Unraveling the mechanism of vanadium self-intercalation in 1T-VSe2: atomic-scale evidence for phase transition and superstructure model for intercalation compound

IF 4.5 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Daliang He, Bo Wang, Wang Cao, Yongjun Jiang, Sheng Dai, Wei Zhao, Xiaodong Cui, Chuanhong Jin
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Abstract

Self-intercalation is an efficient strategy for tailoring the property of layer structured materials like transition metal dichalcogenides (TMDCs), while the associated kinetics and mechanism remain scarcely explored. In this study, we investigate the atomic-scale dynamics and mechanism of vanadium (V) self-intercalation in multi-layer 1T-VSe2 using in situ high resolution scanning transmission electron microscopy. The results reveal that the self-intercalation of V induces structural transformation of pristine VSe2 into three V-enrich intercalated compounds, i.e. V5Se8, V3Se4 and VSe. The self-intercalated V follows an ordered arrangement of 2×2 , 2×1 , and 1×1 within the interlayer octahedral sites, corresponding to an intercalation concentration of 25%, 50% and 100% in V5Se8, V3Se4 and VSe, respectively. The V intercalants induced lattice distortions to the host 1T-VSe2 such as the dimerization of neighboring lattice V is observed experimentally, which are further supported by density functional theory (DFT) calculations. Finally, a superstructure model generalizing the possible structures of self-intercalated compounds in layered TMDCs is proposed and then validated by the DFT determined formation energy landscape. This study provides comprehensive insights on the kinetics and mechanism of the self-intercalation in layered TMDC materials, contributing to the precise control for the structure and stoichiometry of self-intercalated TMDC compounds.
揭示 1T-VSe2 中钒的自互渗机制:相变的原子尺度证据和互渗化合物的超结构模型
自掺杂是调整过渡金属二钙化物(TMDCs)等层状结构材料特性的一种有效策略,但相关的动力学和机理却鲜有研究。在本研究中,我们利用原位高分辨率扫描透射电子显微镜研究了多层 1T-VSe2 中钒(V)自掺杂的原子尺度动力学和机理。结果表明,钒的自掺杂诱导原始 VSe2 结构转变为三种富钒掺杂化合物,即 V5Se8、V3Se4 和 VSe。自插层的 V 在层间八面体位点内呈 2×2、2×1 和 1×1 的有序排列,在 V5Se8、V3Se4 和 VSe 中的插层浓度分别为 25%、50% 和 100%。实验观察到 V 插层诱导宿主 1T-VSe2 晶格畸变,如相邻晶格 V 的二聚化,密度泛函理论(DFT)计算进一步证实了这一点。最后,我们提出了一个上层结构模型,概括了层状 TMDC 中自掺杂化合物的可能结构,并通过 DFT 确定的形成能谱进行了验证。这项研究全面揭示了层状 TMDC 材料中自掺杂的动力学和机理,有助于精确控制自掺杂 TMDC 化合物的结构和化学计量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
2D Materials
2D Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
10.70
自引率
5.50%
发文量
138
审稿时长
1.5 months
期刊介绍: 2D Materials is a multidisciplinary, electronic-only journal devoted to publishing fundamental and applied research of the highest quality and impact covering all aspects of graphene and related two-dimensional materials.
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