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Journal of Technology Computer Aided Design TCAD最新文献

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Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs 锗、硅和砷化镓中电子和空穴的高场输运和冲击电离的全带结构理论
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449160
M V. Fischetti;N. Sano;S. E. Laux;K. Natori
{"title":"Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs","authors":"M V. Fischetti;N. Sano;S. E. Laux;K. Natori","doi":"10.1109/TCAD.1996.6449160","DOIUrl":"10.1109/TCAD.1996.6449160","url":null,"abstract":"The empirical pseudopotential band-structure of Ge, Si, and GaAs is used to compute the impact ionization (pair production) rate for electrons and holes. The constant-matrix-element and Kane's random-k approximations are also employed, to assess the importance of the energy-dependence of the Coulomb matrix element, of momentum conservation, and of the joint density of states. For electrons in Si and electrons and holes in Ge and GaAs, the latter is found to be dominant, while for holes in Si momentum conservation appears to be an important constraint on ionization processes near threshold. These results are then fitted to an isotropie ionization rate, function of carrier energy only. Full-band-structure Monte Carlo simulations are finally performed in order to calibrate the acoustic and nonpolar-optical deformation potentials. The low-energy deformation potentials are obtained from the usual<sup>1</sup> fits to experimental velocity-field characteristics, while high-energy deformation potentials are determined from fits to experimental data on the ionization coefficients. The usual ambiguity of conventional Monte Carlo calibration of the scattering parameters ∼ using both carrier-phonon and impact ionization rates as fitting entities ∼ is thus removed, giving us better confidence on the final result. The deformation potentials so obtained are in good agreement with those reported in the literature, whenever a comparison is meaningful.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-50"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72898030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimized algorithms for three-dimensional cellular topography simulation 三维细胞地形模拟的优化算法
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449177
W. Pyka;R. Martins;S. Selberherr
{"title":"Optimized algorithms for three-dimensional cellular topography simulation","authors":"W. Pyka;R. Martins;S. Selberherr","doi":"10.1109/TCAD.1996.6449177","DOIUrl":"10.1109/TCAD.1996.6449177","url":null,"abstract":"The reduction of computing time without loss of accuracy is a very important task for three-dimensional process simulation. We present new approaches for fast and stable simulation of etching and deposition processes by introducing non spherical structuring element algorithms to our morphological operation based cellular topography simulator. We demonstrate improvements and accelerations for a wide variety of etching and deposition models such as isotropic deposition, uni-directional etching, lithography development simulation, sputter deposition and reactive ion etching. we also draw comparisons with the originally implemented algorithm and other approaches such as the level set method. furthermore we show a fast, physically based, and accurate three-dimensional simulation of tin sputter deposition and, by means of a two metal layer interconnect structure, we demonstrate an efficient generation of three-dimensional geometries directly including layout information and photolithography simulation.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-39"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86815000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The role of boron segregation and transient enhanced diffusion on reverse short channel effect 硼偏析和瞬态强化扩散对反向短通道效应的影响
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449171
C. Machala;R. Wise;D. Mercer;A. Chatterjee
{"title":"The role of boron segregation and transient enhanced diffusion on reverse short channel effect","authors":"C. Machala;R. Wise;D. Mercer;A. Chatterjee","doi":"10.1109/TCAD.1996.6449171","DOIUrl":"10.1109/TCAD.1996.6449171","url":null,"abstract":"This paper presents the results of an experiment that examines the effects of standard channel formation process steps on boron channel profiles. The experiment is specifically designed to determine the role of various processing steps on reverse short channel effect (RSCE). In the experiment defect-free silicon films, uniformly doped with boron, were grown epitaxially. The samples were then subjected to the processing steps associated with channel profile formation. A gate oxide was grown, then silicon was implanted to simulate the damage due to a source/drain implant. Finally, a damage anneal was done. The resultant experimental dopant profiles as measured using SIMS reveal an important effect which may cause reverse short channel effect. Boron segregation during gate oxidation significantly reduces the boron concentration near the silicon-oxide interface. Subsequent diffusions show that in the presence of damage, the transient enhanced diffusion of boron refills the dopant lost during segregation. In the absence of damage, the profile remains as it was after gate oxidation.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122042222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A hybrid technique for TCAD modeling and optimization TCAD建模与优化的混合技术
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 DOI: 10.1007/978-3-7091-6827-1_21
B. Govoreanu, W. Schocnmaker, G. Kopalidis, G. Dima, O. Mitrea, M. Profircscu
