Journal of Technology Computer Aided Design TCAD最新文献

The role of boron segregation and transient enhanced diffusion on reverse short channel effect 硼偏析和瞬态强化扩散对反向短通道效应的影响

Journal of Technology Computer Aided Design TCAD Pub Date : 1997-09-08 DOI: 10.1109/SISPAD.1997.621357

C. Machala, R. Wise, D. Mercer, A. Chatterjee

引用次数: 4

VLSI performance metric based on minimum TCAD simulations 基于最小TCAD仿真的VLSI性能度量

Journal of Technology Computer Aided Design TCAD Pub Date : 1997-09-08 DOI: 10.1016/S0920-5489(99)92304-8

G. Schrom, V. De, S. Selberherr

引用次数: 2

A computationally efficient ion implantation damage model and its application to multiple implant simulations 一种计算效率高的离子注入损伤模型及其在多离子注入模拟中的应用

Journal of Technology Computer Aided Design TCAD Pub Date : 1997-09-08 DOI: 10.1109/SISPAD.1997.621399

G. Wang, S. Tian, M. Morris, B. Obradovic, G. Balamurugan, A. Tasch, S. Morris, H. Kennel, P. Packan, C. Magee, J. Sheng, R. Lowther, J. Linn, C. Snell

引用次数: 2

Convergence estimation for stationary ensemble Monte Carlo simulations 稳态集合蒙特卡罗模拟的收敛估计

Journal of Technology Computer Aided Design TCAD Pub Date : 1997-09-08 DOI: 10.1109/TCAD.1996.6449167

Christoph Jungemann, S. Yamaguchi, H. Goto

引用次数: 13

A computationally efficient target search algorithm for a Monte Carlo ion implantation simulator 一种计算效率高的蒙特卡罗离子注入模拟器目标搜索算法

Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 DOI: 10.1109/TCAD.1996.6449179

G. Wang, B. Obradovic, Y. Chen, D. Li, S. Oak, G. Srivastav, S. Banerjee, A. Tasch

{"title":"A computationally efficient target search algorithm for a Monte Carlo ion implantation simulator","authors":"G. Wang, B. Obradovic, Y. Chen, D. Li, S. Oak, G. Srivastav, S. Banerjee, A. Tasch","doi":"10.1109/TCAD.1996.6449179","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449179","url":null,"abstract":"Ion implantation is a critical technology in semiconductor Ultra Large Scale Integration (ULSI). Binary collision approximation (BCA)-based Monte Carlo (MC) ion implantation simulators are commonly used to predict the impurity and damage profiles. A deterministic propagator is needed in these simulators to simulate the propagation of ions in crystalline materials. A search-for-target algorithm is frequently called to determine the collision partners and collision parameters in a deterministic propagator, and this is usually the computational bottleneck of MC ion implantation simulators. The standard search-for-target algorithm has been redesigned for computational efficiency and for economic usage of memory. Instead of searching for collision partners in a standard 29-atom crystal neighborhood identical to all ions, narrowed-down potential target lists are pre-computed based on the ion's relative position to a reference point as well as its direction of motion. The American National Standards Institution (ANSI) C++ standard container class bitset [1] is used to store such potential target lists, and the memory usage is very efficient. Combined with a quasi-simultaneous collision algorithm, the CPU times for MeV P and B implantation simulations are found to be reduced by more than a factor of two, rendering very reasonable computation times for MeV ion implantation simulations on standard workstations.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"73 1","pages":"1-19"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80458378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

TCAD-based simulation of hot-carrier degradation in p-channel mosfets using silicon energy-balance and oxide carrier-transport equations 基于硅能量平衡和氧化物载流子输运方程的p沟道mosfet热载流子降解tcad模拟

Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 DOI: 10.1109/TCAD.1996.6449178

S. Mukundan, M. Pagey, C. Cirba, peixiong zhao, K. Galloway

引用次数: 0

Tilt angle effect on DC and AC performance of Halo PMOS 倾斜角度对Halo PMOS直流和交流性能的影响

Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 DOI: 10.1109/TCAD.1996.6449173

Jlong-Guang Su, S. Wong, Daisy Lee, Chi-Tsung Huang, B. Tsui

引用次数: 1

Fully unstructured Delaunay mesh generation using a modified advancing front approach for applications in technology cad 完全非结构化的德劳内网格生成使用改进的先进前沿方法在技术cad中的应用

Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 DOI: 10.1109/TCAD.1996.6449165

P. Fleischmann, S. Selberherr

引用次数: 2

Monte Carlo simulation of heavy species (Indium and Germanium) ion implantation into silicon 重离子(铟和锗)注入硅的蒙特卡罗模拟

Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 DOI: 10.1109/TCAD.1996.6449175

Y. Chen, B. Obradovic, M. Morris, G. Wang, G. Balamurugan, D. Li, A. Tasch, D. Kamenitsa, W. McCoy, S. Baumann, R. Bleier, D. Sieloff, D. Dyer, P. Zeitzoff

引用次数: 1

Phase space multiple refresh: A general purpose statistical enhancement technique for Monte Carlo device simulation 相空间多重刷新:一种用于蒙特卡罗器件仿真的通用统计增强技术

Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 DOI: 10.1109/TCAD.1996.6449159

C. Jungemann, S. Decker, R. Thoma, W.-L. Engh, Hiroshi Goto

{"title":"Phase space multiple refresh: A general purpose statistical enhancement technique for Monte Carlo device simulation","authors":"C. Jungemann, S. Decker, R. Thoma, W.-L. Engh, Hiroshi Goto","doi":"10.1109/TCAD.1996.6449159","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449159","url":null,"abstract":"A new Multiple Refresh technique is presented, which can be applied to the enhancement of statistics in phase space during Monte Carlo device simulation without being restricted to ergodic or stationary systems. The method allows to specify the number of particles simulated in different regions of phase space and therefore to control directly the noise in those regions. It can improve the statistics of rare events like for example hot electron effects by many orders of magnitude without prohibitive CPU times. The problem of noise and correlation inherent to statistical enhancement methods which manipulate particle numbers is minimized. It is shown that the method does not impair the one particle distribution function and that it is more stable in a stochastic sense than other equally general methods, because it conserves particle charge exactly. The method itself consumes only a few percent of the total CPU time spent for a simulation and does not cause any computational overhead in parallel calculations. The method is very flexible and easy to apply, because it acts only on the particle ensemble at certain times and does not interfere with the Monte Carlo simulation itself. The potential of the Multiple Refresh technique is demonstrated for different important device applications.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"29 1","pages":"1-24"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89134262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12