High-level TCAD task representation and automation

C. Pichler, R. Plasun, R. Strasser, S. Selberherr
{"title":"High-level TCAD task representation and automation","authors":"C. Pichler, R. Plasun, R. Strasser, S. Selberherr","doi":"10.1109/TCAD.1996.6449162","DOIUrl":null,"url":null,"abstract":"With shrinking device dimensions and decreasing product-development cycles, fully-automated TCAD analysis of complete semiconductor processes and devices is becoming increasingly important. We present a programmable simulation environment for VLSI technology analysis, focusing on high-level tasks including response surface modeling (RSM) and optimization. Based on process and device simulation capabilities with heterogeneous simulation tools, split-lot experiments can be defined for fabrication process flows and simulation sequences. The parallel and distributed execution of independent split tree branches allow a fast computation of large-scale experiments. A persistent run data base keeps all simulation results and prevents unnecessary re-computations. Special emphasis has been put on establishing in an object-oriented fashion a uniform and easy-to-use interface for applications and extensions supplied by the user. the combination of a comfortable, intuitive visual user interface with the flexibility and versatility of a high-level programming language for TCAD applications results in a powerful tool for tcad integration, development, and production use.","PeriodicalId":100835,"journal":{"name":"Journal of Technology Computer Aided Design TCAD","volume":"56 1","pages":"1-30"},"PeriodicalIF":0.0000,"publicationDate":"1996-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Technology Computer Aided Design TCAD","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TCAD.1996.6449162","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

With shrinking device dimensions and decreasing product-development cycles, fully-automated TCAD analysis of complete semiconductor processes and devices is becoming increasingly important. We present a programmable simulation environment for VLSI technology analysis, focusing on high-level tasks including response surface modeling (RSM) and optimization. Based on process and device simulation capabilities with heterogeneous simulation tools, split-lot experiments can be defined for fabrication process flows and simulation sequences. The parallel and distributed execution of independent split tree branches allow a fast computation of large-scale experiments. A persistent run data base keeps all simulation results and prevents unnecessary re-computations. Special emphasis has been put on establishing in an object-oriented fashion a uniform and easy-to-use interface for applications and extensions supplied by the user. the combination of a comfortable, intuitive visual user interface with the flexibility and versatility of a high-level programming language for TCAD applications results in a powerful tool for tcad integration, development, and production use.
高级TCAD任务表示和自动化
随着器件尺寸的缩小和产品开发周期的缩短,完整半导体工艺和器件的全自动TCAD分析变得越来越重要。我们提出了一个用于VLSI技术分析的可编程仿真环境,重点关注包括响应面建模(RSM)和优化在内的高级任务。基于异构仿真工具的工艺和器件仿真能力,可以为制造工艺流程和仿真序列定义分批实验。独立分割树分支的并行和分布式执行允许大规模实验的快速计算。持久运行的数据库保存所有模拟结果,并防止不必要的重新计算。特别强调以面向对象的方式为用户提供的应用程序和扩展建立统一且易于使用的接口。将舒适、直观的可视化用户界面与用于TCAD应用程序的高级编程语言的灵活性和多功能性相结合,形成了用于TCAD集成、开发和生产使用的强大工具。
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