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Journal of Technology Computer Aided Design TCAD最新文献

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Phase space multiple refresh: A general purpose statistical enhancement technique for Monte Carlo device simulation 相空间多重刷新：一种用于蒙特卡罗器件仿真的通用统计增强技术
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449159
Chr. Jungemann;S. Decker;R. Thoma;W.-L. Engh;H. Goto
{"title":"Phase space multiple refresh: A general purpose statistical enhancement technique for Monte Carlo device simulation","authors":"Chr. Jungemann;S. Decker;R. Thoma;W.-L. Engh;H. Goto","doi":"10.1109/TCAD.1996.6449159","DOIUrl":"10.1109/TCAD.1996.6449159","url":null,"abstract":"A new Multiple Refresh technique is presented, which can be applied to the enhancement of statistics in phase space during Monte Carlo device simulation without being restricted to ergodic or stationary systems. The method allows to specify the number of particles simulated in different regions of phase space and therefore to control directly the noise in those regions. It can improve the statistics of rare events like for example hot electron effects by many orders of magnitude without prohibitive CPU times. The problem of noise and correlation inherent to statistical enhancement methods which manipulate particle numbers is minimized. It is shown that the method does not impair the one particle distribution function and that it is more stable in a stochastic sense than other equally general methods, because it conserves particle charge exactly. The method itself consumes only a few percent of the total CPU time spent for a simulation and does not cause any computational overhead in parallel calculations. The method is very flexible and easy to apply, because it acts only on the particle ensemble at certain times and does not interfere with the Monte Carlo simulation itself. The potential of the Multiple Refresh technique is demonstrated for different important device applications.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-24"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89134262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tilt angle effect on DC and AC performance of Halo PMOS 倾斜角度对Halo PMOS直流和交流性能的影响
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449173
Jlong-Guang Su;Shyh-Chyl Wong;Da-Yuan Lee;Chi-Tsung Huang;Bing-Yue Tsui
{"title":"Tilt angle effect on DC and AC performance of Halo PMOS","authors":"Jlong-Guang Su;Shyh-Chyl Wong;Da-Yuan Lee;Chi-Tsung Huang;Bing-Yue Tsui","doi":"10.1109/TCAD.1996.6449173","DOIUrl":"10.1109/TCAD.1996.6449173","url":null,"abstract":"Halo structure is usually adopted in deep submicron MOS devices for off-state leakage current reduction. Tilt angle of the Halo implant determines dopant distribution which gives anti-punchthrough operation. In this paper, we investigate the impact of tile angle on both DC and AC performance of Halo PMOS device via 2-D simulations. For DC performance, it is found that same conduction current is obtained for all tilt angles at same leakage current level. This performance equivalence can be traced back to a self compensation between body factor and source resistance, and implies that low tilt angle should be adopted for Halo devices, as it gives small threshold voltage and thus high noise margin. For AC performance, it is found that at same leakage current level, all tilt angles give same gate-to-drain capacitance and that lower tilt angle gives smaller drain-to-bulk junction capacitance.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-31"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89765605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Level set methods for etching, deposition and photolithography development 蚀刻、沉积和光刻显影的水平集方法
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449166
D. Adalsteinsson;J. A. Sethian
{"title":"Level set methods for etching, deposition and photolithography development","authors":"D. Adalsteinsson;J. A. Sethian","doi":"10.1109/TCAD.1996.6449166","DOIUrl":"10.1109/TCAD.1996.6449166","url":null,"abstract":"Level set techniques are numerical techniques for tracking moving interfaces, and have been applied to a wide collection of problems in front propagating and surface advancement. The techniques are robust, accurate, unbreakable, and extremely fast, and can be applied to highly complex two and three dimensional surface topography evolutions in etching, deposition, and photolithography, including sensitive flux/visibility integration laws, simultaneous etching and deposition, effects of non-convex sputter laws demonstrating faceting, as well as ion-sputtered re-deposition and re-emission with low sticking coefficients, and surface diffusion.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-67"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89701824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of quantum confinement effects in ultra-thin-oxide MOS structures 超薄氧化物MOS结构中量子约束效应的模拟
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449168
M. G. Ancona;Z. Yu;W.-C. Lee;R. W. Dutton;P.V. Voorde
{"title":"Simulation of quantum confinement effects in ultra-thin-oxide MOS structures","authors":"M. G. Ancona;Z. Yu;W.-C. Lee;R. W. Dutton;P.V. Voorde","doi":"10.1109/TCAD.1996.6449168","DOIUrl":"10.1109/TCAD.1996.6449168","url":null,"abstract":"The density-gradient approach to quantum transport theory is used to model the inversion layer profiles, threshold voltages and C-V characteristics of MOS capacitors with ultra-thin oxides and polysilicon gates. The results (without fitting parameters) are found to compare quite well with experimental data and with calculations made using quantum mechanics. Comparisons are also made with results obtained using previous phenomenological methods and these favor density-gradient theory as well, especially in its being physically meaningful and predictive. Overall, the results of this work show that density-gradient theory provides a physics-based approach to device modeling problems in which quantum confinement effects are significant that is simple enough for engineering applications.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-17"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90550189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A hybrid technique for TCAD modeling and optimization TCAD建模与优化的混合技术
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449176
B. Govoreanu;W. Schocnmaker;G. Kopalidis;G. Dima;O. Mitrea;M. Profircscu
