2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC)最新文献_第7页

Observation of the Domain Morphology of Pb(Mg1/3Nb2/3)O3-xPbTiO3 Single Crystals Pb(Mg1/3Nb2/3)O3-xPbTiO3单晶畴形貌观察

2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2021-12-12 DOI: 10.1109/NMDC50713.2021.9677513

Haotian Wan, Y. Yamashita, Xiaoning Jiang

{"title":"Observation of the Domain Morphology of Pb(Mg1/3Nb2/3)O3-xPbTiO3 Single Crystals","authors":"Haotian Wan, Y. Yamashita, Xiaoning Jiang","doi":"10.1109/NMDC50713.2021.9677513","DOIUrl":"https://doi.org/10.1109/NMDC50713.2021.9677513","url":null,"abstract":"Relaxor-PbTiO3 Single crystals including Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) have been widely used and extensively studied in the last two decades due to their ultrahigh piezoelectric properties for acoustic devices. However, the piezoelectric properties of PMN-xPT single crystals are highly dependent on the PT contents. In this work, the domain morphologies of PMN-xPT with different PT compositions (x = 0.26 and 0.28, rhombohedral phase) after direct current poling (DCP) were observed by piezoresponse force microscopy (PFM). The domain morphologies and the domain wall densities were compared to study the influences of the PT compositions on the piezoelectric properties of PMN-xPT. The PFM images showed that after DCP, PMN-xPT single crystals of two different compositions all had the domain morphologies with ‘4R’ configuration in which both 109° and 71° domain walls could be clearly identified. Compared with PMN-0.26PT, PMN-0.28PT single crystals had similar 109° domain wall densities (Domain width: 1012 nm vs 1025 nm) but higher 71° domain wall densities (Domain width: 426 nm vs 645 nm). The higher piezoelectric properties of PMN-xPT single crystals were found to correlate with the higher 71° domain wall densities.","PeriodicalId":6742,"journal":{"name":"2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC)","volume":"59 1 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2021-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88442865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization of Electrophoretically Deposited Zinc Oxide Nanoparticles on Silicon with Fabrication of a P-N Junction 用P-N结制备硅表面电泳沉积氧化锌纳米颗粒的表征

2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2021-12-12 DOI: 10.1109/nmdc50713.2021.9677485

F. Hazzazi, A. Young, C. O’Loughlin, O. Kizilkaya, T. Daniels‐Race

引用次数: 0

A Theoretical Study on Porous-Silicon Based Synapse Design for Neural Hardware 基于多孔硅的神经硬件突触设计理论研究

2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2021-12-12 DOI: 10.1109/NMDC50713.2021.9677557

Orthi Sikder, Peter Schubert

{"title":"A Theoretical Study on Porous-Silicon Based Synapse Design for Neural Hardware","authors":"Orthi Sikder, Peter Schubert","doi":"10.1109/NMDC50713.2021.9677557","DOIUrl":"https://doi.org/10.1109/NMDC50713.2021.9677557","url":null,"abstract":"Porous silicon (po-Si) is a form of silicon (Si) with nanopores of tunable sizes and shapes distributed over the bulk structure. Although crystalline Si (c-Si) is already established as one of the most advantageous and promising elements for its technological significance, the additional key aspect of po-Si is its large surface area with respect to its small volume which is beneficial for surface chemistry. In this work, we explore the design of a po-Si based synaptic device and investigate its potential for neuromorphic hardware. First, we analyze several electrical properties of po-Si through density functional theory (Ab Initio/ first principle) calculation. We show that the presence of intra-pore dangling states appears within the bandgap region of po-Si. While the bandgap of the po-Si is well known to be higher than c-Si yielding low carrier density and higher resistance, the appearance of these dangling states can significantly participate in electronic transport through hopping mechanism. Then, we analyze the electric-field driven modulation in the dangling bond through controlled intra-pore Si-H bond dissociation. Such modulation of the dangling state density further allows the tenability of the po-Si conductance. Finally, we theoretically evaluate the current-voltage characteristics of our proposed po-Si based synaptic devices and determine the possible range of obtainable conductivity for different porosity. Our analysis signifies that the integration of such devices in the synaptic fabric can enable significantly denser and energy-efficient neuromorphic hardware.","PeriodicalId":6742,"journal":{"name":"2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC)","volume":"67 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2021-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84051782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrasound and Magnetic Dual-Mode Stacked Transducer for High-Frequency Magneto-Sonothrombolysis 用于高频磁超声溶栓的超声和磁双模堆叠换能器

