with embedding magnetic impurities, considering the case of single Mn and Cr dopants in the CdTe lattice. Optical control of single spin of such magnetic impurities trapped in a CdTe quantum dot has already been reported. We show using the first principle based calculations that the interactions with CdTe intrinsic defects poses challenges to the growth of single Cr and Mn trapped in a CdTe nanostructure. We provide a detailed thermodynamic analysis establishing that control over the growth process to embed a single Mn in CdTe, can be achieved without significant challenge but remains elusive in the case of Cr. Interestingly, some of the defect complexes resulting from the interaction of the metal dopant and intrinsic defects present the possibility to control and manipulate the spin and oxidation state of the impurity in the complex configuration. These defect complexes opens up the possibility of tuning optical and magnetic properties of single TM dopants. Finally, we propose guidelines and defect engineering strategies to mitigate or on the contrary to select the creation of such complexes.</div></div>","PeriodicalId":100894,"journal":{"name":"Materials Today Quantum","volume":"6 ","pages":"Article 100032"},"PeriodicalIF":0.0,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143680890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum metric nonlinear spin-orbit torque enhanced by topological bands 拓扑带增强的量子度量非线性自旋轨道转矩

Materials Today Quantum Pub Date : 2025-06-01 Epub Date: 2025-05-07 DOI: 10.1016/j.mtquan.2025.100040

Xukun Feng , Weikang Wu , Hui Wang , Weibo Gao , Lay Kee Ang , Y.X. Zhao , Cong Xiao , Shengyuan A. Yang

引用次数: 0

First-principles prediction of anisotropic superconductivity in the nodal-line semi-metal TlTaSe2 节点线半金属TlTaSe2各向异性超导的第一性原理预测

Materials Today Quantum Pub Date : 2025-06-01 Epub Date: 2025-04-03 DOI: 10.1016/j.mtquan.2025.100037

Mukhtar Lawan Adam , Ibrahim Buba Garba , Sulaiman Muhammad Gana , Bala Ismail Adamu , Abba Alhaji Bala , Abdulsalam Aji Suleiman , Ahmad Hamisu , Tijjani Hassan Darma , Auwal Musa , Abdulkadir S. Gidado

{"title":"First-principles prediction of anisotropic superconductivity in the nodal-line semi-metal TlTaSe2","authors":"Mukhtar Lawan Adam , Ibrahim Buba Garba , Sulaiman Muhammad Gana , Bala Ismail Adamu , Abba Alhaji Bala , Abdulsalam Aji Suleiman , Ahmad Hamisu , Tijjani Hassan Darma , Auwal Musa , Abdulkadir S. Gidado","doi":"10.1016/j.mtquan.2025.100037","DOIUrl":"10.1016/j.mtquan.2025.100037","url":null,"abstract":"<div><div>Recent advances in topological quantum materials have spurred significant interest in exploring superconductors that also host nontrivial band topology, as these materials can serve as platforms for novel electronic phases and quantum technologies. TlTaSe<sub>2</sub> is one such non-centrosymmetric, quasi-two-dimensional semimetal with nodal-line topological features protected by mirror-reflection symmetry. In this study, we theoretically predict its superconducting properties using first-principles anisotropic Migdal–Eliashberg theory. Our results indicate that the states at the Fermi, are primarily Ta 5d and Tl 6p orbitals. Thus, exhibiting a multiband electronic structure. Notably, from our calculations, we find two distinct superconducting gaps of 2.15 meV and 4.5 meV on different Fermi surface sheets, arising from strongly anisotropic electron-phonon interactions predominantly involving in-plane vibrations of the Ta and Tl atoms. Using the Allen–Dynes-modified McMillan formula with a Coulomb pseudopotential μ* = 0.16, we predict a superconducting transition temperature Tc of 6.67 K. These findings underscore the significance of TlTaSe<sub>2</sub> as a candidate for topological superconductivity and provide insights into how the interplay between anisotropy, electron-phonon coupling, and nontrivial band topology can be explored for quantum computing and spintronics applications.</div></div>","PeriodicalId":100894,"journal":{"name":"Materials Today Quantum","volume":"6 ","pages":"Article 100037"},"PeriodicalIF":0.0,"publicationDate":"2025-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143783879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Polariton-induced unconventional superconductivity and emergent SU(2) symmetry in moiré flat bands moirir平坦带中极化诱导的非常规超导性和涌现的SU(2)对称性

