Advanced Physics Research最新文献_第8页

Increasing the Magnetic Transition Dipole Moment of Chiral Perovskite Through Eu3+ Doping 通过掺杂 Eu3+ 增加手性过氧化物的磁转变偶极矩

Advanced Physics Research Pub Date : 2024-09-19 DOI: 10.1002/apxr.202400064

Zhichao Zeng, Haolin Lu, Zhengwei Yang, Haolin Wu, Chuang Zhang, Guankui Long, Yaping Du

{"title":"Increasing the Magnetic Transition Dipole Moment of Chiral Perovskite Through Eu3+ Doping","authors":"Zhichao Zeng, Haolin Lu, Zhengwei Yang, Haolin Wu, Chuang Zhang, Guankui Long, Yaping Du","doi":"10.1002/apxr.202400064","DOIUrl":"https://doi.org/10.1002/apxr.202400064","url":null,"abstract":"Chiral hybrid organic-inorganic perovskites (HOIPs) are widely investigated due to their superior chiroptical and chiral spintronic properties. Research on the enhancement of chiroptical performance is highly important for the real application of chiral HOIPs. This work employed a rare earth doping strategy to increase the magnetic transition dipole moment of chiral 2D HOIPs R-/S-NPB (NPB = 1-(1-naphthyl) ethylammonium lead bromide). Doping with Eu3+ does not change the original layered NPB microstructure, and R-/S-NPB-Eu exhibited the magnetic dipole-allowed transition luminescence of Eu3+ at 594 nm (5D0→7F1). Circular polarized luminescence (CPL) spectra combined with theoretical calculations and transient photoluminescence measurements indicated that the introduction of Eu3+ can enhance the magnetic transition dipole moment of R-/S-NPB, thus resulting in an unprecedented glum of 0.05. To the best of our knowledge, this is the highest value for chiral perovskite films. This work combines the unique and superior optoelectronic properties of rare-earth ions with chiral perovskite and develops an efficient strategy to increase its anisotropy factor, which can accelerate the development of chiral optoelectronics and spintronics towards real application.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"3 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400064","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142861688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Broadband THz Wave Generation and Detection in Organic Crystal PNPA at MHz Repetition Rates MHz重复频率下有机晶体PNPA宽带太赫兹波的产生与检测

Advanced Physics Research Pub Date : 2024-09-19 DOI: 10.1002/apxr.202400105

Lukasz A. Sterczewski, Jakub Mnich, Jaroslaw Sotor

{"title":"Broadband THz Wave Generation and Detection in Organic Crystal PNPA at MHz Repetition Rates","authors":"Lukasz A. Sterczewski, Jakub Mnich, Jaroslaw Sotor","doi":"10.1002/apxr.202400105","DOIUrl":"https://doi.org/10.1002/apxr.202400105","url":null,"abstract":"Organic nonlinear optical (NLO) crystals have emerged as efficient room-temperature emitters of broadband THz radiation with high electric field strengths. Although initially confined to high-pulse-energy excitation in the millijoule range with kHz rates, recent efforts have focused on tailoring the physical properties of organic NLO materials for compatibility with popular MHz-rate telecommunication wavelength lasers emitting nanojoule energy pulses. This is motivated by the large potential of such crystals for more portable and user-safe spectroscopic systems, additionally complemented by their room-temperature field-sensitive THz detection capabilities. In this work, the MHz-rate operation of the organic crystal PNPA ((E)-4-((4-nitrobenzylidene)amino)-N-phenylaniline), which was recently discovered through data mining algorithms and reported to surpass the conversion efficiency of rivaling NLO crystals at 1 kHz repetition rate is demonstrated. Using a compact 200 mW Er:fiber laser producing 18 fs pulses at 50 MHz repetition rate, the THz field generation and detection capabilities of PNPA via performing gas phase spectroscopy in the 1.3–8.5 THz range are demonstrated. A dynamic range of 40 dB over 3.6 s and 70 dB over 2 h is obtained. The work extends the family of organic crystals compatible with telecommunication-wavelength excitation using nJ pulses for spectroscopy beyond 5 THz.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400105","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143381053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Masthead (Adv. Phys. Res. 9/2024) 刊头 (Adv. Phys. Res. 9/2024)

Advanced Physics Research Pub Date : 2024-09-10 DOI: 10.1002/apxr.202470021

引用次数: 0

Engineering Epsilon-Near-Zero Media with Waveguides (Adv. Phys. Res. 9/2024) 利用波导实现ε-近零介质工程（Adv. Phys. Res. 9/2024）

