2D Materials最新文献

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New twisted van der Waals fabrication method based on strongly adhesive polymer 基于强粘性聚合物的新型扭曲范德华制造方法
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-02-13 DOI: 10.1088/2053-1583/ad2524
Giung Park, Suhan Son, Jongchan Kim, Yunyeong Chang, Kaixuan Zhang, Miyoung Kim, Jieun Lee, Je-Geun Park
{"title":"New twisted van der Waals fabrication method based on strongly adhesive polymer","authors":"Giung Park, Suhan Son, Jongchan Kim, Yunyeong Chang, Kaixuan Zhang, Miyoung Kim, Jieun Lee, Je-Geun Park","doi":"10.1088/2053-1583/ad2524","DOIUrl":"https://doi.org/10.1088/2053-1583/ad2524","url":null,"abstract":"Observations of emergent quantum phases in twisted bilayer graphene prompted a flurry of activities in van der Waals (vdW) materials beyond graphene. Most current twisted experiments use a so-called tear-and-stack method using a polymer called polypropylene carbonate (PPC). However, despite the clear advantage of the current PPC tear-and-stack method, there are also technical limitations, mainly a limited number of vdW materials that can be studied using this PPC-based method. This technical bottleneck has been preventing further development of the exciting field beyond a few available vdW samples. To overcome this challenge and facilitate future expansion, we developed a new tear-and-stack method using a strongly adhesive polycaprolactone. With similar angular accuracy, our technology allows fabrication without a capping layer, facilitating surface analysis and ensuring inherently clean interfaces and low operating temperatures. More importantly, it can be applied to many other vdW materials that have remained inaccessible with the PPC-based method. We present our results on twist homostructures made with a wide choice of vdW materials—from two well-studied vdW materials (graphene and MoS<sub>2</sub>) to the first-ever demonstrations of other vdW materials (NbSe<sub>2</sub>, NiPS<sub>3</sub>, and Fe<sub>3</sub>GeTe<sub>2</sub>). Therefore, our new technique will help expand moiré physics beyond few selected vdW materials and open up more exciting developments.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"36 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140010445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
X-ray photoelectron diffraction as a modern tool for determining surface stacking sequence in layered materials X 射线光电子衍射是确定层状材料表面堆积序列的现代工具
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-02-12 DOI: 10.1088/2053-1583/ad2526
L H de Lima, A de Siervo
{"title":"X-ray photoelectron diffraction as a modern tool for determining surface stacking sequence in layered materials","authors":"L H de Lima, A de Siervo","doi":"10.1088/2053-1583/ad2526","DOIUrl":"https://doi.org/10.1088/2053-1583/ad2526","url":null,"abstract":"We investigated the surface structure of a NbSe<sub>2</sub> single crystal at room temperature, using angle-scanned x-ray photoelectron diffraction (XPD) combined with multiple scattering calculations. Different stacking sequences were tested (1T, 2H<sub>\u0000<italic toggle=\"yes\">a</italic>\u0000</sub>, 2H<sub>\u0000<italic toggle=\"yes\">c</italic>\u0000</sub>, and 3R), including possible stacking faults and a mixed 2H–3R stacking proposed earlier in the literature. We confirm the capability of XPD to distinguish different proposed structural models and, unambiguously, determine the true surface structure. Also, our findings provide reliable in-plane and interlayer distances. We observed expansions of the perpendicular distances between atomic planes within the monolayer and between monolayers of 3%–5%. These results are important as accurate experimental input for the development of theoretical methods that involve a quantitative description of van der Waals systems.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"16 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139757274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Unraveling the mechanism of vanadium self-intercalation in 1T-VSe2: atomic-scale evidence for phase transition and superstructure model for intercalation compound 揭示 1T-VSe2 中钒的自互渗机制:相变的原子尺度证据和互渗化合物的超结构模型
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-02-01 DOI: 10.1088/2053-1583/ad2193
