Sb2Te3/Si 异质结、低势垒 Sb2Te3/n-Si 和高势垒 Sb2Te3/p-Si 结的电学特性和能带排列

IF 2.3 4区物理与天体物理 Q3 PHYSICS, APPLIED

Applied Physics Express Pub Date : 2024-03-08 DOI:10.35848/1882-0786/ad2d75

Naoya Okada, Wen Hsin Chang, Shogo Hatayama, Yuta Saito and Toshifumi Irisawa

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引用次数: 0

摘要

我们研究了在硅衬底上形成的层状 Sb2Te3 薄膜的电结特性。Sb2Te3/n-Si 异质结的电流-电压特性显示出欧姆特性，而 Sb2Te3/p-Si 异质结则显示出整流特性，具有 0.77 eV 的高势垒高度。带有 Sb2Te3 电极的 MOS 电容器的电容-电压特性表明，Sb2Te3 薄膜的有效功函数为 4.44 eV。从 Sb2Te3/n-Si 电流-电压特性的温度依赖性推断，这些发现表明 Sb2Te3/Si 异质结构具有较低的导带偏移。

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Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions

We investigated the electrical junction properties of the layered Sb2Te3 film formed on Si substrates. The current−voltage characteristics of the Sb2Te3/n-Si heterojunction showed an ohmic properties, whereas the Sb2Te3/p-Si heterojunction exhibited rectifying properties with a high barrier height of 0.77 eV. The capacitance−voltage characteristics of MOS capacitors with the Sb2Te3 electrode indicated an effective work function of 4.44 eV for the Sb2Te3 film. These findings suggest that the Sb2Te3/Si heterostructure possesses a low conduction band offset, as inferred from the temperature dependence of the current−voltage characteristics of the Sb2Te3/n-Si.

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来源期刊

Applied Physics Express 物理-物理：应用

CiteScore

4.80

自引率

8.70%

发文量

310

审稿时长

1.2 months

期刊介绍： Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).