Advanced Physics Research Pub Date : 2024-09-10 DOI: 10.1002/apxr.202470020

Peihang Li, Wendi Yan, Shuyu Wang, Pengyu Fu, Yongjian Zhang, Yue Li

引用次数: 0

Terahertz Metasurfaces for Polarization Manipulation and Detection: Principles and Emerging Applications 用于偏振操纵和检测的太赫兹超表面：原理和新兴应用

Advanced Physics Research Pub Date : 2024-09-08 DOI: 10.1002/apxr.202400100

Yongliang Liu, Yifei Xu, Bo Yu, Wenwei Liu, Zhengren Zhang, Hua Cheng, Shuqi Chen

{"title":"Terahertz Metasurfaces for Polarization Manipulation and Detection: Principles and Emerging Applications","authors":"Yongliang Liu, Yifei Xu, Bo Yu, Wenwei Liu, Zhengren Zhang, Hua Cheng, Shuqi Chen","doi":"10.1002/apxr.202400100","DOIUrl":"https://doi.org/10.1002/apxr.202400100","url":null,"abstract":"Terahertz frequencies locating between microwave and infrared regions can record and process optical information for next-generation information technology such as 6G communication. Metasurfaces, as emerging planar optical components built with micro- or nanostructures, enable precise control, and manipulation of electromagnetic waves from near fields to far fields. These subwavelength artificial structures can be engineered to exhibit specific polarization responses, thus holding significant potential for applications in polarization detection. In the terahertz (THz) region, polarization information is crucial for identifying and analyzing the properties of materials in the terahertz. In this review, we focus on recent advances in terahertz metasurfaces for polarization manipulation and detection, including principles and emerging applications. New polarization detection methods such as polarization state conversion, polarization-selective absorption, polarization-selective focusing, and vector beam construction are discussed. Finally, it is concluded with a few perspectives on emerging trends and existing challenges in the fields of terahertz polarization manipulation and detection.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400100","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143380325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual-Mode Optical Thermometers Based on the Thermal-Stable Perovskite Nanocrystals Embedded in Robust Metal Halide Salts 基于热稳定钙钛矿纳米晶嵌入金属卤化物盐的双模光学温度计

Advanced Physics Research Pub Date : 2024-09-08 DOI: 10.1002/apxr.202400099

Dandan Yang, Tianzhu Zhao, Zixing Peng, Xiudi Xiao, Guoping Dong

{"title":"Dual-Mode Optical Thermometers Based on the Thermal-Stable Perovskite Nanocrystals Embedded in Robust Metal Halide Salts","authors":"Dandan Yang, Tianzhu Zhao, Zixing Peng, Xiudi Xiao, Guoping Dong","doi":"10.1002/apxr.202400099","DOIUrl":"https://doi.org/10.1002/apxr.202400099","url":null,"abstract":"Photothermal sensing is crucial for the creation of smart integrated devices. All-inorganic metal halide perovskites with the formula CsPbX3 (X═Cl, Br, I) have excellent photo-physical performance, offering exciting opportunities for flexible electronics. Hence, a supersaturated precipitation strategy is proposed for the preparation of salt-shelled metal halide solids. The well-designed CsPbX3@MX (M═K, Cs) products exhibit bright narrow visible emissions and favorable thermal stability up to 195 °C. Co-doping with Ni2+ and Mn2+ ions, the CsPbCl3@KCl products have realized dual-mode thermometry. Utilizing the blue emission from the CsPbCl3 host and the red emission from the Mn2+ ion, a fluorescence intensity ratio technique is obtained to monitor the temperature of good stability and repeatability. Based on the regular fluorescence decay of Mn2+ ions with rising temperature, the lifetime of Mn2+ ions can also be used for temperature sensing. It is believed that such stable metal halides with dual-mode thermometry will provide a new sight for optical thermometers and, more importantly, will unleash the possibility of a broad variety of applications in lightweight and integrated functional devices.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400099","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143380324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Review of Integrated Photonic Devices Using Sb2Se3 Sb2Se3集成光子器件研究进展

