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The role of boron segregation and transient enhanced diffusion on reverse short channel effect 硼偏析和瞬态强化扩散对反向短通道效应的影响
Journal of Technology Computer Aided Design TCAD Pub Date : 1997-09-08 DOI: 10.1109/SISPAD.1997.621357
C. Machala, R. Wise, D. Mercer, A. Chatterjee
{"title":"The role of boron segregation and transient enhanced diffusion on reverse short channel effect","authors":"C. Machala, R. Wise, D. Mercer, A. Chatterjee","doi":"10.1109/SISPAD.1997.621357","DOIUrl":"https://doi.org/10.1109/SISPAD.1997.621357","url":null,"abstract":"This paper presents the results of an experiment that examines the effects of standard channel formation process steps on boron channel profiles. The experiment is specifically designed to determine the role of various processing steps on reverse short channel effect (RSCE). In the experiment defect-free silicon films, uniformly doped with boron, were grown epitaxially. The samples were then subjected to the processing steps associated with channel profile formation. A gate oxide was grown, then silicon was implanted to simulate the damage due to a source/drain implant. Finally, a damage anneal was done. The resultant experimental dopant profiles as measured using SIMS reveal an important effect which may cause reverse short channel effect. Boron segregation during gate oxidation significantly reduces the boron concentration near the silicon-oxide interface. Subsequent diffusions show that in the presence of damage, the transient enhanced diffusion of boron refills the dopant lost during segregation. In the absence of damage, the profile remains as it was after gate oxidation.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"2 3 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"1997-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79352986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
VLSI performance metric based on minimum TCAD simulations 基于最小TCAD仿真的VLSI性能度量
Journal of Technology Computer Aided Design TCAD Pub Date : 1997-09-08 DOI: 10.1016/S0920-5489(99)92304-8
G. Schrom, V. De, S. Selberherr
{"title":"VLSI performance metric based on minimum TCAD simulations","authors":"G. Schrom, V. De, S. Selberherr","doi":"10.1016/S0920-5489(99)92304-8","DOIUrl":"https://doi.org/10.1016/S0920-5489(99)92304-8","url":null,"abstract":"","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"27 1","pages":"1-29"},"PeriodicalIF":0.0,"publicationDate":"1997-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73425520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A computationally efficient ion implantation damage model and its application to multiple implant simulations 一种计算效率高的离子注入损伤模型及其在多离子注入模拟中的应用
Journal of Technology Computer Aided Design TCAD Pub Date : 1997-09-08 DOI: 10.1109/SISPAD.1997.621399
G. Wang, S. Tian, M. Morris, B. Obradovic, G. Balamurugan, A. Tasch, S. Morris, H. Kennel, P. Packan, C. Magee, J. Sheng, R. Lowther, J. Linn, C. Snell
{"title":"A computationally efficient ion implantation damage model and its application to multiple implant simulations","authors":"G. Wang, S. Tian, M. Morris, B. Obradovic, G. Balamurugan, A. Tasch, S. Morris, H. Kennel, P. Packan, C. Magee, J. Sheng, R. Lowther, J. Linn, C. Snell","doi":"10.1109/SISPAD.1997.621399","DOIUrl":"https://doi.org/10.1109/SISPAD.1997.621399","url":null,"abstract":"A computationally efficient ion implantation cumulative damage model has recently been developed and implemented in UT-MARLOWE Versions 4.0 and 4.1. Based on the modified Kinchin-Pease formula, this model accounts for damage generation and accumulation, defect encounters and amorphization in a simplified way. Good agreement with experimental impurity profiles has been obtained for As, B, BF2 and P implants in single-crystal silicon. In addition, the amorphous layer thicknesses obtained in this model are also in reasonable agreement with experimental measurements. Based on this damage model, a simple but extremely powerful and general method for performing multiple implant simulations has been developed, and very good agreement with experimental data has been obtained.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"54 1","pages":"1-40"},"PeriodicalIF":0.0,"publicationDate":"1997-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85516667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A computationally efficient target search algorithm for a Monte Carlo ion implantation simulator 一种计算效率高的蒙特卡罗离子注入模拟器目标搜索算法
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449179
G. Wang;B. Obradovic;Y. Chen;D. Li;S. Oak;G. Srivastav;S. Banerjee;A. Tasch
