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Temperature- and magnetic field-induced magnetic structural changes in the Fe3Si/FeSi2 superlattice 温度和磁场诱导的 Fe3Si/FeSi2 超晶格磁结构变化
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-03-22 DOI: 10.35848/1882-0786/ad325f
Takayasu Hanashima, Jun-ichi Suzuki, Kazuhisa Kakurai, Noboru Miyata, Ken-ichiro Sakai, Hiroyuki Deguchi, Yoshiaki Hara, Satoshi Takeichi and Tsuyoshi Yoshitake
{"title":"Temperature- and magnetic field-induced magnetic structural changes in the Fe3Si/FeSi2 superlattice","authors":"Takayasu Hanashima, Jun-ichi Suzuki, Kazuhisa Kakurai, Noboru Miyata, Ken-ichiro Sakai, Hiroyuki Deguchi, Yoshiaki Hara, Satoshi Takeichi and Tsuyoshi Yoshitake","doi":"10.35848/1882-0786/ad325f","DOIUrl":"https://doi.org/10.35848/1882-0786/ad325f","url":null,"abstract":"Artificial lattices with semiconductor spacers are expected to exhibit changes in their magnetic structure owing to the control of their electronic states. The temperature (T) and magnetic-field (Hext) dependence of the in-plane magnetic structure of an [Fe3Si/FeSi2]20 superlattice with a nonmagnetic and semiconducting FeSi2 spacer layer is investigated using magnetization and polarized neutron reflectivity measurements. When Hext = 5 mT, nearly collinear antiferromagnetic (AF) structures are observed from 4 to 298 K. When Hext = 1 T, field-induced fan-like, noncollinear AF structures showing ferromagnetic components along Hext and transverse AF components are observed at low T.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"47 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140196660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural modulation of bilayer graphene under an external electric field and carrier doping 外电场和载流子掺杂下双层石墨烯的结构调制
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-03-15 DOI: 10.35848/1882-0786/ad2ecc
Nadia Sultana, Yanlin Gao, Mina Maruyama and Susumu Okada
{"title":"Structural modulation of bilayer graphene under an external electric field and carrier doping","authors":"Nadia Sultana, Yanlin Gao, Mina Maruyama and Susumu Okada","doi":"10.35848/1882-0786/ad2ecc","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2ecc","url":null,"abstract":"Density functional theory was used to investigate the geometric structure of bilayer graphene under an external electric field with carrier doping. Our calculations revealed the crucial impact of external electric fields and the hole injection on determining the geometric structure of bilayer graphene. The bond length of graphene monotonically increased when increasing the hole doping concentration, while it remained insensitive to electron doping. Additionally, there accumulated carriers predominantly distributed in the outermost layer located just below the gate electrode. These results enabled the construction of moiré superlattices in the bilayer graphene, possessing different moiré periodicity depending on the carrier concentration.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"5082 5 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140151716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Field-free magnetization switching with full scale in Pt/Tm3Fe5O12 bilayer on vicinal substrate 在沧桑基底上的 Pt/Tm3Fe5O12 双层中实现全量程无磁场磁化切换
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-03-15 DOI: 10.35848/1882-0786/ad2d74
Tianhui Li, Weikai Luo, Jinxiang Wu, Xinjun Li, Hui Yang, Xiaotian Zhao and Hongyu An
{"title":"Field-free magnetization switching with full scale in Pt/Tm3Fe5O12 bilayer on vicinal substrate","authors":"Tianhui Li, Weikai Luo, Jinxiang Wu, Xinjun Li, Hui Yang, Xiaotian Zhao and Hongyu An","doi":"10.35848/1882-0786/ad2d74","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2d74","url":null,"abstract":"The spin–orbit torques within a Pt/Tm3Fe5O12 (TmIG) bilayer offer an expedient method for manipulating the magnetization of TmIG. However, the practical application of TmIG is hindered by the presence of an external field during switching. Here, we demonstrate field-free magnetization switching in Pt/TmIG bilayer on a vicinal substrate with minimal sacrifice to the perpendicular magnetic anisotropy (PMA) of TmIG. With the assistance of tilt PMA, reversible perpendicular magnetization switching is realized in the absence of an external field. Our results offer an alternative solution for achieving field-free perpendicular magnetization switching in a Pt/TmIG bilayer, thereby fostering the advancement of emerging SOT-based devices.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"69 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140151580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of polar alignment structure and surface anchoring energy in ferroelectric nematic liquid crystals by renormalized transmission spectroscopic ellipsometry 利用重正化透射光谱椭偏仪评估铁电向列液晶中的极性排列结构和表面锚定能
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-03-14 DOI: 10.35848/1882-0786/ad2cff