Daliang He, Bo Wang, Wang Cao, Yongjun Jiang, Sheng Dai, Wei Zhao, Xiaodong Cui, Chuanhong Jin
{"title":"Unraveling the mechanism of vanadium self-intercalation in 1T-VSe2: atomic-scale evidence for phase transition and superstructure model for intercalation compound","authors":"Daliang He, Bo Wang, Wang Cao, Yongjun Jiang, Sheng Dai, Wei Zhao, Xiaodong Cui, Chuanhong Jin","doi":"10.1088/2053-1583/ad2193","DOIUrl":"https://doi.org/10.1088/2053-1583/ad2193","url":null,"abstract":"Self-intercalation is an efficient strategy for tailoring the property of layer structured materials like transition metal dichalcogenides (TMDCs), while the associated kinetics and mechanism remain scarcely explored. In this study, we investigate the atomic-scale dynamics and mechanism of vanadium (V) self-intercalation in multi-layer 1T-VSe<sub>2</sub> using <italic toggle=\"yes\">in situ</italic> high resolution scanning transmission electron microscopy. The results reveal that the self-intercalation of V induces structural transformation of pristine VSe<sub>2</sub> into three V-enrich intercalated compounds, i.e. V<sub>5</sub>Se<sub>8</sub>, V<sub>3</sub>Se<sub>4</sub> and VSe. The self-intercalated V follows an ordered arrangement of <inline-formula>\u0000<tex-math><?CDATA $2 times 2$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mn>2</mml:mn></mml:math>\u0000<inline-graphic xlink:href=\"tdmad2193ieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>, <inline-formula>\u0000<tex-math><?CDATA $2 times 1$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn></mml:math>\u0000<inline-graphic xlink:href=\"tdmad2193ieqn2.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>, and <inline-formula>\u0000<tex-math><?CDATA $1 times 1$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mn>1</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn></mml:math>\u0000<inline-graphic xlink:href=\"tdmad2193ieqn3.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> within the interlayer octahedral sites, corresponding to an intercalation concentration of 25%, 50% and 100% in V<sub>5</sub>Se<sub>8</sub>, V<sub>3</sub>Se<sub>4</sub> and VSe, respectively. The V intercalants induced lattice distortions to the host 1T-VSe<sub>2</sub> such as the dimerization of neighboring lattice V is observed experimentally, which are further supported by density functional theory (DFT) calculations. Finally, a superstructure model generalizing the possible structures of self-intercalated compounds in layered TMDCs is proposed and then validated by the DFT determined formation energy landscape. This study provides comprehensive insights on the kinetics and mechanism of the self-intercalation in layered TMDC materials, contributing to the precise control for the structure and stoichiometry of self-intercalated TMDC compounds.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"19 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139757437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Graphene Roadmap Briefs (No. 3): meta-market analysis 2023 石墨烯路线图简报(第 3 期):2023 年元市场分析
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-01-31 DOI: 10.1088/2053-1583/ad1e78
Thomas Schmaltz, Lorenzo Wormer, Ulrich Schmoch, Henning Döscher
{"title":"Graphene Roadmap Briefs (No. 3): meta-market analysis 2023","authors":"Thomas Schmaltz, Lorenzo Wormer, Ulrich Schmoch, Henning Döscher","doi":"10.1088/2053-1583/ad1e78","DOIUrl":"https://doi.org/10.1088/2053-1583/ad1e78","url":null,"abstract":"Graphene and related materials (GRMs) promise ample application potential throughout numerous industries. A dedicated graphene market gradually forms around emerging suppliers aspiring to satisfy future demands. Its growth critically depends on the interplay of supply stream maturation and initial utilizations to drive the demand. The present issue of Graphene Roadmap Briefs provides quantitative insights into the current state and future development of the emerging graphene market. We aggregate the underlying expectations and projections from commercial market reports and critically discuss the results. Established science and technology metrics complement our analyses and provide deeper insights into the global market landscape and key actors. In particular, we resolve composites, batteries, and electronics as major application areas likely to drive the overall development of the graphene market towards mass production.