2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2021-12-12 DOI: 10.1109/NMDC50713.2021.9677479

Bohua Zhang, Huaiyu Wu, Xiaoning Jiang

引用次数: 1

Thickness-Dependent Seebeck Coefficient in Hybrid 2-Dimensional layers 杂化二维层中厚度相关的塞贝克系数

2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2021-12-12 DOI: 10.1109/NMDC50713.2021.9677528

T. Ghomian, N. Darwish, J. Hihath

{"title":"Thickness-Dependent Seebeck Coefficient in Hybrid 2-Dimensional layers","authors":"T. Ghomian, N. Darwish, J. Hihath","doi":"10.1109/NMDC50713.2021.9677528","DOIUrl":"https://doi.org/10.1109/NMDC50713.2021.9677528","url":null,"abstract":"The Seebeck coefficient in a single molecule is determined by the slope of the transport probability of the charge carrier at the Fermi level, which can result in high Seebeck coefficients. However, since single molecules can only generate a limited amount of power for thermoelectric applications. Hence, larger scale systems must be developed to provide enough power for real applications. In this work, we examine the effect of the dimensionality on the Seebeck coefficient of molecule/Au nanoparticle 2D arrays with a massive number of molecular junctions within the network system. This approach increases the complexity and interactions between the components as the system size scales. In this work, we observed that the multilayer structure of 2D hybrid arrays provides higher Seebeck coefficients than monolayer structures with same molecular linkers. In particular, Oleylamine (OAM) and thiolated anthraquinone derivatives (5AQ5) are used as molecular interlinkers between gold nanoparticles in the structure. Experimental results illustrate that a four-layer structure of OAM/Au 2D array yields a ~11x improvement in the Seebeck coefficient $(mathrm{S}=38.21quad mu mathrm{V}/mathrm{K})$ over the single-layer structure $(mathrm{S}=3.36 mu mathrm{V}/mathrm{K})$, which, along with an improvement in the conductivity yields a power factor improvement of 635 times. The other set of results illustrate that a three-layer structure of anthraquinone-based norbornylogous bridge (5AQ5)/Au 2D array yields a ~26x improvement in the Seebeck coefficient $(mathrm{S}=-3254 mu mathrm{V}/mathrm{K})$ over the single-layer structure $(mathrm{S}=-127 mu mathrm{V}/mathrm{K})$, and a power factor improvement of 177 times. These findings demonstrate that it is possible to improve the thermoelectric performance of engineered nanostructures by controlling the number of layers.","PeriodicalId":6742,"journal":{"name":"2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC)","volume":"45 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2021-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90159548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Hexagonal boron nitride second harmonic generation using gold nanorods with continuous laser source 六方氮化硼纳米棒连续激光二次谐波的产生

2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2021-12-12 DOI: 10.1109/NMDC50713.2021.9677498

Mirali Seyed Shariatdoust, Michael Dobinson, G. Hajisalem, R. Gordon

引用次数: 1

A High Yield, High Purity Microfluidic Device For Potential Application of Blood Plasma Generation 一种高产、高纯度的微流体装置在血浆生成中的潜在应用

2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2021-12-12 DOI: 10.1109/NMDC50713.2021.9677554

H. Abouali, Seied Ali Hosseini, Sanjana Srikant, M. Poudineh

引用次数: 0

Modeling of Hysteresis in Perovskite-Silicon Tandem Solar Cells 钙钛矿-硅串联太阳能电池的迟滞建模

2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2021-12-12 DOI: 10.1109/NMDC50713.2021.9677521

Kumudini Ganesh, R. Padmanabhan

引用次数: 1

Conductive Green Graphene inks for Printed Electronics 用于印刷电子的导电绿色石墨烯油墨

2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2021-12-12 DOI: 10.1109/NMDC50713.2021.9677537

A. A. Al Shboul, Mohsen Ketabi, R. Izquierdo

引用次数: 0

Injection mechanism characterization in N,N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide based vertical organic field-effect transistors N,N'-二癸基-3,4,9,10-苝四羧基二亚胺基垂直有机场效应晶体管注入机理表征

2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2021-12-12 DOI: 10.1109/nmdc50713.2021.9677483

Morvan Marjorie, Buso David, Ternisien Marc, R. Cedric, El Housseiny Houssein, Zissis Georges

引用次数: 0