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On the mechanisms of Jc increment and degradation in high Jc Ba122 tapes made by the different processing 不同加工工艺制作的高 Jc Ba122 胶带的 Jc 增量和降解机理
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2023-12-25 DOI: 10.35848/1882-0786/ad1891
F. Kametani, Yi-Feng Su, C. Tarantini, Eric E Hellstrom, A. Matsumoto, H. Kumakura, K. Togano, He Huang, Yanwei Ma
{"title":"On the mechanisms of Jc increment and degradation in high Jc Ba122 tapes made by the different processing","authors":"F. Kametani, Yi-Feng Su, C. Tarantini, Eric E Hellstrom, A. Matsumoto, H. Kumakura, K. Togano, He Huang, Yanwei Ma","doi":"10.35848/1882-0786/ad1891","DOIUrl":"https://doi.org/10.35848/1882-0786/ad1891","url":null,"abstract":"We compared the grain and grain boundary (GB) nanostructures in two Ba122 tapes with similarly high Jc. The Ag-sheathed tape made by hot pressing has the larger, more plate-like grains with better c-axis alignment but has more GBs blocked by FeAs and Ba-O. In contrast, the tape made by cold pressing with Ag-Sn/Stainless steel sheath possesses less plate-like grains and weak grain alignment but has more continuous current paths with clean physically well-connected GBs. Our nanostructural comparison emphasizes the strong need to achieve both good grain alignment and clean GB for further Jc improvement of Ba122 tapes.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"37 7","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139158721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process 通过低成本镁扩散工艺实现极性氮化镓骆驼二极管
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2023-12-19 DOI: 10.35848/1882-0786/ad0db9
Biplab Sarkar, Jia Wang, Oves Badami, Tanmoy Pramanik, Woong Kwon, Hirotaka Watanabe and Hiroshi Amano
{"title":"Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process","authors":"Biplab Sarkar, Jia Wang, Oves Badami, Tanmoy Pramanik, Woong Kwon, Hirotaka Watanabe and Hiroshi Amano","doi":"10.35848/1882-0786/ad0db9","DOIUrl":"https://doi.org/10.35848/1882-0786/ad0db9","url":null,"abstract":"In this letter, we show that low-cost physical vapor deposition of Mg followed by a thermal diffusion annealing process increases the effective barrier height at the metal/Ga-polar GaN Schottky interface. Thus, for the first time, GaN Camel diodes with improved barrier height and turn-on voltage were realized compared to regular GaN Schottky barrier diodes. Temperature-dependent current–voltage characteristics indicated a near-homogeneous and near-ideal behavior of the GaN Camel diode. The analysis performed in this work is thought to be promising for improving the performance of future GaN-based unipolar diodes.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"25 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138741759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications 用于氮化镓 HEMT 应用的脉冲溅射选择性外延形成高变性 n 型氮化镓欧姆触点
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2023-12-18 DOI: 10.35848/1882-0786/ad16ae
Ryota Maeda, K. Ueno, Hiroshi Fujioka
{"title":"Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications","authors":"Ryota Maeda, K. Ueno, Hiroshi Fujioka","doi":"10.35848/1882-0786/ad16ae","DOIUrl":"https://doi.org/10.35848/1882-0786/ad16ae","url":null,"abstract":"\u0000 This study describes the selective formation process of highly degenerate n-type GaN (d-GaN) ohmic contacts for the source and drain regions of GaNHEMTs using pulsed sputtering deposition (PSD). The selective formation process using SiO2 masks and PSD epitaxial growth enabled the uniform formation of d-GaN in micron-meter size. Transmission-line-method measurements demonstrated that the contact resistance of GaN HEMTs with d-GaN regrowth contacts was remarkably low at 0.28 Ωmm, leading to reasonable DC output characteristics. These findings suggest that PSD epitaxial regrowth of d-GaN is a promising approach for the high-throughput formation of low-resistivity ohmic contacts on large-area GaN HEMT wafers.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"127 2","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138965128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography 利用离轴电子全息技术识别氮化镓中聚焦离子束诱导的缺陷并进行热修复
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2023-12-15 DOI: 10.35848/1882-0786/ad163d
Keyan Ji, M. Schnedler, Q. Lan, Fengshan Zheng, Yuhan Wang, Yan Lu, Holger Eisele, J. Carlin, R. Butté, N. Grandjean, R. Dunin-Borkowski, Philipp Ebert