{"title":"A hybrid technique for TCAD modeling and optimization","authors":"B. Govoreanu, W. Schocnmaker, G. Kopalidis, G. Dima, O. Mitrea, M. Profircscu","doi":"10.1007/978-3-7091-6827-1_21","DOIUrl":"https://doi.org/10.1007/978-3-7091-6827-1_21","url":null,"abstract":"","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"67 1","pages":"1-9"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72913445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Convergence estimation for stationary ensemble Monte Carlo simulations 稳态集合蒙特卡罗模拟的收敛估计
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449167
C. Jungemann;S. Yamaguchi;H. Goto
{"title":"Convergence estimation for stationary ensemble Monte Carlo simulations","authors":"C. Jungemann;S. Yamaguchi;H. Goto","doi":"10.1109/TCAD.1996.6449167","DOIUrl":"10.1109/TCAD.1996.6449167","url":null,"abstract":"A criterion for the convergence of the stochastic Monte Carlo simulations is necessary to ensure the reliability of their results and to guarantee efficiency. Due to the finite scattering rate in Monte Carlo simulations all quantities are in general correlated in time. This makes the estimation of the stochastic error of the sampled statistics difficult. In this work the theoretical basis of a method found in literature is explored which allows to calculate the stochastic error of stationary Ensemble Monte Carlo simulations and which requires only a rough estimate of the magnitude of the largest correlation time of the sampled quantities. The feasibility of the method is demonstrated by application to substrate current calculations for nMOSFETs.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76461212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Time-integration and iterative techniques for semiconductor diffusion modeling 半导体扩散建模的时间积分和迭代技术
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449172
Anand L. Pardhanani;Graham F. Carey
{"title":"Time-integration and iterative techniques for semiconductor diffusion modeling","authors":"Anand L. Pardhanani;Graham F. Carey","doi":"10.1109/TCAD.1996.6449172","DOIUrl":"10.1109/TCAD.1996.6449172","url":null,"abstract":"We investigate numerical integration, preconditioning, iterative solution and multigrid strategies for a class of réaction-diffusion systems used for modeling nonequilibrium phosphorus diffusion in silicon. These problems typically yield stiff systems of equations, and their efficient numerical simulation requires the use of stable integration strategies along with fast, robust algebraic system solvers. We compare the numerical performance of semi-implicit Runge-Kutta methods in conjunction with several standard nonsymmetric iterative solvers and multigrid methods. Our results demonstrate that block-diagonal preconditioning with node-based assembly of the discrete system dramatically improves the performance of iterative solvers. Numerical studies also reveal some interesting new aspects regarding the choice of integration schemes when using iterative methods to solve the linear systems. Unlike the case of direct solvers, where higher-order integration methods typically yield higher computational efficiency, the use of iterative solvers can significantly change or even reverse this trend.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-12"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78822728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AMIGOS: Analytical model interface & general object-oriented solver AMIGOS：分析模型接口&通用面向对象求解器
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449174
M. Radi;E. Leitner;S. Selberherr
{"title":"AMIGOS: Analytical model interface & general object-oriented solver","authors":"M. Radi;E. Leitner;S. Selberherr","doi":"10.1109/TCAD.1996.6449174","DOIUrl":"10.1109/TCAD.1996.6449174","url":null,"abstract":"To accurately simulate modern semiconductor process steps, a simulation tool must include a variety of physical models and numerical methods. Increasingly complex physical formulations are required to account for effects that were not important in simulating previous generations of technology. Thus flexibility in definition of models as well as numerical solving methods is highly desirable. An object-oriented approach has been applied to implementing a dimension independent solver which uses an analytical input interface in the manner of Math-Cad, Mathematica, Matlab but highly optimized for numerical calculations of partial differential equations for complex simulation domains. It is equipped with a numerical solver, that supports direct and iterative solution methods, as well as an adaptive hierarchical grid adaptation algorithm which can be controlled by the analytical input language. To show the abilities of AMIGOS several examples in different dimensions are demonstrated.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-72"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123535772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
VLSI performance metric based on minimum TCAD simulations 基于最小TCAD仿真的VLSI性能度量
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449169
G. Schrom;V. De;S. Selberherr
{"title":"VLSI performance metric based on minimum TCAD simulations","authors":"G. Schrom;V. De;S. Selberherr","doi":"10.1109/TCAD.1996.6449169","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449169","url":null,"abstract":"A new approach to performance metrology and qualification of digital VLSI processes with TCAD simulations is proposed. The method yields performance data on the system level directly from raw electrical device data obtained with a minimum set of device simulations. The key performance and qualification parameters are identified, pointing out the differences between these and traditional device performance metrics, and the methods to determine these parameters from the device data are described.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-29"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148452006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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