Observation of the Domain Morphology of Pb(Mg1/3Nb2/3)O3-xPbTiO3 Single Crystals

2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2021-12-12 DOI:10.1109/NMDC50713.2021.9677513

Haotian Wan, Y. Yamashita, Xiaoning Jiang

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Abstract

Relaxor-PbTiO3 Single crystals including Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) have been widely used and extensively studied in the last two decades due to their ultrahigh piezoelectric properties for acoustic devices. However, the piezoelectric properties of PMN-xPT single crystals are highly dependent on the PT contents. In this work, the domain morphologies of PMN-xPT with different PT compositions (x = 0.26 and 0.28, rhombohedral phase) after direct current poling (DCP) were observed by piezoresponse force microscopy (PFM). The domain morphologies and the domain wall densities were compared to study the influences of the PT compositions on the piezoelectric properties of PMN-xPT. The PFM images showed that after DCP, PMN-xPT single crystals of two different compositions all had the domain morphologies with ‘4R’ configuration in which both 109° and 71° domain walls could be clearly identified. Compared with PMN-0.26PT, PMN-0.28PT single crystals had similar 109° domain wall densities (Domain width: 1012 nm vs 1025 nm) but higher 71° domain wall densities (Domain width: 426 nm vs 645 nm). The higher piezoelectric properties of PMN-xPT single crystals were found to correlate with the higher 71° domain wall densities.

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Pb(Mg1/3Nb2/3)O3-xPbTiO3单晶畴形貌观察

弛豫- pbtio3单晶，包括Pb(ml1 / 3nb2 /3)O3-xPbTiO3 (PMN-xPT)，由于其在声学器件中的超高压电性能，在过去的二十年中得到了广泛的应用和广泛的研究。然而，PMN-xPT单晶的压电性能高度依赖于PT含量。采用压电响应力显微镜(PFM)观察了不同PT成分(x = 0.26和0.28，菱形相)的PMN-xPT在直流极化(DCP)后的畴形貌。通过对畴形貌和畴壁密度的比较，研究了PT成分对PMN-xPT压电性能的影响。PFM图像显示，DCP后，两种不同成分的PMN-xPT单晶均具有“4R”结构，其中109°和71°畴壁均可清晰识别。与PMN-0.26PT相比，PMN-0.28PT单晶具有109°畴壁密度(畴宽分别为1012 nm和1025 nm)，但71°畴壁密度更高(畴宽分别为426 nm和645 nm)。PMN-xPT单晶的高压电性能与较高的71°畴壁密度有关。

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2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC)

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