用 3ω 法和纳米压痕法测定合金和无序散射非晶硅锗薄膜的超低热导率

IF 2.3 4区 物理与天体物理 Q3 PHYSICS, APPLIED
Daiki Tanisawa, Yoshiyuki Shinozaki, Tetsuya Takizawa, Asato Yamaguchi, Hiroshi Murotani, M. Takashiri
{"title":"用 3ω 法和纳米压痕法测定合金和无序散射非晶硅锗薄膜的超低热导率","authors":"Daiki Tanisawa, Yoshiyuki Shinozaki, Tetsuya Takizawa, Asato Yamaguchi, Hiroshi Murotani, M. Takashiri","doi":"10.35848/1882-0786/ad14f1","DOIUrl":null,"url":null,"abstract":"\n The ultralow thermal conductivity (1.3 W/(m∙K)) of amorphous silicon-germanium films for alloy and disorder scattering was investigated using the 3ω method and nanoindentation. The films exhibited the lowest phonon mean free path (MFP) of 0.5 nm compared to that of amorphous silicon (1.1 nm) and germanium (0.9 nm) films, owing to alloy scattering in the silicon-germanium films. Based on Matthiessen's rule, the phonon MFPs of the amorphous silicon-germanium films contributing to alloy and disorder scattering were calculated to be 1.0 nm for both. Therefore, alloy and disorder scattering contribute equally to the reduction in the phonon MFP.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"11 8","pages":""},"PeriodicalIF":2.3000,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultralow thermal conductivity of amorphous silicon-germanium thin films for alloy and disorder scattering determined by 3ω method and nanoindentation\",\"authors\":\"Daiki Tanisawa, Yoshiyuki Shinozaki, Tetsuya Takizawa, Asato Yamaguchi, Hiroshi Murotani, M. Takashiri\",\"doi\":\"10.35848/1882-0786/ad14f1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n The ultralow thermal conductivity (1.3 W/(m∙K)) of amorphous silicon-germanium films for alloy and disorder scattering was investigated using the 3ω method and nanoindentation. The films exhibited the lowest phonon mean free path (MFP) of 0.5 nm compared to that of amorphous silicon (1.1 nm) and germanium (0.9 nm) films, owing to alloy scattering in the silicon-germanium films. Based on Matthiessen's rule, the phonon MFPs of the amorphous silicon-germanium films contributing to alloy and disorder scattering were calculated to be 1.0 nm for both. Therefore, alloy and disorder scattering contribute equally to the reduction in the phonon MFP.\",\"PeriodicalId\":8093,\"journal\":{\"name\":\"Applied Physics Express\",\"volume\":\"11 8\",\"pages\":\"\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2023-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Express\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1882-0786/ad14f1\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Express","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1882-0786/ad14f1","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

摘要

利用 3ω 法和纳米压痕法研究了非晶硅-锗薄膜的超低热导率(1.3 W/(m∙K))合金散射和无序散射。与非晶硅薄膜(1.1 nm)和锗薄膜(0.9 nm)相比,硅锗薄膜的声子平均自由路径(MFP)最低,仅为 0.5 nm,这是由于硅锗薄膜中存在合金散射。根据 Matthiessen 定则,计算得出非晶硅锗薄膜中合金和无序散射产生的声子 MFP 均为 1.0 nm。因此,合金散射和无序散射对减少声子 MFP 的贡献相同。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultralow thermal conductivity of amorphous silicon-germanium thin films for alloy and disorder scattering determined by 3ω method and nanoindentation
The ultralow thermal conductivity (1.3 W/(m∙K)) of amorphous silicon-germanium films for alloy and disorder scattering was investigated using the 3ω method and nanoindentation. The films exhibited the lowest phonon mean free path (MFP) of 0.5 nm compared to that of amorphous silicon (1.1 nm) and germanium (0.9 nm) films, owing to alloy scattering in the silicon-germanium films. Based on Matthiessen's rule, the phonon MFPs of the amorphous silicon-germanium films contributing to alloy and disorder scattering were calculated to be 1.0 nm for both. Therefore, alloy and disorder scattering contribute equally to the reduction in the phonon MFP.
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来源期刊
Applied Physics Express
Applied Physics Express 物理-物理:应用
CiteScore
4.80
自引率
8.70%
发文量
310
审稿时长
1.2 months
期刊介绍: Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
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