Materials Today Quantum Pub Date : 2025-06-01 Epub Date: 2025-04-26 DOI: 10.1016/j.mtquan.2025.100039

Kai Sun, Hui Deng

引用次数: 0

Quantum metric non-linear Hall effect in an antiferromagnetic topological insulator thin-film EuSn2As2 反铁磁拓扑绝缘体薄膜EuSn2As2的量子度量非线性霍尔效应

Materials Today Quantum Pub Date : 2025-03-01 Epub Date: 2025-02-17 DOI: 10.1016/j.mtquan.2025.100027

Hung-Ju Tien , Hsin Lin , Liang Fu , Tay-Rong Chang

{"title":"Quantum metric non-linear Hall effect in an antiferromagnetic topological insulator thin-film EuSn2As2","authors":"Hung-Ju Tien , Hsin Lin , Liang Fu , Tay-Rong Chang","doi":"10.1016/j.mtquan.2025.100027","DOIUrl":"10.1016/j.mtquan.2025.100027","url":null,"abstract":"<div><div>The quantum geometric structure of electrons introduces fundamental insights into understanding quantum effects in materials. One notable manifestation is the non-linear Hall effect (NLHE), which has drawn considerable interest for its potential to overcome the intrinsic limitations of semiconductor diodes at low input power and high frequency. In this study, we investigate NLHE stemming from the real part of the quantum geometric tensor, specifically the quantum metric, in an antiferromagnetic topological material, EuSn<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>As<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>, using density functional theory. Our calculations predict a remarkable NLHE arising from a symmetry-protected, single Type-II surface Dirac cone in the even-numbered-layer two-dimensional slab thin-film, yielding a non-linear Hall conductivity exceeding 20 mA/V<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>—an order of magnitude larger than previously reported. This single Dirac band dispersion represents the simplest model for generating NLHE, positioning the EuSn<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>As<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> thin-film as a “hydrogen atom” for NLHE systems. Additionally, we observe NLHE from band-edge states near the Fermi level. Our findings also reveal that 30% phosphorus (P) doping can double the non-linear Hall conductivity. With its substantial and tunable NLHE, EuSn<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>As<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> thin-films present promising applications in antiferromagnetic spintronics and rectification devices.</div></div>","PeriodicalId":100894,"journal":{"name":"Materials Today Quantum","volume":"5 ","pages":"Article 100027"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143453426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Conversion between dipoles with different spatial parities by circularly polarized light 圆偏振光在不同空间偶极子间的转换

Materials Today Quantum Pub Date : 2025-03-01 Epub Date: 2024-12-12 DOI: 10.1016/j.mtquan.2024.100019

Satoru Hayami

引用次数: 0

Microwave-assisted synthesis of sulfur-doped carbon quantum dots and their application in logic gate operations 硫掺杂碳量子点的微波辅助合成及其在逻辑门运算中的应用

Materials Today Quantum Pub Date : 2025-03-01 Epub Date: 2024-12-17 DOI: 10.1016/j.mtquan.2024.100021

Lijun Liu , Xiangru Hou , Lu Ga , Yanqing Du , Jun Ai , Gerile Aodeng

引用次数: 0

Towards dissipationless topotronics 走向无耗散地形学

Materials Today Quantum Pub Date : 2025-03-01 Epub Date: 2025-01-16 DOI: 10.1016/j.mtquan.2025.100023

Qing Yan , Hailong Li , Hua Jiang , X.C. Xie

{"title":"Towards dissipationless topotronics","authors":"Qing Yan , Hailong Li , Hua Jiang , X.C. Xie","doi":"10.1016/j.mtquan.2025.100023","DOIUrl":"10.1016/j.mtquan.2025.100023","url":null,"abstract":"<div><div>Many aspects of topological physics offer a promising paradigm for the development of dissipationless electronic and quantum computing devices. Topological materials exhibit quantized transport and unidirectional edge states, which are inherently robust against backscattering and were thus previously assumed to be dissipationless. However, recent advancements in nanoscale thermal imaging have uncovered localized heat generation in these materials, highlighting an urgent need to reassess energy dissipation issues in topological systems. In this Perspective, we review recent progress in understanding energy dissipation in topological systems, including experimental observations enabled by pioneering thermal imaging techniques and theoretically proposed mechanisms. Central to this discussion is the recognition that energy dissipation arises from the evolution of carriers' energy distribution, independent of quantized electrical signatures. We discuss emerging criteria to identify dissipationless topological devices, providing guidance for the design of next-generation topotronics. Finally, we outline future directions, including the exploration of additional degrees of freedom, superconducting regimes, and non-Abelian operations, as well as the advancement of measurement techniques and scalable manufacturing processes, and especially emphasizing the importance of experimental verification of theoretical mechanisms.</div></div>","PeriodicalId":100894,"journal":{"name":"Materials Today Quantum","volume":"5 ","pages":"Article 100023"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Linear and nonlinear Edelstein effects in chiral topological semimetals 手性拓扑半金属中的线性和非线性Edelstein效应