{"title":"A hybrid technique for TCAD modeling and optimization","authors":"B. Govoreanu;W. Schocnmaker;G. Kopalidis;G. Dima;O. Mitrea;M. Profircscu","doi":"10.1109/TCAD.1996.6449176","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449176","url":null,"abstract":"This paper focuses on continuous simulated annealing global optimization method to be used in conjunction with statistical response surface modeling and powerful local optimization techniques to improve the design and analysis using TCAD.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-9"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148451996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theory and implementation of a new interpolation method based on random sampling 一种新的基于随机抽样的插值方法的原理与实现
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449161
Wim Schoenmaker;Rudi Cartuyvels
{"title":"Theory and implementation of a new interpolation method based on random sampling","authors":"Wim Schoenmaker;Rudi Cartuyvels","doi":"10.1109/TCAD.1996.6449161","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449161","url":null,"abstract":"In this paper we present a new method for the interpolation of functions using Feynman path integrals. It is argued that least-biased interpolations are obtained. The interpolation method is essentially numerical and an algorithm is given for determining the interpolation values. The core of the method is the identification of the interpolation values as expectation values of a random function. The expectation values are obtained by a Metropolis algorithm. The method is illustrated with a number of examples and an application in TCAD.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-35"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148452011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Three-dimensional photolithography simulation 三维光刻模拟
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449163
Heinrich Kirchauer;Siegfried Selberherr
{"title":"Three-dimensional photolithography simulation","authors":"Heinrich Kirchauer;Siegfried Selberherr","doi":"10.1109/TCAD.1996.6449163","DOIUrl":"10.1109/TCAD.1996.6449163","url":null,"abstract":"An overall three-dimensional photolithography simulator is presented, which has been developed for workstation based application. The simulator consists of three modules according to the fundamental processes of photolithography, namely imaging, exposure/bleaching and development. General illumination forms are taken into account. The nonlinear bleaching reaction of the photoresist is considered and electromagnetic light-scattering due to a nonplanar topography is treated by solving repeatedly the maxwell equations within an inhomogeneous medium. A novel extension of the two-dimensional differential method into the third dimension is presented and a numerically efficient implementation for exposure simulation under partial coherent illumination is described. the development process is simulated with a cellular based surface advancement algorithm.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-37"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75953616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A single-electron device and circuit simulator with a new algorithm to incorporate co-tunneling 采用新算法的单电子器件和电路模拟器
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449164
Christoph Wasshuber;Hans Kosina;Siegfried Selberherr
{"title":"A single-electron device and circuit simulator with a new algorithm to incorporate co-tunneling","authors":"Christoph Wasshuber;Hans Kosina;Siegfried Selberherr","doi":"10.1109/TCAD.1996.6449164","DOIUrl":"10.1109/TCAD.1996.6449164","url":null,"abstract":"A multipurpose single-electron device and circuit simulator is presented, with which it is possible to simulate a wide variety of single-electron devices. the simulator features among others the incorporation of co-tunneling by two different simulation methods, a graphical user interface and a graphical circuit editor. A new algorithm for the simulation of very rare events, where a Monte Carlo method is combined with a direct calculation, is outlined in detail.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-18"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90183368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A hybrid technique for TCAD modeling and optimization TCAD建模与优化的混合技术
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449176
B. Govoreanu;W. Schocnmaker;G. Kopalidis;G. Dima;O. Mitrea;M. Profircscu
{"title":"A hybrid technique for TCAD modeling and optimization","authors":"B. Govoreanu;W. Schocnmaker;G. Kopalidis;G. Dima;O. Mitrea;M. Profircscu","doi":"10.1109/TCAD.1996.6449176","DOIUrl":"https://doi.org/10.1109/TCAD.1996.6449176","url":null,"abstract":"This paper focuses on continuous simulated annealing global optimization method to be used in conjunction with statistical response surface modeling and powerful local optimization techniques to improve the design and analysis using TCAD.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-9"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148451887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-level TCAD task representation and automation 高级TCAD任务表示和自动化
Journal of Technology Computer Aided Design TCAD Pub Date : 1996-01-01 Epub Date: 2013-02-11 DOI: 10.1109/TCAD.1996.6449162
Christoph Pichler;Richard Plasun;Rudolf Strasser;Siegfried Selberherr
{"title":"High-level TCAD task representation and automation","authors":"Christoph Pichler;Richard Plasun;Rudolf Strasser;Siegfried Selberherr","doi":"10.1109/TCAD.1996.6449162","DOIUrl":"10.1109/TCAD.1996.6449162","url":null,"abstract":"With shrinking device dimensions and decreasing product-development cycles, fully-automated TCAD analysis of complete semiconductor processes and devices is becoming increasingly important. We present a programmable simulation environment for VLSI technology analysis, focusing on high-level tasks including response surface modeling (RSM) and optimization. Based on process and device simulation capabilities with heterogeneous simulation tools, split-lot experiments can be defined for fabrication process flows and simulation sequences. The parallel and distributed execution of independent split tree branches allow a fast computation of large-scale experiments. A persistent run data base keeps all simulation results and prevents unnecessary re-computations. Special emphasis has been put on establishing in an object-oriented fashion a uniform and easy-to-use interface for applications and extensions supplied by the user. the combination of a comfortable, intuitive visual user interface with the flexibility and versatility of a high-level programming language for TCAD applications results in a powerful tool for tcad integration, development, and production use.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":" ","pages":"1-30"},"PeriodicalIF":0.0,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85239918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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