Proceedings of the National Academy of Sciences, India Section A: Physical Sciences最新文献_第7页

Multi-level Threshold Switching and Crystallization Characteristics of Nitrogen Alloyed GaSb for Phase Change Memory Application 相变存储用氮合金GaSb的多级阈值开关及结晶特性

IF 0.9 4区综合性期刊

Proceedings of the National Academy of Sciences, India Section A: Physical Sciences Pub Date : 2023-06-20 DOI: 10.1007/s40010-023-00832-0

Joshua Asirvatham, Lukasz Walczak, Aloke Kanjilal

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Magnetization Dynamics of Domain Walls in Cylindrical Nanowires 圆柱形纳米线畴壁的磁化动力学

IF 0.9 4区综合性期刊

Proceedings of the National Academy of Sciences, India Section A: Physical Sciences Pub Date : 2023-06-19 DOI: 10.1007/s40010-023-00831-1

M. S. Devapriya, Kartick Biswas, Chandrasekhar Murapaka, Arabinda Haldar

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A Novel Approach in the Light of Fuzzy Multiset Topology 基于模糊多集拓扑的一种新方法

IF 0.9 4区综合性期刊

Proceedings of the National Academy of Sciences, India Section A: Physical Sciences Pub Date : 2023-06-16 DOI: 10.1007/s40010-023-00834-y

Md Mirazul Hoque, Baby Bhattacharya, Binod Chandra Tripathy

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An Account of Natural Material-Based Nonvolatile Memory Device 基于天然材料的非易失性存储器件的叙述

IF 0.9 4区综合性期刊

Proceedings of the National Academy of Sciences, India Section A: Physical Sciences Pub Date : 2023-06-15 DOI: 10.1007/s40010-023-00830-2

Farhana Yasmin Rahman, Debajyoti Bhattacharjee, Syed Arshad Hussain

{"title":"An Account of Natural Material-Based Nonvolatile Memory Device","authors":"Farhana Yasmin Rahman, Debajyoti Bhattacharjee, Syed Arshad Hussain","doi":"10.1007/s40010-023-00830-2","DOIUrl":"10.1007/s40010-023-00830-2","url":null,"abstract":"<div><p>The development in electronic sector has brought a remarkable change in the lifestyle of mankind. At the same time, this technological advancement results in adverse effect on environment due to the use of toxic and non-degradable materials in various electronic devices. With the emergence of environmental problems, the green, reprogrammable, biodegradable, sustainable and environmental-friendly electronic devices have become one of the best solutions for protecting our environment from hazardous materials without compromising the growth of the electronic industry. Natural material has emerged as the promising candidate for the next generation of electronic devices due to its easy processing, transparency, flexibility, abundant resources, sustainability, recyclability, and simple extraction. This review targets the characteristics, advancements, role, limitations, and prospects of using natural materials as the functional layer of a resistive switching memory device with a primary focus on the switching/memory properties. Among the available memory devices, resistive random access memory, write once read many unipolar memory, etc., devices have a huge potential to become the nonvolatile memory of the next generation owing to their simple structure, high scalability, and low power consumption. The motivation behind this work is to promote the use of natural materials in electronic devices and attract researchers toward a green solution of hazardous problems associated with the electronic devices.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":"93 3","pages":"497 - 510"},"PeriodicalIF":0.9,"publicationDate":"2023-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4616661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Free Convection in a Porous Enclosure by Virtue of Sinusoidal Heating and Cooling on Lateral Side: A Variable Periodicity Perspective 利用侧面正弦加热和冷却的多孔外壳中的自由对流:一个可变周期的观点

IF 0.9 4区综合性期刊

Proceedings of the National Academy of Sciences, India Section A: Physical Sciences Pub Date : 2023-06-15 DOI: 10.1007/s40010-023-00833-z