Materials Today Quantum Pub Date : 2025-03-01 Epub Date: 2025-01-01 DOI: 10.1016/j.mtquan.2024.100022

Haowei Xu , Ju Li

{"title":"Linear and nonlinear Edelstein effects in chiral topological semimetals","authors":"Haowei Xu , Ju Li","doi":"10.1016/j.mtquan.2024.100022","DOIUrl":"10.1016/j.mtquan.2024.100022","url":null,"abstract":"<div><div>Recently, there has been growing interest in achieving on-demand control of magnetism through electrical and optical means. In this work, we provide first-principles predictions for the linear and nonlinear Edelstein effects (LEE and NLEE) in the chiral topological semimetal CoSi. The LEE and NLEE represent first- and second-order magnetic responses to external electric fields, enabling precise manipulation of magnetization via electrical and optical methods. We demonstrate that although both LEE and NLEE require time-reversal symmetry breaking, they can still be realized in non-magnetic materials, as time-reversal symmetry can be spontaneously broken by heat and dissipation, according to the second law of thermodynamics. Meanwhile, due to different inversion symmetry selection rules, the LEE and NLEE manifest opposite and identical signs in the two enantiomers of CoSi, respectively. We further quantify the magnitude of LEE and NLEE, showing that electrically or optically induced magnetization can reach 10 Bohr magneton per unit cell when the external electric field strength is comparable with the internal atomic electric field, which is on the order of 1 V/Å. Our work offers a systematical approach for predicting the electrical and optical control of magnetism in real materials, paving the way for potential applications in areas such as spintronics and magnetic memories.</div></div>","PeriodicalId":100894,"journal":{"name":"Materials Today Quantum","volume":"5 ","pages":"Article 100022"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Determination of band alignment of core/shell colloidal CdSe/CdS quantum dots, by optical and X-ray photo-electron spectroscopies 用光学和x射线光电子能谱法测定核/壳胶体CdSe/CdS量子点的能带排列

Materials Today Quantum Pub Date : 2025-03-01 Epub Date: 2025-01-30 DOI: 10.1016/j.mtquan.2025.100024

Damien Simonot , Céline Roux-Byl , Xiangzhen Xu , Willy Daney de Marcillac , Corentin Dabard , Mathieu G. Silly , Emmanuel Lhuillier , Thomas Pons , Simon Huppert , Agnès Maître

{"title":"Determination of band alignment of core/shell colloidal CdSe/CdS quantum dots, by optical and X-ray photo-electron spectroscopies","authors":"Damien Simonot , Céline Roux-Byl , Xiangzhen Xu , Willy Daney de Marcillac , Corentin Dabard , Mathieu G. Silly , Emmanuel Lhuillier , Thomas Pons , Simon Huppert , Agnès Maître","doi":"10.1016/j.mtquan.2025.100024","DOIUrl":"10.1016/j.mtquan.2025.100024","url":null,"abstract":"<div><div>Optical properties of multilayer semi-conductor nano-emitters are crucially dependent on the relative energy levels of their different components. For core/shell quantum dots, the relative energy difference between conduction band edge of core and shell materials induces, depending on its value, either a confinement of the electron within the core or a delocalization of its wave function within the whole quantum dot. This results in drastic consequences on the energy and the oscillator strength of the transitions. Surprisingly, the literature currently lacks a definitive value for this energy difference, called offset, between the conduction band edge of CdSe and CdS materials. Here, we develop a theoretical model expressing energy levels and considering quantum dot dimension, core/shell interface pressure, ligands and allowing to reliably determine the conduction band offset. Its value is determined experimentally using our model and both optical and X-ray photoelectron (XPS) spectroscopies.</div></div>","PeriodicalId":100894,"journal":{"name":"Materials Today Quantum","volume":"5 ","pages":"Article 100024"},"PeriodicalIF":0.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0