{"title":"A computationally efficient target search algorithm for a Monte Carlo ion implantation simulator","authors":"G. Wang;B. Obradovic;Y. Chen;D. Li;S. Oak;G. Srivastav;S. Banerjee;A. Tasch","doi":"10.1109/TCAD.1996.6449179","DOIUrl":"10.1109/TCAD.1996.6449179","url":null,"abstract":"Ion implantation is a critical technology in semiconductor Ultra Large Scale Integration (ULSI). Binary collision approximation (BCA)-based Monte Carlo (MC) ion implantation simulators are commonly used to predict the impurity and damage profiles. A deterministic propagator is needed in these simulators to simulate the propagation of ions in crystalline materials. A search-for-target algorithm is frequently called to determine the collision partners and collision parameters in a deterministic propagator, and this is usually the computational bottleneck of MC ion implantation simulators. The standard search-for-target algorithm has been redesigned for computational efficiency and for economic usage of memory. Instead of searching for collision partners in a standard 29-atom crystal neighborhood identical to all ions, narrowed-down potential target lists are pre-computed based on the ion's relative position to a reference point as well as its direction of motion. The American National Standards Institution (ANSI) C++ standard container class bitset [1] is used to store such potential target lists, and the memory usage is very efficient. Combined with a quasi-simultaneous collision algorithm, the CPU times for MeV P and B implantation simulations are found to be reduced by more than a factor of two, rendering very reasonable computation times for MeV ion implantation simulations on standard workstations.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-19"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80458378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theory and implementation of a new interpolation method based on random sampling 一种新的基于随机抽样的插值方法的原理与实现
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449161
Wim Schoenmaker;Rudi Cartuyvels
{"title":"Theory and implementation of a new interpolation method based on random sampling","authors":"Wim Schoenmaker;Rudi Cartuyvels","doi":"10.1109/TCAD.1996.6449161","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449161","url":null,"abstract":"In this paper we present a new method for the interpolation of functions using Feynman path integrals. It is argued that least-biased interpolations are obtained. The interpolation method is essentially numerical and an algorithm is given for determining the interpolation values. The core of the method is the identification of the interpolation values as expectation values of a random function. The expectation values are obtained by a Metropolis algorithm. The method is illustrated with a number of examples and an application in TCAD.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-35"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148451994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
VLSI performance metric based on minimum TCAD simulations 基于最小TCAD仿真的VLSI性能度量
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449169
G. Schrom;V. De;S. Selberherr
{"title":"VLSI performance metric based on minimum TCAD simulations","authors":"G. Schrom;V. De;S. Selberherr","doi":"10.1109/TCAD.1996.6449169","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449169","url":null,"abstract":"A new approach to performance metrology and qualification of digital VLSI processes with TCAD simulations is proposed. The method yields performance data on the system level directly from raw electrical device data obtained with a minimum set of device simulations. The key performance and qualification parameters are identified, pointing out the differences between these and traditional device performance metrics, and the methods to determine these parameters from the device data are described.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-29"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148452114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TCAD-based simulation of hot-carrier degradation in p-channel mosfets using silicon energy-balance and oxide carrier-transport equations 基于硅能量平衡和氧化物载流子输运方程的p沟道mosfet热载流子降解tcad模拟
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449178
S. K. Mukundan;M. P. Pagey;C. R. Cirba;R. D. Schrimpf;K. F. Galloway
{"title":"TCAD-based simulation of hot-carrier degradation in p-channel mosfets using silicon energy-balance and oxide carrier-transport equations","authors":"S. K. Mukundan;M. P. Pagey;C. R. Cirba;R. D. Schrimpf;K. F. Galloway","doi":"10.1109/TCAD.1996.6449178","DOIUrl":"10.1109/TCAD.1996.6449178","url":null,"abstract":"We present a TCAD-based approach for characterizing hot-carrier degradation in p-channel MOSFETs that includes models for hot-electron injection, carrier transport, and electron trapping in the oxide. The energy-balance equations have been solved in the silicon substrate to accurately model the carrier-heating and injection processes. This approach clearly illustrates the physical mechanisms responsible for hot-carrier degradation in p-channel MOSFETs. The simulations have been compared with experimental data obtained from 0.8μm SOI pMOS devices and show an excellent match.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-13"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75331451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A computationally efficient ion implantation damage model and its application to multiple implant simulations 一种计算效率高的离子注入损伤模型及其在多离子注入模拟中的应用