{"title":"Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography","authors":"Keyan Ji, M. Schnedler, Q. Lan, Fengshan Zheng, Yuhan Wang, Yan Lu, Holger Eisele, J. Carlin, R. Butté, N. Grandjean, R. Dunin-Borkowski, Philipp Ebert","doi":"10.35848/1882-0786/ad163d","DOIUrl":"https://doi.org/10.35848/1882-0786/ad163d","url":null,"abstract":"\u0000 Thermal healing of focused ion beam-implanted defects in GaN is investigated by off-axis electron holography in TEM. The data reveal that healing, starts at temperatures as low as 250-300 °C. The healing processes result in an irreversible transition from defect-induced Fermi level pinning near the valence band toward a midgap pinning induced by the crystalline-amorphous transition interface. Based on the measured pinning levels and the defect charge states, we identify the dominant defect type to be substitutional carbon on nitrogen sites.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"44 15","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138995838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD 通过 MOCVD 在块状氮化铝基底上制造高压氮化铝肖特基势垒二极管
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2023-12-14 DOI: 10.35848/1882-0786/ad15f4
Dinusha Herath Mudiyanselage, Dawei Wang, Bingcheng Da, Ziyi He, H. Fu
{"title":"High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD","authors":"Dinusha Herath Mudiyanselage, Dawei Wang, Bingcheng Da, Ziyi He, H. Fu","doi":"10.35848/1882-0786/ad15f4","DOIUrl":"https://doi.org/10.35848/1882-0786/ad15f4","url":null,"abstract":"\u0000 This letter reports the demonstration of AlN Schottky barrier diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics with ON/OFF ratios of 106–108 and excellent thermal stability from 298 to 623 K. The device Schottky barrier height increased from 0.89 to 1.85 eV, and the ideality factor decreased from 4.29 to 1.95 with increasing temperature, ascribed to the inhomogeneous metal/AlN interface. This work demonstrates the potential of AlN as an ultra-wide bandgap semiconductor for developing multi-kV AlN high-voltage and high-power devices.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"12 4","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139002508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phononic band calculations and experimental imaging of topological boundary modes in a hexagonal flexural wave machine 六边形挠性波机上拓扑边界模式的声带计算和实验成像
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2023-12-13 DOI: 10.35848/1882-0786/ad157f
Hayato Takeda, Ryoya Minami, Osamu Matsuda, Oliver Wright, M. Tomoda
{"title":"Phononic band calculations and experimental imaging of topological boundary modes in a hexagonal flexural wave machine","authors":"Hayato Takeda, Ryoya Minami, Osamu Matsuda, Oliver Wright, M. Tomoda","doi":"10.35848/1882-0786/ad157f","DOIUrl":"https://doi.org/10.35848/1882-0786/ad157f","url":null,"abstract":"\u0000 We construct a two-dimensional mechanical wave machine based on a hexagonal lattice to investigate low-frequency flexural plate waves whose propagation mimicks a topological quantum valley Hall system. We thereby demonstrate ‘mechanical graphene’ by extension of the one-dimensional Shive wave machine. Imaging experiments, backed up by simulations, reveal the presence of boundary modes along a topological interface, despite the absence of Dirac cones in the dispersion relation under conditions of spatial inversion symmetry. This work provides an alternative route for the investigation of topological phononic crystals, and should lead to new insights in the design and observation of artificial phononic structures.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"35 7","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139005615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultralow thermal conductivity of amorphous silicon-germanium thin films for alloy and disorder scattering determined by 3ω method and nanoindentation 用 3ω 法和纳米压痕法测定合金和无序散射非晶硅锗薄膜的超低热导率
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2023-12-12 DOI: 10.35848/1882-0786/ad14f1
Daiki Tanisawa, Yoshiyuki Shinozaki, Tetsuya Takizawa, Asato Yamaguchi, Hiroshi Murotani, M. Takashiri
{"title":"Ultralow thermal conductivity of amorphous silicon-germanium thin films for alloy and disorder scattering determined by 3ω method and nanoindentation","authors":"Daiki Tanisawa, Yoshiyuki Shinozaki, Tetsuya Takizawa, Asato Yamaguchi, Hiroshi Murotani, M. Takashiri","doi":"10.35848/1882-0786/ad14f1","DOIUrl":"https://doi.org/10.35848/1882-0786/ad14f1","url":null,"abstract":"\u0000 The ultralow thermal conductivity (1.3 W/(m∙K)) of amorphous silicon-germanium films for alloy and disorder scattering was investigated using the 3ω method and nanoindentation. The films exhibited the lowest phonon mean free path (MFP) of 0.5 nm compared to that of amorphous silicon (1.1 nm) and germanium (0.9 nm) films, owing to alloy scattering in the silicon-germanium films. Based on Matthiessen's rule, the phonon MFPs of the amorphous silicon-germanium films contributing to alloy and disorder scattering were calculated to be 1.0 nm for both. Therefore, alloy and disorder scattering contribute equally to the reduction in the phonon MFP.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"11 8","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139007556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modulation of spin Hall magnetoresistance in α-Fe2O3/Pt by uniaxial tensile strain 单轴拉伸应变对 α-Fe2O3/Pt 中自旋霍尔磁阻的调制