Advanced Physics Research Pub Date : 2024-09-07 DOI: 10.1002/apxr.202400080

Xiaojun Chen, Jiao Lin, Ke Wang

{"title":"A Review of Integrated Photonic Devices Using Sb2Se3","authors":"Xiaojun Chen, Jiao Lin, Ke Wang","doi":"10.1002/apxr.202400080","DOIUrl":"https://doi.org/10.1002/apxr.202400080","url":null,"abstract":"The silicon photonic technology is a highly promising option for photonic integrated circuits and has attracted intensive interests, particularly since it can utilize complementary metal-oxide-semiconductor processing techniques and facilities, thereby realizing high-density photonic integrations with low-cost. Unfortunately, the thermo-optic and the carrier dispersion effects, which are the typical means of tuning silicon photonics devices, bring the drawbacks of high power consumption and large device size due to the relatively weak effect with a small refractive index change and being volatile. For overcoming these drawbacks, phase-change materials are introduced into silicon photonic devices, where VO2 and Ge2Sb2Te5 are the most commonly used ones. However, the key disadvantage of large loss resulting from them limits further improving the performances of integrated photonic devices. Therefore, Sb2Se3 has seen increasing interests recently in the design of silicon photonic integrated devices, benefiting from the advantages of having extremely low loss over the C-band and being non-volatile. In this paper, the trending recent studies about integrated optical devices are systematically reviewed using Sb2Se3, which are classified according to the device function.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400080","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143113315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Organic Ferroelectrics for Regulation of Electronic and Ionic Transport Toward Neuromorphic Applications 有机铁电体调控电子和离子输运的神经形态应用

Advanced Physics Research Pub Date : 2024-09-03 DOI: 10.1002/apxr.202400087

Minsub Lee, Beomjin Jeong

{"title":"Organic Ferroelectrics for Regulation of Electronic and Ionic Transport Toward Neuromorphic Applications","authors":"Minsub Lee, Beomjin Jeong","doi":"10.1002/apxr.202400087","DOIUrl":"https://doi.org/10.1002/apxr.202400087","url":null,"abstract":"Organic ferroelectrics (OFEs) have been of significant research interest not only for nonvolatile memory applications but also for their unique material characteristics such as mechanical softness, biocompatibility, facile processibility, and chemically tailorable functionalities that inorganic counterparts are hard to achieve. Despite these promising merits, the utilization of OFEs has mainly focused on simply demonstrating flexible nonvolatile memories wherein modulation of electronic conductance is of interest. Recent studies indicate that the applicability of OFEs can be further extensive, particularly when combined with electronic, ionic, and mixed electronic-ionic conducting media. Herein, we discuss that OFEs can be employed for the regulation of electronic as well as ionic charges, and lead to unique device behaviors. First, we comprehensively introduce organic ferroelectric materials classified with their structures and compositions. Next, we discuss recent studies where organic ferroelectricity has been incorporated with electronic, ionic, or mixed transport system to resolve issues in devices and endow multifunctionality, which are promising for neuromorphic computing and sensory memory systems. Finally, insight into the research direction of OFEs is provided, and what hurdles shall be overcome for real-world applications.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400087","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143111775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Toward thin GaSb Buffer Layers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy 用分子束外延法在轴上（001）硅上生长薄GaSb缓冲层

Advanced Physics Research Pub Date : 2024-08-22 DOI: 10.1002/apxr.202400090

A. Gilbert, M. Ramonda, G. Patriarche, E. Tournié, J.-B. Rodriguez

{"title":"Toward thin GaSb Buffer Layers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy","authors":"A. Gilbert, M. Ramonda, G. Patriarche, E. Tournié, J.-B. Rodriguez","doi":"10.1002/apxr.202400090","DOIUrl":"https://doi.org/10.1002/apxr.202400090","url":null,"abstract":"The monolithic integration of III-Vs on Silicon (Si) is of great interest for the development of active photonic integrated circuits (PICs). The main challenge is to achieve a high-quality epitaxy of the III-V on the Si substrate, as the differences between the materials are responsible for the formation of crystal defects, in particular threading dislocations (TDs) and antiphase domains (APDs) delineated by antiphase boundaries (APBs), which degrade the device's performance. A new technique is demonstrated to achieve thin APBs-free GaSb buffer layers grown on Si substrates. The original idea presented in this paper is to introduce a GaAs layer into the buffer to promote faster burial of APDs. Two strategies are compared; the first one involves the complete APDs burying in GaAs before growing GaSb, while the second one uses a thin GaAs layer before burying the APDs in the GaSb layer. APB-free buffer layers as thin as 215/400 nm have been obtained using the first method, which represents a factor of 2/4 thickness reduction compared to the previous results for both 0.5° and 0.2° miscut angles.","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202400090","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143118062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Review of Multi-Order Diffraction Beams: From Phase Gradient Metasurface to Metagratings 多阶衍射光束综述：从相梯度元面到元光束

Advanced Physics Research Pub Date : 2024-08-22 DOI: 10.1002/apxr.202400076

Yuxiang Wang, Yueyi Yuan, Kuang Zhang

引用次数: 0