<bold>About: Graphene Roadmap Briefs</bold>Graphene Roadmap Briefs highlight key innovation areas impacted by graphene and related materials (GRMs) as well as overarching aspects of GRM innovation status and prospects. The series bases on the evolving technology and innovation roadmap process initiated by the European Graphene Flagship. It covers crucial innovation trends beyond fundamental scientific discovery and applied research on GRM utilization opportunities.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"9 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139757180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The deep-acceptor nature of the chalcogen vacancies in 2D transition-metal dichalcogenides 二维过渡金属二粲化物中的粲空位的深度接受性质
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-01-30 DOI: 10.1088/2053-1583/ad2108
Shoaib Khalid, Bharat Medasani, John L Lyons, Darshana Wickramaratne, Anderson Janotti
{"title":"The deep-acceptor nature of the chalcogen vacancies in 2D transition-metal dichalcogenides","authors":"Shoaib Khalid, Bharat Medasani, John L Lyons, Darshana Wickramaratne, Anderson Janotti","doi":"10.1088/2053-1583/ad2108","DOIUrl":"https://doi.org/10.1088/2053-1583/ad2108","url":null,"abstract":"Chalcogen vacancies in the semiconducting monolayer transition-metal dichalcogenides (TMDs) have frequently been invoked to explain a wide range of phenomena, including both unintentional p-type and n-type conductivity, as well as sub-band gap defect levels measured via tunneling or optical spectroscopy. These conflicting interpretations of the deep versus shallow nature of the chalcogen vacancies are due in part to shortcomings in prior first-principles calculations of defects in the semiconducting two-dimensional TMDs that have been used to explain experimental observations. Here we report results of hybrid density functional calculations for the chalcogen vacancy in a series of monolayer TMDs, correctly referencing the thermodynamic charge transition levels to the fundamental band gap (as opposed to the optical band gap). We find that the chalcogen vacancies are deep acceptors and cannot lead to n-type or p-type conductivity. Both the (0/−1) and (−1/−2) transition levels occur in the gap, leading to paramagnetic charge states <inline-formula>\u0000<tex-math><?CDATA $S = 1/2$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mi>S</mml:mi><mml:mo>=</mml:mo><mml:mn>1</mml:mn><mml:mrow><mml:mo>/</mml:mo></mml:mrow><mml:mn>2</mml:mn></mml:math>\u0000<inline-graphic xlink:href=\"tdmad2108ieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> and <italic toggle=\"yes\">S</italic> = 1, respectively, in a collinear-spin representation. We discuss trends in terms of the band alignments between the TMDs, which can serve as a guide to future experimental studies of vacancy behavior.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"21 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139757095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Scanning tunneling microscopy study of epitaxial Fe3GeTe2 monolayers on Bi2Te3 Bi2Te3 上外延 Fe3GeTe2 单层的扫描隧道显微镜研究
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-01-25 DOI: 10.1088/2053-1583/ad1c6d
Brad M Goff, Wenyi Zhou, Alexander J Bishop, Ryan Bailey-Crandell, Katherine Robinson, Roland K Kawakami, Jay A Gupta
{"title":"Scanning tunneling microscopy study of epitaxial Fe3GeTe2 monolayers on Bi2Te3","authors":"Brad M Goff, Wenyi Zhou, Alexander J Bishop, Ryan Bailey-Crandell, Katherine Robinson, Roland K Kawakami, Jay A Gupta","doi":"10.1088/2053-1583/ad1c6d","DOIUrl":"https://doi.org/10.1088/2053-1583/ad1c6d","url":null,"abstract":"Introducing magnetism to the surface state of topological insulators, such as Bi<sub>2</sub>Te<sub>3</sub>, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe<sub>3</sub>GeTe<sub>2</sub> (FGT) that is grown on Bi<sub>2</sub>Te<sub>3</sub> via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi<sub>2</sub>Te<sub>3</sub> and outwards from Bi<sub>2</sub>Te<sub>3</sub> steps. Atomic resolution imaging shows triangular lattices of 390 ± 10 pm for FGT and 430 ± 10 pm for Bi<sub>2</sub>Te<sub>3</sub>, consistent with the