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2023-12-11 DOI: 10.35848/1882-0786/ad0db7
Junnosuke Matsuki, Tomoyuki Yokouchi and Yuki Shiomi
{"title":"Modulation of spin Hall magnetoresistance in α-Fe2O3/Pt by uniaxial tensile strain","authors":"Junnosuke Matsuki, Tomoyuki Yokouchi and Yuki Shiomi","doi":"10.35848/1882-0786/ad0db7","DOIUrl":"https://doi.org/10.35848/1882-0786/ad0db7","url":null,"abstract":"We demonstrate the modulation of spin Hall magnetoresistance (SMR) by uniaxial tensile strain at RT in heterostructures of antiferromagnetic insulating (0001)-oriented α-Fe2O3 (hematite) and Pt. The SMR signals consistent with previous reports are observed in α-Fe2O3/Pt without strain. Under tensile strains, we found that the magnetoresistance amplitude changes almost linearly with the strain amplitude. The observed magnetoresistance change is attributed to the strain modulation of SMR owing to the change in domain distribution via magnetoelastic couplings. The results provide a useful method for controlling the spin-dependent transport effect in antiferromagnetic-insulator/metal bilayers.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"14 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138575217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hetero-assembly design of 2D oxide nanosheets for tailored thermal shielding materials 用于定制热屏蔽材料的二维氧化物纳米片的异构组装设计
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2023-12-08 DOI: 10.35848/1882-0786/ad13ce
Hirofumi Tsunematsu, Keita Nishibashi, Eisuke Yamamoto, Makoto Kobayashi, Tomohiro Yoshida, Minoru Osada
{"title":"Hetero-assembly design of 2D oxide nanosheets for tailored thermal shielding materials","authors":"Hirofumi Tsunematsu, Keita Nishibashi, Eisuke Yamamoto, Makoto Kobayashi, Tomohiro Yoshida, Minoru Osada","doi":"10.35848/1882-0786/ad13ce","DOIUrl":"https://doi.org/10.35848/1882-0786/ad13ce","url":null,"abstract":"\u0000 We present a new approach for designing thermal shielding materials using two-dimensional (2D) oxide nanosheets. Our approach is hetero-assembly design [(Ti0.87O2)m(Cs2.7W11O35−d)20 (m = 0, 5, 10) ] by overlaying high refractive index (n) Ti0.87O2 nanosheets with transparent conducting Cs2.7W11O35−d nanosheets. By a proper design of the thickness of high-n Ti0.87O2 layers, we achieved the optimum thermal shielding properties with a high NIR reflectance (> 46%), a high visible transparency (> 76%) and a neutral color in an ultrathin form (< 60 nm). Our nanosheet approach is of technological importance for exploring new thermal shielding materials.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"51 4","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138587255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature-dependent Raman-active phonon modes and Electron−Phonon Coupling in β-Ga2O3 microwire β-Ga2O3微线中随温度变化的拉曼主动声子模式和电子-声子耦合
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2023-12-07 DOI: 10.35848/1882-0786/ad135c
Rongcheng Yao, Lingyu Wan, Bingsheng Li, Yuefei Wang
{"title":"Temperature-dependent Raman-active phonon modes and Electron−Phonon Coupling in β-Ga2O3 microwire","authors":"Rongcheng Yao, Lingyu Wan, Bingsheng Li, Yuefei Wang","doi":"10.35848/1882-0786/ad135c","DOIUrl":"https://doi.org/10.35848/1882-0786/ad135c","url":null,"abstract":"\u0000 The lattice vibration and electron-phonon coupling (EPC) in β-Ga2O3 microwire are systematically investigated. The β-Ga2O3 microwire that is (020)-oriented shows 14 Raman peaks, with all the full width at half maximum (FWHM) of them narrower than those of (100)-oriented β-Ga2O3 bulk single crystal. As the temperature increases from 80K to 300K, most Raman-active phonon modes are blueshifted, while a few modes are first blueshifted and then redshifted. The photoluminescence mainly originates from the recombination of self-trapping exciton (STE) and the quantitative analysis reveals that there exists quite strong EPC in β-Ga2O3 microwire and the Huang-Rhys factor is up to Sʹ≈14.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"47 24","pages":""},"PeriodicalIF":2.3,"publicationDate":"2023-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138593963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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