Sakunosuke Abe, Amon Nakagawa, Yosei Shibata, Munehiro Kimura and Tadashi Akahane
{"title":"Evaluation of polar alignment structure and surface anchoring energy in ferroelectric nematic liquid crystals by renormalized transmission spectroscopic ellipsometry","authors":"Sakunosuke Abe, Amon Nakagawa, Yosei Shibata, Munehiro Kimura and Tadashi Akahane","doi":"10.35848/1882-0786/ad2cff","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2cff","url":null,"abstract":"It is essential to estimate the surface polar anchoring energy in order to discuss the interfacial orientation of ferroelectric nematic liquid crystals. In this study, we accurately estimated the twist angle of a -twist cell with an antiparallel rubbing manner, by means of renormalized transmission spectroscopic ellipsometry, which has a great deal of experience in measuring the twist angle of ordinary nematic liquid crystals. We also succeeded in estimating the reduced polar anchoring energy from the essential equation derived from the simplified torque balance equation. It is assumed that the reduced surface polar anchoring energy is on the order of 102.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"7 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140151695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A simple reflective metalens based on reverse design for an ultra-high-efficiency free space wavelength splitter 基于反向设计的简单反射金属膜，用于超高效率自由空间波长分配器
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-03-12 DOI: 10.35848/1882-0786/ad2c00
Chao Wang, Yunpeng Hao, Boqi Wu, Fan Yang, Chunlei Zhao, Yaodan Chi and Xiaotian Yang
{"title":"A simple reflective metalens based on reverse design for an ultra-high-efficiency free space wavelength splitter","authors":"Chao Wang, Yunpeng Hao, Boqi Wu, Fan Yang, Chunlei Zhao, Yaodan Chi and Xiaotian Yang","doi":"10.35848/1882-0786/ad2c00","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2c00","url":null,"abstract":"We propose two kinds of high-efficiency free-space wave splitters in the mid-IR band using reverse design. The wavelength divider based on the abnormal reflection principle realizes a beam-splitting angle of 22.00° and 10.92° by controlling the phase distribution, and the reflection efficiency of both wavelengths exceeds 50%. The wavelength divider designed based on the concept of metalens simultaneously accomplishes the functions of focusing and beam splitting. It has a focal length of 100 μm and a relative focal position of 100 μm. Most importantly, the focusing efficiency for the two wavelengths reaches an impressive 48.59% and 72.51%, respectively.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"18 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140106398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multibeam X-ray tomography optical system for narrow-energy-bandwidth synchrotron radiation 用于窄能带同步辐射的多波束 X 射线断层摄影光学系统
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-03-11 DOI: 10.35848/1882-0786/ad2aff
Wolfgang Voegeli, Haruki Takayama, Xiaoyu Liang, Tetsuroh Shirasawa, Etsuo Arakawa, Hiroyuki Kudo and Wataru Yashiro
{"title":"Multibeam X-ray tomography optical system for narrow-energy-bandwidth synchrotron radiation","authors":"Wolfgang Voegeli, Haruki Takayama, Xiaoyu Liang, Tetsuroh Shirasawa, Etsuo Arakawa, Hiroyuki Kudo and Wataru Yashiro","doi":"10.35848/1882-0786/ad2aff","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2aff","url":null,"abstract":"The design and evaluation experiments of a multibeam X-ray tomography optical system that can be used with synchrotron radiation from sources with a narrow energy bandwidth, i.e. undulator sources, are reported. It consists of silicon single crystals that diffract the incident X-rays to 27 beams, which are used to image a sample. The energy of the beams was aligned with an accuracy sufficient for use at typical undulator beamlines. Projection images of a test sample were collected and successfully reconstructed, showing the feasibility of a high-speed X-ray tomography instrument based on the optical system.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"7 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140099405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
8.7 A/700 V β-Ga2O3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination 通过氧退火结合自对准介子端接演示 8.7 A/700 V β-Ga2O3 肖特基势垒二极管
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-03-11 DOI: 10.35848/1882-0786/ad2d73
Feihong Wu, Zhao Han, Jinyang Liu, Yuangang Wang, Weibing Hao, Xuanze Zhou, Guangwei Xu, Yuanjie Lv, Zhihong Feng and Shibing Long