Saurabh Kapoor, Kumari Manju

{"title":"Free Convection in a Porous Enclosure by Virtue of Sinusoidal Heating and Cooling on Lateral Side: A Variable Periodicity Perspective","authors":"Saurabh Kapoor, Kumari Manju","doi":"10.1007/s40010-023-00833-z","DOIUrl":"10.1007/s40010-023-00833-z","url":null,"abstract":"<div><p>A numerical study has been made on free convection in the anisotropic porous enclosure. By nonuniform sinusoidal heating, flow is induced on the right side wall along with three adiabatic walls. The principal directions of the gravity vector have been taken obliquely to the permeability tensor. The performed study is conducted by using the Brinkman-extended non-Darcy model. The vorticity–streamfunction approach of the spectral element method is applied to solve the governing equations. The significance is specified on the impact of the periodicity parameter (<i>N</i>), local heat transfer rate (Nu<span>(_{y})</span>) along with the flow mechanism in the enclosure with reference to orientation angle (<span>(phi)</span>), permeability ratio (<i>K</i><span>(^{*})</span>) and anisotropic parameters. The outcome for odd <i>N</i> shows that a particular heat transfer at <span>(y=1.5)</span> is pointed extreme. Additionally, the increase in the permeability media while switching <i>K</i><span>(^{*})</span> from 1 to 0.2 increases the heat transfer rate. This increment occurs at the right corner, below the enclosure’s right. Moreover, considering every <i>N</i>, the profiles of Nu<span>(_{y})</span> in both media (isotropic and anisotropic) are similar. However, it varies slightly for <i>N</i><span>(=2)</span>. Remarkably, this analysis shows that the flow pattern has been affected by distinct <i>N</i> via boundary conditions of temperatures. Consequently, the local heat transfer phenomena have also been affected.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":"93 4","pages":"685 - 694"},"PeriodicalIF":0.9,"publicationDate":"2023-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87252085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Two-Phase Ratio Estimation Using Ordinal and Ratio Auxiliary Variables in Non-response 无响应情况下使用序和比辅助变量的两相比估计

IF 0.9 4区综合性期刊

Proceedings of the National Academy of Sciences, India Section A: Physical Sciences Pub Date : 2023-06-09 DOI: 10.1007/s40010-023-00824-0

R. R. Sinha, Bharti Khanna

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Emerging Memory Technologies for Data Storage and Brain-Inspired Computation: A Global View with Indian Research Insights with a Focus on Resistive Memories 数据存储和大脑启发计算的新兴记忆技术:印度研究见解的全球视角，重点是电阻性记忆

IF 0.9 4区综合性期刊

Proceedings of the National Academy of Sciences, India Section A: Physical Sciences Pub Date : 2023-06-04 DOI: 10.1007/s40010-023-00828-w

Sandip Lashkare, Wasi Uddin, Kumar Priyadarshi, Udayan Ganguly

{"title":"Emerging Memory Technologies for Data Storage and Brain-Inspired Computation: A Global View with Indian Research Insights with a Focus on Resistive Memories","authors":"Sandip Lashkare, Wasi Uddin, Kumar Priyadarshi, Udayan Ganguly","doi":"10.1007/s40010-023-00828-w","DOIUrl":"10.1007/s40010-023-00828-w","url":null,"abstract":"<div><p>This article is an overview of emerging memory materials and their role in advanced brain-inspired computing technologies. It starts with the progress of memory technologies over the last 50 years along with emergence and dominance of NAND flash in the memory market. Though flash is currently leading the memory market due to its high volume manufacturing and low cost, it has a latency gap with dynamic random access memory. To address this, various nonvolatile memories have been explored across the world potentially to replace flash. Here, an overview of various major emerging nonvolatile memory (NVM) technologies is presented. Along with the global view of NVMs as their current status as a storage solution, the research of NVMs in India is discussed briefly with a focus on resistance random access memory and phase change memory. Further, the need of brain-inspired advanced computing technologies like neuromorphic computing, in-memory computing are discussed along with the utility of the NVMs for such brain-inspired computing technologies. Finally, various NVMs are presented for their unique characteristic to mimic synapse, neuron functionalities as required for neuromorphic computing and for in-memory computing solutions.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":"93 3","pages":"459 - 476"},"PeriodicalIF":0.9,"publicationDate":"2023-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4508267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Kagome Magnets: The Emerging Materials for Spintronic Memories Kagome磁体:用于自旋电子记忆的新兴材料

IF 0.9 4区综合性期刊

Proceedings of the National Academy of Sciences, India Section A: Physical Sciences Pub Date : 2023-05-21 DOI: 10.1007/s40010-023-00823-1

Niru Chowdhury, Kacho Imtiyaz Ali Khan, Himanshu Bangar, Pankhuri Gupta, Ram Singh Yadav, Rekha Agarwal, Akash Kumar, Pranaba Kishor Muduli

{"title":"Kagome Magnets: The Emerging Materials for Spintronic Memories","authors":"Niru Chowdhury, Kacho Imtiyaz Ali Khan, Himanshu Bangar, Pankhuri Gupta, Ram Singh Yadav, Rekha Agarwal, Akash Kumar, Pranaba Kishor Muduli","doi":"10.1007/s40010-023-00823-1","DOIUrl":"10.1007/s40010-023-00823-1","url":null,"abstract":"<div><p>Recent developments in the field of topological quantum materials have stimulated the search for materials that could serve as the building blocks for next-generation memory applications. Due to their intriguing topological properties, such as flat bands, Dirac nodes, and Weyl points, <i>kagome magnets</i> are anticipated to be the leading materials for this application. In this mini review, we discuss some of the recent advancements in binary kagome magnets, both ferromagnetic and anti-ferromagnetic, for use as emerging memory devices. First, we discuss ferromagnetic kagome magnets, specifically Fe<span>(_3)</span>Sn<span>(_2)</span>, and then we discuss non-collinear antiferromagnetic kagome magnets, Mn<span>(_3)</span>Sn and Mn<span>(_3)</span>Ir. Finally, we discuss collinear antiferromagnetic kagome magnet, FeSn. In each of the aforementioned sections, we begin with a discussion of their topological, structural, and magnetic properties, followed by application-specific studies such as spin-orbit torques (SOT). In the final section, we discuss the current state of kagome magnets for efficient, faster, denser, and reliable memory technologies with focus on the SOT switching and observation/manipulation of skyrmions.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":"93 3","pages":"477 - 495"},"PeriodicalIF":0.9,"publicationDate":"2023-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4839040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Extraction of Lignosulfonate from Jute Sticks and its Application in Lead–Acid Battery 黄麻中木质素磺酸盐的提取及其在铅酸蓄电池中的应用