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449170
G. Wang;S. Tian;M. Morris;B. Obradovic;G. Balamurugan;A. Tasch;S. Morris;H. Kennel;P. Packan;C. Magee;J. Sheng;R. Lowther;J. Linn;C. Snell
{"title":"A computationally efficient ion implantation damage model and its application to multiple implant simulations","authors":"G. Wang;S. Tian;M. Morris;B. Obradovic;G. Balamurugan;A. Tasch;S. Morris;H. Kennel;P. Packan;C. Magee;J. Sheng;R. Lowther;J. Linn;C. Snell","doi":"10.1109/TCAD.1996.6449170","DOIUrl":"10.1109/TCAD.1996.6449170","url":null,"abstract":"A computationally efficient ion implantation cumulative damage model has recently been developed and implemented in UT-MARLOWE Versions 4.0 and 4.1. Based on the modified Kinchin-Pease formula, this model accounts for damage generation and accumulation, defect encounters and amorphization in a simplified way. Good agreement with experimental impurity profiles has been obtained for As, B, BF<inf>2</inf> and P implants in single-crystal silicon. In addition, the amorphous layer thicknesses obtained in this model are also in reasonable agreement with experimental measurements. Based on this damage model, a simple but extremely powerful and general method for performing multiple implant simulations has been developed, and very good agreement with experimental data has been obtained.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-40"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114793133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monte Carlo simulation of heavy species (Indium and Germanium) ion implantation into silicon 重离子（铟和锗）注入硅的蒙特卡罗模拟
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449175
Y. Chen;B. Obradovic;M. Morris;G. Wang;G. Balamurugan;D. Li;A. F. Tasch;D. Kamenitsa;W. McCoy;S. Baumann;R. Bleier;D. Sieloff;D. Dyer;P. Zeitzoff
{"title":"Monte Carlo simulation of heavy species (Indium and Germanium) ion implantation into silicon","authors":"Y. Chen;B. Obradovic;M. Morris;G. Wang;G. Balamurugan;D. Li;A. F. Tasch;D. Kamenitsa;W. McCoy;S. Baumann;R. Bleier;D. Sieloff;D. Dyer;P. Zeitzoff","doi":"10.1109/TCAD.1996.6449175","DOIUrl":"10.1109/TCAD.1996.6449175","url":null,"abstract":"Monte Carlo ion-implant models for germanium and indium implantation into single-crystal silicon have been developed and are described in this paper. The models have been incorporated in the UT-MARLOWE ion implantation simulator, and have been developed primarily for use on engineering workstations. These models provide the required as-implanted impurity profiles as well as damage profiles, which can be used as inputs for transient enhanced diffusion simulation and subsequent multiple implant simulation. A comparison of simulation results with experimental data shows that the models predict both the impurity profiles and the damage profiles very successfully for a wide range of implant conditions. The damage profiles from germanium implant simulations have been used for subsequent multiple implant simulations and excellent agreement with experimental results has been achieved.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-20"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74815027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fully unstructured Delaunay mesh generation using a modified advancing front approach for applications in technology cad 完全非结构化的德劳内网格生成使用改进的先进前沿方法在技术cad中的应用
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449165
Peter Fleischmann;Siegfried Selberherr
{"title":"Fully unstructured Delaunay mesh generation using a modified advancing front approach for applications in technology cad","authors":"Peter Fleischmann;Siegfried Selberherr","doi":"10.1109/TCAD.1996.6449165","DOIUrl":"10.1109/TCAD.1996.6449165","url":null,"abstract":"We introduce a combination of Delaunay methods with advancing front techniques especially suitable for local regridding and semiconductor simulation applications. element quality improvement can be handled by local mesh adaptation steps. the three-dimensional meshing algorithm is suitable for complicated structures, because of its fully unstructured nature. the resulting Delaunay mesh possesses the flexibility possible within the scope of a tetrahedral representation not like octree based or other cartesian meshes which are commonly employed in technology cad (TCAD).","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-38"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86922853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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