{"title":"8.7 A/700 V β-Ga2O3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination","authors":"Feihong Wu, Zhao Han, Jinyang Liu, Yuangang Wang, Weibing Hao, Xuanze Zhou, Guangwei Xu, Yuanjie Lv, Zhihong Feng and Shibing Long","doi":"10.35848/1882-0786/ad2d73","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2d73","url":null,"abstract":"β-Ga2O3 Schottky barrier diodes (SBDs) with low-defect epitaxial surface and effective termination are essential for realizing excellent blocking characteristics. This work systematically studied oxygen annealing at various temperatures, optimizing the epitaxial surface by reducing the surface roughness and dislocation density. Combined with mesa termination, the results showed that the breakdown voltage (Vbr) significantly increased from 845 V to 1532 V. The device with a 3 × 3 mm2 anode size was fabricated simultaneously, and the high forward currents of 8.7 A@2 V and Vbr > 700 V were achieved. This work shows a possible solution for the commercialization of β-Ga2O3 SBDs.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"35 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140099641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions Sb2Te3/Si 异质结、低势垒 Sb2Te3/n-Si 和高势垒 Sb2Te3/p-Si 结的电学特性和能带排列
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-03-08 DOI: 10.35848/1882-0786/ad2d75
Naoya Okada, Wen Hsin Chang, Shogo Hatayama, Yuta Saito and Toshifumi Irisawa
{"title":"Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions","authors":"Naoya Okada, Wen Hsin Chang, Shogo Hatayama, Yuta Saito and Toshifumi Irisawa","doi":"10.35848/1882-0786/ad2d75","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2d75","url":null,"abstract":"We investigated the electrical junction properties of the layered Sb2Te3 film formed on Si substrates. The current−voltage characteristics of the Sb2Te3/n-Si heterojunction showed an ohmic properties, whereas the Sb2Te3/p-Si heterojunction exhibited rectifying properties with a high barrier height of 0.77 eV. The capacitance−voltage characteristics of MOS capacitors with the Sb2Te3 electrode indicated an effective work function of 4.44 eV for the Sb2Te3 film. These findings suggest that the Sb2Te3/Si heterostructure possesses a low conduction band offset, as inferred from the temperature dependence of the current−voltage characteristics of the Sb2Te3/n-Si.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"32 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140073315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extraction of interfacial thermal resistance across an organic/semiconductor interface using optical-interference contactless thermometry 利用光干涉非接触测温法提取有机物/半导体界面的界面热阻
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-03-06 DOI: 10.35848/1882-0786/ad2b01
Jiawen Yu, Hiroaki Hanafusa and Seiichiro Higashi
{"title":"Extraction of interfacial thermal resistance across an organic/semiconductor interface using optical-interference contactless thermometry","authors":"Jiawen Yu, Hiroaki Hanafusa and Seiichiro Higashi","doi":"10.35848/1882-0786/ad2b01","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2b01","url":null,"abstract":"We have developed an experimental method to extract interfacial thermal resistance (ITR) at an organic/semiconductor interface based on optical-interference contactless thermometry. The proposed technique was applied to a SU-8/SiC bilayer sample, and clear oscillations in reflectivity induced by optical interference during pulse heating and cooling were observed. After fitting the observed reflectivity waveform with simulation results by a two-dimensional (2D) double-layer heat conduction model and multi-reflection calculations, ITR was extracted as 190 mm2 K W−1, which resulted in a temperature drop of 11 K at the interface. Moreover, the 2D transient temperature distribution of the sample throughout pulse heating and cooling was obtained.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"13 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanosecond recombination lifetimes and spin relaxation times in (110) InGaAs/AlGaAs quantum wells at room temperature 室温下 (110) InGaAs/AlGaAs 量子阱中的纳秒级重组寿命和自旋弛豫时间
IF 2.3 4区 物理与天体物理
Applied Physics Express Pub Date : 2024-03-06 DOI: 10.35848/1882-0786/ad2907
Satoshi Iba and Yuzo Ohno
{"title":"Nanosecond recombination lifetimes and spin relaxation times in (110) InGaAs/AlGaAs quantum wells at room temperature","authors":"Satoshi Iba and Yuzo Ohno","doi":"10.35848/1882-0786/ad2907","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2907","url":null,"abstract":"Quantum wells in InGaAs/AlGaAs with (110) orientation are attractive as active layers in spin-controlled lasers with circularly polarized emission, while the spin relaxation time is expected to be larger than for (100)-oriented layers. However, the hitherto reported recombination lifetimes (40 ps) and spin relaxation times (440 ps) of (110) InGaAs/AlGaAs structures are insufficient. Here it is shown that higher growth temperatures and higher V/III beam equivalent pressure ratios than previously used in crystal growth by molecular beam epitaxy lead to recombination and spin relaxation times in the nanosecond range at RT, meeting the requirements for application in spin lasers.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"99 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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