respective bulk crystals. A moiré pattern is observed on FGT regions with a periodicity of 4.3 ± 0.4 nm that can be attributed solely to this lattice mismatch and thus indicates zero rotational misalignment. While most of the surface is covered by a single QL of the FGT, there are small double QL regions, as well as regions with distinct chemical terminations due to an incomplete QL. The most common partial QL surface termination is the FeGe layer, in which the top two atomic layers are missing. This termination has a distinctive electronic structure and a <inline-formula>\u0000<tex-math><?CDATA $left( {sqrt 3 {text{ }}x{text{ }}sqrt 3 } right)R{30^circ }$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mfenced close=\")\" open=\"(\"><mml:mrow><mml:msqrt><mml:mn>3</mml:mn></mml:msqrt><mml:mrow><mml:mtext> </mml:mtext></mml:mrow><mml:mi>x</mml:mi><mml:mrow><mml:mtext> </mml:mtext></mml:mrow><mml:msqrt><mml:mn>3</mml:mn></mml:msqrt></mml:mrow></mml:mfenced><mml:mi>R</mml:mi><mml:mrow><mml:msup><mml:mn>30</mml:mn><mml:mo>∘</mml:mo></mml:msup></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"tdmad1c6dieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> reconstruction overlaid on the moiré pattern in STM images. Magnetic circular dichroism measurements confirm these thin FGT films are ferromagnetic with <italic toggle=\"yes\">T</italic>\u0000<sub>C</sub> ∼190 K.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"68 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139757179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Raman spectroscopy of monolayer to bulk PtSe2 exfoliated crystals 单层到块状 PtSe2 剥离晶体的拉曼光谱分析
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-01-24 DOI: 10.1088/2053-1583/ad1e79
Marin Tharrault, Eva Desgué, Dominique Carisetti, Bernard Plaçais, Christophe Voisin, Pierre Legagneux, Emmanuel Baudin
{"title":"Raman spectroscopy of monolayer to bulk PtSe2 exfoliated crystals","authors":"Marin Tharrault, Eva Desgué, Dominique Carisetti, Bernard Plaçais, Christophe Voisin, Pierre Legagneux, Emmanuel Baudin","doi":"10.1088/2053-1583/ad1e79","DOIUrl":"https://doi.org/10.1088/2053-1583/ad1e79","url":null,"abstract":"Raman spectroscopy is widely used to assess the quality of 2D materials thin films. This report focuses on <inline-formula>\u0000<tex-math><?CDATA $mathrm{PtSe_2}$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:mi mathvariant=\"normal\">P</mml:mi><mml:mi mathvariant=\"normal\">t</mml:mi><mml:mi mathvariant=\"normal\">S</mml:mi><mml:msub><mml:mi mathvariant=\"normal\">e</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"tdmad1e79ieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>, a noble transition metal dichalcogenide which has the remarkable property to transit from a semi-conductor to a semi-metal with increasing layer number. While polycrystalline <inline-formula>\u0000<tex-math><?CDATA $mathrm{PtSe_2}$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:mi mathvariant=\"normal\">P</mml:mi><mml:mi mathvariant=\"normal\">t</mml:mi><mml:mi mathvariant=\"normal\">S</mml:mi><mml:msub><mml:mi mathvariant=\"normal\">e</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"tdmad1e79ieqn2.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> can be grown with various crystalline qualities, getting insight into the monocrystalline intrinsic properties remains challenging. We report on the study of exfoliated 1–10 layers <inline-formula>\u0000<tex-math><?CDATA $mathrm{PtSe_2}$?></tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mrow><mml:mi mathvariant=\"normal\">P</mml:mi><mml:mi mathvariant=\"normal\">t</mml:mi><mml:mi mathvariant=\"normal\">S</mml:mi><mml:msub><mml:mi mathvariant=\"normal\">e</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>\u0000<inline-graphic xlink:href=\"tdmad1e79ieqn3.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> by Raman spectroscopy, featuring record linewidth. The clear Raman signatures allow layer-thickness identification and provides a reference metrics to assess crystal quality of grown films.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"79 1","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139757186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tuning the atomic and electronic structures of mirror twin boundaries in molecular beam epitaxy grown MoSe2 monolayers via rhenium doping 通过掺铼调整分子束外延生长的 MoSe2 单层中镜像孪晶边界的原子和电子结构