IF 0.9 4区综合性期刊

Proceedings of the National Academy of Sciences, India Section A: Physical Sciences Pub Date : 2023-05-17 DOI: 10.1007/s40010-023-00827-x

Sandip Bose, Syamal Kanti Chakrabarti, Uma Sankar Sarma

{"title":"Extraction of Lignosulfonate from Jute Sticks and its Application in Lead–Acid Battery","authors":"Sandip Bose, Syamal Kanti Chakrabarti, Uma Sankar Sarma","doi":"10.1007/s40010-023-00827-x","DOIUrl":"10.1007/s40010-023-00827-x","url":null,"abstract":"<div><p>Lignosulfonate was extracted from jute sticks by acid sulfite pulping and purified by two alternative chemical processes. The lignosulfonate from jute was compared with commercially available products by infrared spectroscopy and X-ray diffraction techniques. The jute sourced lignosulfonates showed crystalline peaks and higher solubility in water. The characteristic FTIR peaks of lignosulfonate were observed. The jute sourced lignosulfonate was used to construct the negative active mass (NAM) of lead–acid battery (LAB). The constructed LAB was subjected to standard charging and discharging cycles at 20 h, 10 h and 5 h. The normalized capacity of the constructed cells at different discharge rate was used to compare the performance of lignosulfonates from jute with a commercial sample. It showed better performance at lower discharge rates of 20 h and 10 h, while under faster discharge cycles of 5 h, the performance of the NAM plates containing jute sourced lignosulfonate showed slightly lower specific charge capacity in comparison with standard commercial product. The performance studies indicated that jute sticks could serve as a competitive source of sodium lignosulfonate for application in LAB involving lower rate discharge cycles as in solar power battery. As an alternative to conventionally used wood for commercial manufacture of lignosulfonates, lignosulfonate extracted from an inexpensive, annually renewable agro-waste, jute stick, could open new manufacturing stations and contribute to conservation of the environment.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":"93 4","pages":"729 - 735"},"PeriodicalIF":0.9,"publicationDate":"2023-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76835481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

NavIC Positioning from the Secondary Service Region and Beyond: A Study Using Compact NavIC Modules 二级服务区及以外的导航定位:基于紧凑型导航模块的研究

IF 0.9 4区综合性期刊

Proceedings of the National Academy of Sciences, India Section A: Physical Sciences Pub Date : 2023-05-17 DOI: 10.1007/s40010-023-00825-z

Atanu Santra, Somnath Mahato, Surajit Kundu, Anindya Bose

{"title":"NavIC Positioning from the Secondary Service Region and Beyond: A Study Using Compact NavIC Modules","authors":"Atanu Santra, Somnath Mahato, Surajit Kundu, Anindya Bose","doi":"10.1007/s40010-023-00825-z","DOIUrl":"10.1007/s40010-023-00825-z","url":null,"abstract":"<div><p>NavIC is a regional navigation system developed by India; NavIC signal is available in the central/primary service area covering the Indian landmass and 1500 km around India, and for the areas falling in the extended/secondary service region laying between latitude 30° S to 50° N and longitude 30° E to 130° E. Advantages and quality of NavIC-based position solution has been reported for the secondary service area based on simulated data. In this manuscript, real-time NMEA data are collected from NSSTC, Al Ain, UAE, NIMT, Pathum Thani, Thailand, falling within the extended/secondary service region and from TUMSAT, Tokyo, Japan, situated just outside the extended service region using compact, low-cost NavIC modules. Spread of the of position solution in 2-dimension, and its correspondence with rank defect satellite geometry is presented. The precision of solution and North-East-Up error plots are also estimated for those locations. Real-time data from the locations points towards the advantage of having NavIC satellites placed in GEO or IGSO from high elevation angles have been discussed towards seamless navigation operation in GNSS + NavIC hybrid operation within the constrained or degraded GNSS satellite visibility situations.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":"93 4","pages":"565 - 572"},"PeriodicalIF":0.9,"publicationDate":"2023-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72601900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0