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-01-10 DOI: 10.1088/2053-1583/ad1d0c
Zhoubin Yu, Yipu Xia, H. Komsa, Junqiu Zhang, Maohai Xie, Chuanhong Jin
{"title":"Tuning the atomic and electronic structures of mirror twin boundaries in molecular beam epitaxy grown MoSe2 monolayers via rhenium doping","authors":"Zhoubin Yu, Yipu Xia, H. Komsa, Junqiu Zhang, Maohai Xie, Chuanhong Jin","doi":"10.1088/2053-1583/ad1d0c","DOIUrl":"https://doi.org/10.1088/2053-1583/ad1d0c","url":null,"abstract":"\u0000 Interplay between defects like mirror twin boundaries (MTBs) and dopants may provide additional opportunities for furthering the research on two-dimensional monolayer (ML) transition metal dichalcogenides (TMDs). In this work, we successfully dope rhenium (Re) into molecular beam epitaxy grown ML MoSe2 and confirm the formation of a new type of MTBs, named 4|4E-M (M represents metal, Mo/Re) according to the configuration. Data from statistic atomic resolution scanning transmission electron microscopy (STEM) also reveals a preferable MTB enrichment of Re dopants, rather than intra-domain. In conjunction with density functional theory calculation results, we propose the possible routes for Re doping induced formation of 4|4E-M MTBs. Electronic structures of Re doped MTBs in ML MoSe2 are also predicted theoretically and then preliminarily tested by scanning tunnelling microscopy and spectroscopy.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"81 13","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139440462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Five near-infrared-emissive graphene quantum dots for multiplex bioimaging. 用于多重生物成像的五个近红外发射石墨烯量子点。
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-01-09 DOI: 10.1088/2053-1583/ad1c6e
Alina Valimukhametova, Olivia Fannon, Ugur C. Topkiran, Abby Dorsky, Olivia Sottile, Roberto Gonzalez Rodriguez, J. Coffer, Anton V. Naumov
{"title":"Five near-infrared-emissive graphene quantum dots for multiplex bioimaging.","authors":"Alina Valimukhametova, Olivia Fannon, Ugur C. Topkiran, Abby Dorsky, Olivia Sottile, Roberto Gonzalez Rodriguez, J. Coffer, Anton V. Naumov","doi":"10.1088/2053-1583/ad1c6e","DOIUrl":"https://doi.org/10.1088/2053-1583/ad1c6e","url":null,"abstract":"\u0000 Due to high tissue penetration depth and low autofluorescence backgrounds, near-infrared (NIR) fluorescence imaging has recently become an advantageous diagnostic technique used in a variety of fields. However, most of the NIR fluorophores do not have therapeutic delivery capabilities, exhibit low photostabilities, and raise toxicity concerns. To address these issues, we developed and tested five types of biocompatible graphene quantum dots (GQDs) exhibiting spectrally-separated fluorescence in the NIR range of 928 – 1053 nm with NIR excitation. Their optical properties in the NIR are attributed to either rare-earth metal dopants (Ho-NGQDs, Yb-NGQDs, Nd-NGQDs) or defect-states (NGQDs, RGQDs) as verified by Hartree-Fock calculations. Moderate up to 1.34 % quantum yields of these GQDs are well-compensated by their remarkable >4-hour photostability. At the biocompatible concentrations of up to 0.5 – 2 mg/mL GQDs successfully internalize into HEK-293 cells and enable in vitro imaging in the visible and NIR. Tested all together in HEK-293 cells five GQD types enable simultaneous multiplex imaging in the NIR-I and NIR-II shown for the first time in this work for GQD platforms. Substantial photostability, spectrally-separated NIR emission, and high biocompatibility of five GQD types developed here suggest their promising potential in multianalyte testing and multiwavelength bioimaging of combination therapies.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":"29 3","pages":""},"PeriodicalIF":5.5,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139441648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent progress on degradation mechanism and antioxidation of low-dimensional black phosphorus 低维黑磷降解机理与抗氧化研究的最新进展
IF 5.5 3区 材料科学
2D Materials Pub Date : 2024-01-04 DOI: 10.1088/2053-1583/ad1ae7
Mingfu Fu, Jiabao Li, Wen Yang, Yong Zhang, Peizhi Yang
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